Patents by Inventor Takekazu Shinohara

Takekazu Shinohara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11139329
    Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus, in which irregular reflection of light inside a solid-state imaging element package can be suppressed. In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: October 5, 2021
    Assignee: SONY CORPORATION
    Inventors: Kenju Nishikido, Takekazu Shinohara, Shinichiro Noudo, Misato Kondo
  • Patent number: 11139332
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: October 5, 2021
    Assignee: SONY CORPORATION
    Inventor: Takekazu Shinohara
  • Publication number: 20210183934
    Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus, in which irregular reflection of light inside a solid-state imaging element package can be suppressed. In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.
    Type: Application
    Filed: June 30, 2017
    Publication date: June 17, 2021
    Applicant: SONY CORPORATION
    Inventors: Kenju NISHIKIDO, Takekazu SHINOHARA, Shinichiro NOUDO, Misato KONDO
  • Publication number: 20200303434
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Applicant: Sony Corporation
    Inventor: Takekazu Shinohara
  • Patent number: 10680029
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: June 9, 2020
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Publication number: 20190157325
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Application
    Filed: January 23, 2019
    Publication date: May 23, 2019
    Applicant: Sony Corporation
    Inventor: Takekazu Shinohara
  • Patent number: 10283552
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: May 7, 2019
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Publication number: 20180294296
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Application
    Filed: June 8, 2018
    Publication date: October 11, 2018
    Inventor: Takekazu Shinohara
  • Patent number: 10026772
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: July 17, 2018
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Publication number: 20170317119
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Application
    Filed: July 18, 2017
    Publication date: November 2, 2017
    Inventor: Takekazu Shinohara
  • Patent number: 9741760
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: August 22, 2017
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Publication number: 20170098671
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Application
    Filed: December 15, 2016
    Publication date: April 6, 2017
    Inventor: Takekazu Shinohara
  • Patent number: 9564467
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: February 7, 2017
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Publication number: 20160190200
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Application
    Filed: March 9, 2016
    Publication date: June 30, 2016
    Inventor: Takekazu Shinohara
  • Patent number: 9337230
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: May 10, 2016
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Publication number: 20140232918
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Application
    Filed: April 23, 2014
    Publication date: August 21, 2014
    Applicant: SONY CORPORATION
    Inventor: Takekazu Shinohara
  • Patent number: 8749679
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: June 10, 2014
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Patent number: 8736735
    Abstract: A solid-state imaging device is provided, which includes a pixel region in which pixels including a photoelectric conversion section and a plurality of pixel transistors are arranged. In the solid-state imaging device, a transfer transistor of the pixel transistors includes: a transfer gate electrode extended in a surface of the substrate formed on the surface of a semiconductor substrate; and a transfer gate electrode buried in the substrate which is electrically insulated from the transfer gate electrode extended in a surface of the substrate and is embedded in the inside of the semiconductor substrate in the vertical direction through the transfer gate electrode extended in a surface of the substrate.
    Type: Grant
    Filed: May 8, 2013
    Date of Patent: May 27, 2014
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Patent number: 8462249
    Abstract: A solid-state imaging device is provided, which includes a pixel region in which pixels including a photoelectric conversion section and a plurality of pixel transistors are arranged. In the solid-state imaging device, a transfer transistor of the pixel transistors includes: a transfer gate electrode extended in a surface of the substrate formed on the surface of a semiconductor substrate; and a transfer gate electrode buried in the substrate which is electrically insulated from the transfer gate electrode extended in a surface of the substrate and is embedded in the inside of the semiconductor substrate in the vertical direction through the transfer gate electrode extended in a surface of the substrate.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: June 11, 2013
    Assignee: Sony Corporation
    Inventor: Takekazu Shinohara
  • Publication number: 20120033119
    Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
    Type: Application
    Filed: August 2, 2011
    Publication date: February 9, 2012
    Applicant: SONY CORPORATION
    Inventor: Takekazu Shinohara