Abstract: A dielectric ceramic contains a barium titanate and Li. In the dielectric ceramic, the following inequalities are satisfied: 0.5?e?6.0, 0.06<Rg<0.17, and ?g<0.075, where e is the content, in molar parts, of Li with respect to 100 molar parts of the titanate; Rg is the average size, in ?m, of grains in the dielectric ceramic; and ?g is the standard deviation, in ?m, of the size of the grains.

Abstract: In a laminate type ceramic electronic component, when an external electrode for a laminated ceramic capacitor is formed directly by plating onto a surface of a component main body, the film that is directly plated may have a low fixing strength with respect to the component main body. As the external electrode, a first plating layer composed of a Ni—P plating film with a P content rate of about 9 weight % or more is first formed such that a plating deposition deposited with the exposed ends of respective internal electrodes as starting points is grown on at least an end surface of a component main body. Then, a second plating layer composed of a Ni plating film containing substantially no P is formed on the first plating layer. Preferably, the first plating layer is formed by electroless plating, whereas the second plating layer is formed by electrolytic plating.

Abstract: In a laminate type ceramic electronic component, when an external electrode is formed directly by plating onto a surface of a component main body, the plating film that is to serve as the external electrode may have a low fixing strength with respect to the component main body. In order to prevent this problem, an external electrode includes a first plating layer composed of a Ni—B plating film and is first formed such that a plating deposition deposited with the exposed ends of respective internal electrodes as starting points is grown on at least an end surface of a component main body. Then, a second plating layer composed of a Ni plating film containing substantially no B is formed on the first plating layer. Preferably, the B content of the Ni—B plating film constituting the first plating layer is about 0.1 wt % to about 6 wt %.

Abstract: A dielectric ceramic material is composed of a perovskite compound represented by ABO3 as a main component. In the case where ABO3 is, for example, BaTiO3, the crystal grains include BaTiO3 crystal grains composed of the main component and, as secondary phases, Mg—Ni—Ti-containing crystalline grains composed of a crystalline oxide containing at least Mg, Ni, and Ti and Ba—Si-containing crystalline grains composed of a crystalline oxide containing at least Ba and Si.

Abstract: A laminate includes insulating layers laminated to each other. Capacitor conductors are embedded in the laminate and have exposed portions exposed between the insulating layers at respective surfaces of the laminate. The capacitor conductors define a capacitor. External electrodes are provided by plating on the respective surfaces of the laminate so as to directly cover the respective exposed portions. When the laminate is viewed in plan in a y axis direction, the length of each of the exposed portions is approximately 35% to approximately 45% of the length of an outer periphery of the insulating layer.

Abstract: A ceramic electronic component includes a ceramic element including opposed side surfaces, an inner electrode, and an external terminal electrode. The external terminal electrode includes a first conductive layer and a second conductive layer. The first conductive layer is formed by plating so as to be electrically coupled to an exposed section of the internal electrode exposed to the side surfaces. The second conductive layer is arranged so as to cover the first conductive layer and includes conductive resin. The value of T2/T1 is in the range of about 3.4 to about 11.3, where T1 indicates the thickness of the first conductive layer and T2 indicates the thickness of the second conductive layer.

Abstract: A dielectric ceramic contains a BaTiO3-based compound as a main ingredient, and can be represented by the general formula: 100AmBO3+aNiO+bROn+cMOv+dMgO+eXOw where R represents a rare earth element such as Dy, M represents a metal element such as Mn, and X represents a sintering aid component containing Si. Ni is uniformly solid-solved in crystal grains, and the solid-solution region of the rare earth element in the crystal grains is an average 10% or less in terms of a cross section ratio. 0.96?m?1.030, 0.05?a?3, 0.1?b?1.5, 0.1?c?1.0, 0.1?d?1.5, and 0.05?e?3.5 are satisfied. A laminated ceramic capacitor has dielectric layers formed of the dielectric ceramic. As a result, a dielectric ceramic, and a laminated ceramic capacitor having excellent AC voltage characteristics, capable of keeping desired dielectric characteristics and excellent temperature characteristics, and having excellent withstand voltage and capable of ensuring reliability can be realized.

Abstract: In a multilayer ceramic electronic component, in an exposed area defined by exposed portions of a plurality of internal conductors, an area ratio of exposed portions in an end section of the exposed area is smaller than that of exposed portions in a center section of the exposed area.

Abstract: A dielectric ceramic represented by a general formula: 100BamTiO3+aROn+bMOv+cXOw (where R represents a rare earth element, M represents a predetermined metal element, and n, v, and w represent independently a positive number determined in accordance with the valences of the elements R and M and a sintering aid component X, respectively), and the solid solution regions of the secondary components in the main phase grains are 10% or less (including 0%) on average in terms of a cross-sectional area ratio. The sintering aid component X contains at least Si, and m, a, b, and c satisfy 0.995?m?1.030, 0.1?a?2.0, 0.1?b?3.0, and 0.1?c?5.0. In a monolithic ceramic capacitor, dielectric layers are formed from the above-described dielectric ceramic.

Abstract: A dielectric ceramic contains a BaTiO3-based compound as a main ingredient, and can be represented by the general formula: 100AmBO3+aNiO+bROn+cMOv+dMgO+eXOw where R represents a rare earth element such as Dy, M represents a metal element such as Mn, and X represents a sintering aid component containing Si. Ni is uniformly solid-solved in crystal grains, and the solid-solution region of the rare earth element in the crystal grains is an average 10% or less in terms of a cross section ratio. 0.96?m?1.030, 0.05?a?3, 0.1?b?1.5, 0.1?c?1.0, 0.1?d?1.5, and 0.05?e?3.5 are satisfied. A laminated ceramic capacitor has dielectric layers formed of the dielectric ceramic. As a result, a dielectric ceramic, and a laminated ceramic capacitor having excellent AC voltage characteristics, capable of keeping desired dielectric characteristics and excellent temperature characteristics, and having excellent withstand voltage and capable of ensuring reliability can be realized.

Abstract: A dielectric ceramic contains a barium titanate and Li. In the dielectric ceramic, the following inequalities are satisfied: 0.5?e?6.0, 0.06<Rg<0.17, and ?g<0.075, where e is the content, in molar parts, of Li with respect to 100 molar parts of the titanate; Rg is the average size, in ?m, of grains in the dielectric ceramic; and ?g is the standard deviation, in ?m, of the size of the grains.

Abstract: A dielectric ceramic material is composed of a perovskite compound represented by ABO3 as a main component. In the case where ABO3 is, for example, BaTiO3, the crystal grains include BaTiO3 crystal grains composed of the main component and, as secondary phases, Mg—Ni—Ti-containing crystalline grains composed of a crystalline oxide containing at least Mg, Ni, and Ti and Ba—Si-containing crystalline grains composed of a crystalline oxide containing at least Ba and Si.

Abstract: A laminated ceramic electronic component includes first internal electrodes and second internal electrodes that overlap each other through ceramic layers, each of the first and second internal electrodes having first and second effective portions, first and second connecting portions, and first and second extended portions whose film thickness is greater than that of the first and second connecting portions and which are exposed at the outer surface of a ceramic element assembly. When distances from side surfaces of the ceramic assembly on which first and second external electrodes are provided to the inner edges of the first and second extended portions are defined as L1 and L2, respectively, and a distance between side surfaces and the end of the second internal electrode or the end of the first internal electrode is defined as G2 or G1, G2>L1 and G1>L2 are satisfied.

Abstract: A dielectric ceramic represented by a general formula: 100BamTiO3+aROn+bMOv+cXOw (where R represents a rare earth element, M represents a predetermined metal element, and n, v, and w represent independently a positive number determined in accordance with the valences of the elements R and M and a sintering aid component X, respectively), and the solid solution regions of the secondary components in the main phase grains are 10% or less (including 0%) on average in terms of a cross-sectional area ratio. The sintering aid component X contains at least Si, and m, a, b, and c satisfy 0.995?m?1.030, 0.1?a?2.0, 0.1?b?3.0, and 0.1?c?5.0. In a monolithic ceramic capacitor, dielectric layers are formed from the above-described dielectric ceramic.

Abstract: Dielectric ceramic having a high dielectric constant of 5,500 or more and exhibiting good dielectric constant temperature characteristic, and a small, high-capacitance monolithic ceramic capacitor having an electrostatic capacitance temperature characteristic satisfying the X5R characteristic are provided. The dielectric ceramic includes a BaTiO3 based or (Ba,Ca)TiO3 based primary component, a rare-earth element and Cu, and has a structure composed of crystal grains and grain boundaries between the crystal grains.

Abstract: The dielectric ceramic has a composition represented by general formula 100(Ba1-x-ySrxCay)m(Ti1-zZrz)O3+aBaO+bR2O3+cMgO+dMnO+eCuO+fV2O5+gXuOv (where R is a rare-earth element such as La, Ce or Pr; and XuOv is an oxide group including at least Si); and 0?x?0.05, 0?y?0.08 (preferably 0.02?y?0.08), 0?z?0.05, 0.990?m, 100.2?(100 m+a)?102, 0.05?b?0.5, 0.05?c?2, 0.05?d?1.3, 0.1?e?1.0, 0.02?f?0.15, and 0.2?g?2. With this composition, a monolithic ceramic capacitor retaining good dielectric characteristics and temperature characteristics even if a high field strength voltage is applied by further thinning the dielectric layers thereof and having excellent reliability achieving good isolating property, dielectric strength, and high-temperature load life is obtained.

Abstract: The dielectric ceramic has a composition represented by general formula 100(Ba1-x-ySrxCay)m(Ti1-zZrz)O3+aBaO+bR2O3+cMgO+dMnO+eCuO+fV2O5+gXuOv (where R is a rare-earth element such as La, Ce or Pr; and XuOv is an oxide group including at least Si); and 0?x?0.05, 0?y?0.08 (preferably 0.02?y?0.08), 0?z?0.05, 0.990?m, 100.2?(100 m+a)?102, 0.05?b?0.5, 0.05?c?2, 0.05?d?1.3, 0.1?e?1.0, 0.02?f?0.15, and 0.2?g?2. With this composition, a monolithic ceramic capacitor retaining good dielectric characteristics and temperature characteristics even if a high field strength voltage is applied by further thinning the dielectric layers thereof and having excellent reliability achieving good isolating property, dielectric strength, and high-temperature load life is obtained.

Abstract: Dielectric ceramic having a high dielectric constant of 5,500 or more and exhibiting good dielectric constant temperature characteristic, and a small, high-capacitance monolithic ceramic capacitor having an electrostatic capacitance temperature characteristic satisfying the X5R characteristic are provided. The dielectric ceramic includes a BaTiO3 based or (Ba,Ca)TiO3 based primary component, a rare-earth element and Cu, and has a structure composed of crystal grains and grain boundaries between the crystal grains.