Abstract: An infrared light detector with an infrared light sensitivity thereof further improved. According to the infrared light detector, an isolated region of a first electronic layer is switched between a “disconnected status” and a “connected status”. Under the connected status, saturation of an electrostatic charge quantity of the isolated region in the disconnected status is eliminated, and consequently, saturation of a variation amount of an electrical conductivity of a second electronic layer is eliminated. Therefore, the infrared light sensitivity is further improved by time integration of the variation amount of the electrical conductivity of the second electronic layer.

Abstract: Provided is an infrared light detector 100 wherein a light coupling mechanism 110 is configured by a metal thin film or metal thin plate in which a plurality of windows apart from each other are formed. Each of the windows is formed by multangular shapes in which a part of the internal angles are obtuse angles. The plurality of windows are periodically arrayed in postures having translational symmetry in at least two directions. The array cycle p of the plurality of windows are set according to a wavelength A? of the infrared light of a substrate including a first electronic layer 110 so as to fall within a range with reference to a value at which a perpendicular oscillating electric field component in a first electronic region 10 indicates a peak value.

Abstract: An infrared light detector with an infrared light sensitivity thereof further improved. According to the infrared light detector, an isolated region of a first electronic layer is switched between a “disconnected status” and a “connected status”. Under the connected status, saturation of an electrostatic charge quantity of the isolated region in the disconnected status is eliminated, and consequently, saturation of a variation amount of an electrical conductivity of a second electronic layer is eliminated. Therefore, the infrared light sensitivity is further improved by time integration of the variation amount of the electrical conductivity of the second electronic layer.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A wet treatment method useful in one of a chemical processing and a rinsing step performed upon fabrication of semiconductor devices. A substrate is treated with a desired liquid while revolving the substrate around an axis of rotation outside the substrate such that the liquid flowing on a surface of the substrate is maintained flowing under a centrifugal force greater than gravitation. The substrate is treated while supplying the liquid at a flow rate at least equal to a discharge rate of the liquid only in a direction conforming with that of the centrifugal force or with that of a flow of the liquid flowing on the surface of the substrate under the centrifugal force. The substrate surface is evenly treated with the liquid while avoiding flows of the liquid running against each other or a flow of the liquid stagnating on the surface of the substrate.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A wet treatment method useful in at least one of a chemical processing step and a rinsing step performed upon fabrication of semiconductor devices is disclosed. According to this method, a substrate under treatment is treated with a desired liquid while causing the substrate to revolve around an axis of rotation outside the substrate itself instead of allowing the substrate to rotate about the axis of rotation such that the liquid flowing on a surface of the substrate is maintained flowing under a centrifugal force greater than gravitation. The substrate is treated while supplying a fresh liquid of the same kind as the desired liquid at a flow rate at least equal to a discharge rate of the desired liquid only in a direction conforming with that of the centrifugal force or with that of a flow of the liquid flowing on the surface of the substrate under the centrifugal force.