Abstract: In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

Abstract: Fabrication of a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium includes depositing such particles having a single particle diameter and uniform structure onto a substrate with the transparent medium.

Abstract: A particle counter counts particles in aerosol having a particle size of from 2 nm to 50 nm in an operating pressure range from an atmospheric pressure through a reduced pressure to a low vacuum and calculate a particle size distribution. The particle counter charges particles in the aerosol and applies an electrostatic field thereto, and mixes the aerosol with a non-charged sheath gas flow shaped like a laminar flow whereby the respective particles separate into traces depending on their particle size where they can be counted. Further, by using an electron multiplier for exciting cluster ions to detect the charged particles and operating it as a high-pass filter, even if the number density of the particles is small, it is possible to effectively count the particles.

Abstract: In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

Abstract: In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

Abstract: An optoelectronic material, device applications, and methods for manufacturing the optoelectronic material are provided to make it possible to obtain stable characteristics without deterioration of luminescence over time in the atmosphere. The optoelectronic material is composed of a porous silicon the surface of which is nitrided to form a silicon nitride layer thereon. This allows a stable electroluminescence to be obtained, without oxidation of the surface of the porous silicon.

Abstract: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same.

Abstract: An apparatus for producing high-purity standard particles produces nanometer-sized high-purity standard particles of monodispersive uniform structure efficiently, with the abatement of contamination and damage. The apparatus includes a particle generation chamber, a particle classification chamber and a particle collecting chamber. The particle generation chamber excites a semiconductor target with pulse laser beam under a low-pressure rare gas ambient so as to detach and eject materials from the target into the ambient gas, in which those materials are condensed and grow into high-purity particles. The particle classification chamber subjects the high-purity particles as generated to classification, and the particles collecting chamber collects high-purity standard particles as classified onto a substrate.

Abstract: A fine-particle classification apparatus includes an aerosol generation section which generates an aerosol containing fine particles in a medium background gas, a fine-particle classification section which classifies the fine particles contained in the aerosol in a sheath gas, and an introduction section, between the aerosol generation section and the fine-particle classification section, which introduces the aerosol generated in the aerosol generation section into the fine-particle classification section. The introduction section uses a carrier gas with an adequately high velocity to introduce the aerosol generated in the aerosol generation section to the classification section using a pressure difference.

Abstract: A particle counter counts particles in aerosol having a particle size of from 2 nm to 50 nm in an operating pressure range from an atmospheric pressure through a reduced pressure to a low vacuum and calculate a particle size distribution. The particle counter charges particles in the aerosol and applies an electrostatic field thereto, and mixes the aerosol with a non-charged sheath gas flow shaped like a laminar flow whereby the respective particles separate into traces depending on their particle size where they can be counted. Further, by using an electron multiplier for exciting cluster ions to detect the charged particles and operating it as a high-pass filter, even if the number density of the particles is small, it is possible to effectively count the particles.

Abstract: In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

Abstract: The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure.

Abstract: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same.

Abstract: The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure.

Abstract: Fabrication of a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium includes depositing such particles having a single particle diameter and uniform structure onto a substrate with the transparent medium.

Abstract: A provider architects an environment for connection to the Internet, to architect a network security system over a home server and Web terminal connected to the Internet. The network security system has a firewall and anti-virus software. The provider bills the initial fee in return for architecting the network security system. Furthermore, it makes a regular billing in return for providing such a service as regularly updating the system.

Abstract: The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided.

Abstract: An optoelectronic material, device applications, and methods for manufacturing the optoelectronic material are provided to make it possible to obtain stable characteristics without deterioration of luminescence over time in the atmosphere. The optoelectronic material is composed of a porous silicon the surface of which is nitrided to form a silicon nitride layer thereon. This allows a stable electroluminescence to be obtained, without oxidation of the surface of the porous silicon.

Abstract: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same.

Abstract: A method of depositing nano-particles in a gas stream for efficiently depositing nano-particles by irradiating an electron beam on charged nano-particles in the stream of a first gas species containing the nano-particles, as well as a method of modifying the surface of the nano-particles in a gas stream by mixing them with the first gas species in a gas mixing chamber thereby activating the second gas species, intended for providing a method of depositing nano-particles and a method of modifying the surface thereof in a gas stream, capable of efficiently depositing the nano-particles in a charged state in a gas stream and modifying the surface of the nano-particles which are extremely sensitive to defects and impurities caused by large exposure ratio of surface atoms in a gas stream at a good controllability.