Abstract: A variable capacitance device includes a fixing member, a fixed electrode having a first end side fixed by the fixing member, an actuator element having a first end side fixed by the fixing member directly or indirectly, a movable electrode provided to connect to the actuator element directly or indirectly and disposed to approximately face the fixed electrode, and a driving section deforming a second end side of the actuator element, to change a distance between the fixed electrode and the movable electrode.

Abstract: A field effect electron emitting apparatus comprising a substrate, a plurality of wires embedded in the substrate, at least a portion of each wire being exposed from the substrate and extending generally perpendicularly therefrom and including magnetic material, wherein the average wire spacing is less than 30 ?m, the average spacing height ratio is between 1 and 3 and the average wire aspect ratio is greater than 3. Also a method of manufacturing an electron emitting apparatus, a field effect display having such a field effect electron emitting apparatus, an illumination apparatus having such a field effect electron emitting apparatus, and a backlight apparatus for a liquid crystal display having such a field effect electron emitting apparatus.

Abstract: Provided are a lens drive device capable of moving with good accuracy a lens in the direction of an optical axis thereof, and a lens module and an image pickup device provided with such a lens drive device. By a pair of polymer actuator elements 441 and 442, a lens holding member 43 is driven via coupling members 451A, 451B, 452A, and 452B. As a result, a lens 48 can be moved with good accuracy in the direction of the optical axis Z1 thereof. In addition, preferably, the coupling members 451A, 451B, 452A, and 452B have the rigidity same as or lower than that of each of the polymer actuator elements 441 and 442.

Abstract: A driving unit that may improve characteristics in a low temperature environment while implementing downsizing, and a lens module as well as an image pickup device with such a driving unit are provided. The driving unit includes one or a plurality of polymer actuator elements, and a voltage supply section supplying a driving voltage and a heating voltage to the polymer actuator element.

Abstract: A lens module includes: a lens forming an image of an object; a lens holder to hold an outer peripheral side of the lens to allow reciprocal movement in an optical axis direction of the lens; a housing at least one end side of which is opened, which includes a cylindrical receiving part having an inner surface, one surface of which, at a lateral side, contacts one surface of the lens holder at the lateral side perpendicular to the optical axis direction, and which receives the lens holder in the receiving part to allow reciprocal movement in the optical axis direction of the lens and in a sliding state; and an actuator part including a movable part which is displaced by a displacement amount corresponding to a level of an applied drive voltage and reciprocates the lens holder received in the housing between a first position and a second position in the optical axis direction.

Abstract: A memory device is provided. The memory device including memory cells having at least three stacked electrodes spaced apart pairwise by dielectric material so that the pairs of electrodes form respective capacitor layers. The capacitors are connected electrically in parallel to each other. The dielectric material is optionally ferroelectric material, in which case the capacitors are ferrocapacitors.

Abstract: A field effect electron emitting apparatus using nano-wire electron emitters is disclosed where each nano-wire electron emitter may be grown in a pore of an insulating layer and/or may have at least a portion exposed from the pore. A method of manufacturing a field effect electron emitting apparatus is also disclosed. The field effect electron emitting apparatus may be used in a display.

Abstract: A field effect electron emitting apparatus comprising an insulating layer having an array of pores is disclosed, each pore has at least one nano-wire electron emitter which is shorter than the pore, and/or each pore may have a plurality of nano-wire electron emitters. A method of manufacturing a electron emitting array is also disclosed. The field effect electron emitting apparatus may be used in a display.

Abstract: A method is proposed for producing a thin-film transistor (TFT), the method comprising forming a substrate, applying a ZnO-based precursor solution onto the substrate to form a ZnO-based channel layer, annealing the channel layer, forming a source electrode and a drain electrode on the channel layer, forming a dielectric layer on the channel layer and forming a gate electrode on the dielectric layer.

Abstract: A field effect electron emitting apparatus is prepared by depositing a plurality of nano-wires 216 onto a substrate 200 having a cathode layer 214. The deposition occurs by suspending the nano-wires 216 in a plating solution, and plating the substrate with a metal layer 202, thereby entrapping the nano-wires. The nano-wires 216 are composed of an electrically-conductive magnetic material, and the deposition process is carried out in the presence of a magnetic field perpendicular to the substrate 200 so that the nano-wires 216 are aligned by the field.

Abstract: A ferroelectric film comprising polyaminodifluoroborane (PADFB). Also a memory device utilizing the ferroelectric film, a method of fabricating a ferroelectric polymer and a ferroelectric solution.

Abstract: A ferroelectric memory device comprising a dielectric layer comprising a mixture and/or a compound that comprises a ferroelectric organic polymer and an oxidiser and/or deioniser, and a pair of electrodes configured to apply an electric field to the dielectric layer. Also a method of fabricating a memory device.

Abstract: A field effect electron emitting apparatus comprising a substrate, a plurality of wires embedded in the substrate, at least a portion of each wire being exposed from the substrate and extending generally perpendicularly therefrom and including magnetic material, wherein the average wire spacing is less than 30 ?m, the average spacing height ratio is between 1 and 3 and the average wire aspect ratio is greater than 3. Also a method of manufacturing an electron emitting apparatus, a field effect display having such a field effect electron emitting apparatus, an illumination apparatus having such a field effect electron emitting apparatus, and a backlight apparatus for a liquid crystal display having such a field effect electron emitting apparatus.

Abstract: A field effect electron emitting apparatus is prepared by depositing a plurality of nano-wires 216 onto a substrate 200 having a cathode layer 214. The deposition occurs by suspending the nano-wires 216 in a plating solution, and plating the substrate with a metal layer 202, thereby entrapping the nano-wires. The nano-wires 216 are composed of an electrically-conductive magnetic material, and the deposition process is carried out in the presence of a magnetic field perpendicular to the substrate 200 so that the nano-wires 216 are aligned by the field.

Abstract: A memory device and method for manufacturing the memory device are provided. The memory device including a first electrode, a first ferroelectric polymer layer over the first electrode, a second electrode over the first ferroelectric polymer layer, a second ferroelectric polymer layer over the second electrode, a third electrode over the second ferroelectric polymer layer, and a protective layer between the first and second ferroelectric polymer layers. The first, second and third electrodes and the first and second ferroelectric polymer layers define first and second ferroelectric capacitor structures, the second electrode being common to the first and second ferroelectric capacitor structures.

Abstract: A symbol selector comprising a storage unit which stores a symbol list including predetermined arrayed symbols; a manipulator unit for manipulating a pointing position of a virtual pointer which moves virtually over the symbol list stored in the storage unit; a sensor unit which detects acceleration per unit of time that is applied to the manipulator unit; a motion direction determination unit which determines a motion direction of the virtual pointer, based on a detection result from the sensor unit; a motion unit which moves the virtual pointer in units of symbols in the motion direction determined by the motion direction determination unit; and a selection unit which selects a symbol currently pointed to by the virtual pointer moved by the motion unit.

Abstract: A field effect electron emitting apparatus is disclosed comprising an insulating layer having an array of pores, each pore has at least one nano-wire electron emitter which is shorter than the pore and/or each pore may have a plurality of nano-wire electron emitters. A method of manufacturing a electron emitting array is also disclosed. The field effect electron emitting apparatus may be used in a display.

Abstract: A field effect electron emitting apparatus using nano-wire electron emitters is disclosed where each nano-wire electron emitter may be grown in a pore of an insulating layer and/or may have at least a portion exposed from the pore. A method of manufacturing a field effect electron emitting apparatus is also disclosed. The field effect electron emitting apparatus may be used in a display.

Abstract: A memory device is provided. The memory device including memory cells having at least three stacked electrodes spaced apart pairwise by dielectric material so that the pairs of electrodes form respective capacitor layers. The capacitors are connected electrically in parallel to each other. The dielectric material is optionally ferroelectric material, in which case the capacitors are ferrocapacitors.

Abstract: Highly coercive (out-of-plane) hard magnetic films of cobalt-platinum-phosphorus (CoPtP) composition doped with tungsten (W) were fabricated by direct current (DC) galvanostatic electrodeposition. With the addition of 0.003 mol/L of W in the electrolyte solution for CoPtP, coercivity (Hc) of about 3664-3784 Oe, absolute remanent magnetization (Mr) of 7.8-8.4 memu, and squareness (S) of about 0.53-0.55 were achieved for electroplated CoPtWP single-layered film. Upon annealing in ambient atmosphere at 320° C. for 2 hrs, an improvement in magnetic property was observed with Hc of about 4211-4619 Oe, an absolute Mr of about 7.0-8.4 memu, and a S of about 0.68-0.85. Annealing in air caused oxidation of the CoPtWP leading to a slight decrease in absolute Ms and Mr but a marked improvement in Hc and S due to the presence of non-magnetic metallic oxides formed at the grain boundaries. To achieve higher absolute magnetization, CoPtWP/Au multilayered structures were fabricated by a stepwise plating process.