Abstract: The purpose of the present invention is to finely adjust a resonance frequency with high accuracy and to produce excellent resonance characteristics in a piezoelectric thin film vibrator. The present invention is characterized in that a frequency adjusting layer is formed on the uppermost layer of the piezoelectric thin film vibrator and is irradiated with exciting energy to be gradually decreased in thickness to thereby adjust the resonance frequency. Further, the present invention is characterized in that ultrafine particles are gradually deposited on the uppermost layer of the piezoelectric thin film vibrator to thereby adjust the resonance frequency. According to the present invention, by adjusting the resonance frequency by a fine unit with high accuracy, it is possible to match the resonance frequency with a desired frequency precisely and thus to provide excellent and stable resonance characteristics.

Abstract: The object of the present invention is to provide a particle counter that can count particles in aerosol having a particle size of from 2 nm to 50 nm in an operating pressure range from an atmospheric pressure through a reduced pressure to a low vacuum and calculate a particle size distribution. The present invention provides a particle counter that charges particles existing in the aerosol and then applies an electrostatic field to the particles, and a particle counter that charges the particles existing in the aerosol and then mixes the aerosol with a non-charged sheath gas flow shaped like a laminar flow and applies an electrostatic field to the particles. This can get the respective particles into traces depending on their particle size. Thus, it is possible to count the number of particles having specific traces.

Abstract: A method of depositing nano-particles in a gas stream for efficiently depositing nano-particles by irradiating an electron beam on charged nano-particles in the stream of a first gas species containing the nano-particles, as well as a method of modifying the surface of the nano-particles in a gas stream by mixing them with the first gas species in a gas mixing chamber thereby activating the second gas species, intended for providing a method of depositing nano-particles and a method of modifying the surface thereof in a gas stream, capable of efficiently depositing the nano-particles in a charged state in a gas stream and modifying the surface of the nano-particles which are extremely sensitive to defects and impurities caused by large exposure ratio of surface atoms in a gas stream at a good controllability.

Abstract: In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 101 under a constant certain pressure when the laser ablation is performed, using a target material with almost or the same composition as that of a thin film to be obtained. It is thereby possible to obtain a thin film with the same composition as that of the target material readily, without requiring an introduction of O2 g as and a substrate heating. As a result, it is not necessary to limit materials for a substrate, and it is possible to adjust the adaptability of an anaerobic process.

Abstract: An optoelectronic material, device applications, and methods for manufacturing the optoelectronic material are provided to make it possible to obtain stable characteristics without deterioration of luminescence over time in the atmosphere. The optoelectronic material is composed of a porous silicon the surface of which is nitrided to form a silicon nitride layer thereon. This allows a stable electroluminescence to be obtained, without oxidation of the surface of the porous silicon.

Abstract: A high-purity standard particles production apparatus together with the particles as produced by the same is provided, wherein nanometer-sized high-purity standard particles of wide selectivity in material and monodispersive uniform structure are efficiently produced with the abatement of contamination and damage thereon. The apparatus comprises a particles generation chamber to excite a semiconductor target with pulse laser beam under a low-pressure rare gas ambient so as to desorb and eject materials from the target into the ambient gas, in which those materials are condensed and grow into high-purity particles, a particles classification chamber to subject the high-purity particles as generated to classification and a particles collecting chamber to collect high-purity standard particles as classified onto a substrate.

Abstract: In the fine-particle classification apparatus of the present invention, a carrier gas velocity in a take-in section to introduce the aerosol to the fine-particle classification apparatus from the aerosol generation apparatus is increased so as to decrease the static pressure in the take-in section. It is thereby possible to decrease the static pressure in the take-in section than the total pressure in the aerosol generation apparatus. As a result, it is possible to introduce the aerosol inside the fine-particle classification apparatus with a total pressure equal to or higher than that in the aerosol generation apparatus from a fine particle generating area, i.e. aerosol generation apparatus with a pressure equal to or lower than that in the fine-particle classification apparatus.

Abstract: In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 101 under a constant certain pressure when the laser ablation is performed, using a target material with almost or the same composition as that of a thin film to be obtained. It is thereby possible to obtain a thin film with the same composition as that of the target material readily, without requiring an introduction of O2 gas and a substrate heating. As a result, it is not necessary to limit materials for a substrate, and it is possible to adjust the adaptability of an anaerobic process.

Abstract: The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure.

Abstract: In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

Abstract: A fine-particle classification apparatus includes an aerosol generation section which generates an aerosol containing fine particles in a medium background gas, a fine-particle classification section which classifies the fine particles contained in the aerosol in a sheath gas, and an introduction section, between the aerosol generation section and the fine-particle classification section, which introduces the aerosol generated in the aerosol generation section into the fine-particle classification section. The introduction section uses a carrier gas with an adequately high velocity to introduce the aerosol generated in the aerosol generation section to the classification section using a pressure difference.

Abstract: The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided.

Abstract: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same.

Abstract: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same.

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

Abstract: A method of fabricating a semiconductor device wherein after forming a titanium silicide thin film on a silicon substrate, dopant impurities are implanted into the silicon substrate through the titanium silicide thin film so as to form shallow p.sup.+ -n junctions in the silicon substrate. At least one of the following conditions (1) to (3) is satisfied: (1) forty to seventy percent of the total implant dose is within the n-type silicon substrate; (2) the projected range is set at the depth corresponding to 90% to 125% of the titanium silicide film thickness; and (3) the dopant dose that comes to rest within the n-type silicon substrate is in the range of 2.0.times.10.sup.15 /cm.sup.2 to 3.5.times.10.sup.15 /cm.sup.2.