Patents by Inventor Takehisa Minowa

Takehisa Minowa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200203069
    Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.
    Type: Application
    Filed: February 26, 2020
    Publication date: June 25, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroaki Nagata, Tadao Nomura, Takehisa Minowa
  • Publication number: 20200194171
    Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.
    Type: Application
    Filed: February 26, 2020
    Publication date: June 18, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroaki Nagata, Tadao Nomura, Takehisa Minowa
  • Publication number: 20200194170
    Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.
    Type: Application
    Filed: February 26, 2020
    Publication date: June 18, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroaki Nagata, Tadao Nomura, Takehisa Minowa
  • Patent number: 10612154
    Abstract: A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a Si—C solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: April 7, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Naofumi Shinya, Yu Hamaguchi, Norio Yamagata, Takehisa Minowa
  • Patent number: 10614952
    Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: April 7, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroaki Nagata, Tadao Nomura, Takehisa Minowa
  • Patent number: 10450505
    Abstract: Provided is a wavelength conversion member in which the following are dispersed in a thermoplastic resin: a LuYAG fluorescent material that is represented by (Y1-?-?Lu?Ce?)3Al5O12 (in which ? is a positive number between 0.3-0.8 inclusive and ? is a positive number between 0.01-0.05 inclusive), that emits yellow-green light as a result of excitation by blue light, and that has a diffraction peak within a range in which the diffraction angle 2? in X-ray diffraction by the K?1 line of Cu is 52.9° to 53.2° inclusive; and a KSF fluorescent material that is represented by K2(Si1-xMnx)F6 (in which x is a positive number between 0.001 and 0.3 inclusive) and that emits red light as a result of excitation by blue light. The content of the KSF fluorescent material in the wavelength conversion member is 1 to 5 times the content of the LuYAG fluorescent material by mass ratio.
    Type: Grant
    Filed: November 27, 2015
    Date of Patent: October 22, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Toshihiro Tsumori, Hajime Nakano, Toshihiko Tsukatani, Kazuhiro Wataya, Takehisa Minowa
  • Patent number: 10407752
    Abstract: A liquid-liquid extraction unit includes an extraction/separation tank (10) into which an aqueous phase in bubble form is admitted from an upper inlet (20) in one sidewall and an organic phase in bubble form is admitted from a lower inlet (30) in the one sidewall. The upward moving organic phase is contacted with the downward moving aqueous phase. After contact, the organic phase is discharged through an upper outlet (40) in an opposite sidewall and the aqueous phase is discharged through a lower outlet (50) in the opposite sidewall.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: September 10, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroto Sugahara, Takehisa Minowa
  • Patent number: 10288260
    Abstract: A turn signal for a vehicle has a blue LED as a light source, and an outer cover irradiated by the blue light. The outer cover includes a molded body of a polymeric material including phosphors dispersed therein that absorb blue light and emit light. By means of the present invention, it is possible to provide a turn signal for vehicles which has improved visibility and which imparts excellent visibility and sufficient luminous intensity over a wide angle. Further, because the entire outer cover surface-emits light, uniformity of luminous intensity is ensured without subjecting the outer cover to light scattering treatment, enabling as a result preventing glare caused by light scattering treatment, making this turn signal safe without being unpleasant for pedestrians and drivers of nearby vehicles. Furthermore, because no complex optical design is necessary, this turn signal saves space and can be arranged in a vehicle.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: May 14, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Toshihiko Tsukatani, Toshihiro Tsumori, Kazuhiro Wataya, Masami Kaneyoshi, Takehisa Minowa
  • Patent number: 10202547
    Abstract: Disclosed is an adjustment component that: includes a complex fluoride fluorophore represented by A2(M1-xMnx)F6 (in the formula: M is one or two or more of type of tetravalent element selected from Si, Ti, Zr, Hf, Ge, and Sn; A is one or two or more of type of alkali metal selected from Li, Na, K, Rb, and Cs and including at least Na and/or K; and x is from 0.001 to 0.3); and adjusts the chromaticity and/or color rendering index of illumination light by absorbing light having a wavelength of from 420 nm to 490 nm inclusive, and emitting light including a red wavelength component.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: February 12, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Toshihiro Tsumori, Takehisa Minowa, Masami Kaneyoshi, Kazuhiro Wataya
  • Patent number: 10167573
    Abstract: A method of producing a SiC single crystal includes: disposing a SiC seed crystal at a bottom part inside a graphite crucible; causing a solution containing Si, C and R (R is at least one selected from the rare earth elements inclusive of Sc and Y) or X (X is at least one selected from the group consisting of Al, Ge, Sn, and transition metals exclusive of Sc and Y) to be present in the crucible; supercooling the solution so as to cause the SiC single crystal to grow on the seed crystal; and adding powdery or granular Si and/or SiC raw material to the solution from above the graphite crucible while keeping the growth of the SiC single crystal.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: January 1, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tadao Nomura, Norio Yamagata, Takehisa Minowa
  • Patent number: 10160037
    Abstract: A rare earth magnet is prepared by disposing a R1-T-B sintered body comprising a R12T14B compound as a major phase in contact with an R2-M alloy powder and effecting heat treatment for causing R2 element to diffuse into the sintered body. The alloy powder is obtained by quenching a melt containing R2 and M. R1 and R2 are rare earth elements, T is Fe and/or Co, M is selected from B, C, P, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Ag, In, Sn, Sb, Hf, Ta, W, Pt, Au, Pb, and Bi.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: December 25, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tadao Nomura, Hiroaki Nagata, Takehisa Minowa
  • Publication number: 20180298519
    Abstract: A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a Si-C solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.
    Type: Application
    Filed: April 5, 2018
    Publication date: October 18, 2018
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Naofumi Shinya, Yu Hamaguchi, Norio Yamagata, Takehisa Minowa
  • Publication number: 20180257993
    Abstract: In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating.
    Type: Application
    Filed: July 25, 2016
    Publication date: September 13, 2018
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Naofumi SHINYA, Yu HAMAGUCHI, Norio YAMAGATA, Osamu YAMADA, Takehisa MINOWA
  • Publication number: 20180230623
    Abstract: In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating. Since the oxygen content of SiC is 100 ppm or less, generation of gas in the Si—C solution is suppressed.
    Type: Application
    Filed: July 25, 2016
    Publication date: August 16, 2018
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Naofumi SHINYA, Yu HAMAGUCHI, Norio YAMAGATA, Osamu YAMADA, Takehisa MINOWA
  • Patent number: 9988572
    Abstract: This lighting apparatus is provided with a blue LED chip having a maximum peak at a wavelength of 420-480 nm and a fluorescent material-containing resin layer disposed on the front of the blue LED chip in the light emission direction. The fluorescent material-containing resin layer is obtained by mixing and dispersing a LuAg fluorescent material, which is represented by the formula Lu3Al5O12:Ce3+ and in which the Ce activation rate is 2 mol. % or lower relative to Lu, and a double fluoride fluorescent material represented by the formula A2(B1?xMnx)F6 (in the formula, A is at least one type of element selected from among the group consisting of Li, Na, K and Cs, B is at least one type of element selected from among the group consisting of Si, Ti, Nb, Ge and Sn, and x is an integer that falls within the range 0.001?x?0.1) in a resin.
    Type: Grant
    Filed: November 28, 2014
    Date of Patent: June 5, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Kazuhiro Wataya, Toshihiro Tsumori, Toshihiko Tsukatani, Takehisa Minowa
  • Patent number: 9982189
    Abstract: A wavelength conversion member which is a resin-molded article made of at least one type of thermoplastic resin selected from polyolefins, polystyrene, styrene copolymers, fluorocarbon resins, acrylic resins, nylons, polyester resins, polycarbonate resins, vinyl chloride resins, and polyether resins. The thermoplastic resin contains less than or equal to 30 mass % of a complex fluoride fluorophore represented by A2(M1-xMnx)F6 (M is at least one type of tetravalent element selected from Si, Ti, Zr, Hf, Ge, and Sn; A is at least one type of alkali metal selected from Li, Na, K, Rb, and Cs and including at least Na and/or K; and x is from 0.001 to 0.3) and having a particle diameter D50, which is the median diameter at a cumulative volume of 50% in particle size distribution, of from 2 ?m to 200 ?m inclusive. The complex fluoride fluorophore being dispersed in the thermoplasticresin.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: May 29, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Toshihiro Tsumori, Masami Kaneyoshi, Masatoshi Ishii, Takehisa Minowa
  • Patent number: 9978913
    Abstract: An outdoor luminaire comprising a blue LED chip having a maximum peak at a wavelength of 420-480 nm and a phosphor layer disposed forward of the LED chip in its emission direction is provided. The phosphor layer comprises a phosphor of the formula: Lu3Al5O12:Ce3+ which is activated with up to 1 mol % of Ce relative to Lu, the phosphor being dispersed in a resin. In scotopic and mesopic vision conditions, the luminaire produces illumination affording brighter lighting, higher visual perception and brightness over a broader area.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: May 22, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Toshihiro Tsumori, Toshihiko Tsukatani, Kazuhiro Wataya, Takehisa Minowa
  • Patent number: 9953750
    Abstract: A sintered Nd base magnet segment has a coercive force high at the periphery and lower toward the inside. A method for preparing the magnet includes the steps of: (a) providing a sintered Nd base magnet block having surfaces and a magnetization direction, (b) coating the surfaces of the magnet block excluding the surface perpendicular to the magnetization direction with a Dy or Tb oxide powder, a Dy or Tb fluoride powder, or a Dy or Tb-containing alloy powder, (c) treating the coated block at a high temperature for causing Dy or Tb to diffuse into the block, and (d) cutting the block in a plane perpendicular to the magnetization direction into a magnet segment having a coercive force distribution on the cut section that the coercive force is high at the periphery and lower toward the inside and a constant coercive force distribution in the magnetization direction.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: April 24, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Koji Miyata, Takehisa Minowa, Hajime Nakamura, Koichi Hirota, Masakatsu Honshima
  • Patent number: 9951439
    Abstract: In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. A metal element M (M is at least one metal element selected from at least one of a first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, a second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu and a third group consisting of Al, Ga, Ge, Sn, Pb and Zn) is added to the Si—C solution and the crucible is heated to elute Si and C, which are derived from a main component SiC of the crucible, from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution. In this way, precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution is suppressed.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: April 24, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Naofumi Shinya, Yu Hamaguchi, Norio Yamagata, Takehisa Minowa
  • Patent number: 9945047
    Abstract: In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. The SiC crucible is heated such that, for example, an isothermal line representing a temperature distribution within the crucible draws an inverted convex shape; and Si and C, which are derived from a main component SiC of the crucible, are eluted from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution, thereby suppressing precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution. To the Si—C solution of this state, a SiC seed crystal is moved down from the upper portion of the crucible closer to the Si—C solution and brought into contact with the Si—C solution to grow a SiC single crystal on the SiC seed crystal.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: April 17, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Naofumi Shinya, Yu Hamaguchi, Norio Yamagata, Takehisa Minowa