Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: A solid-state imaging device is provided, which includes a pixel region in which pixels including a photoelectric conversion section and a plurality of pixel transistors are arranged. In the solid-state imaging device, a transfer transistor of the pixel transistors includes: a transfer gate electrode extended in a surface of the substrate formed on the surface of a semiconductor substrate; and a transfer gate electrode buried in the substrate which is electrically insulated from the transfer gate electrode extended in a surface of the substrate and is embedded in the inside of the semiconductor substrate in the vertical direction through the transfer gate electrode extended in a surface of the substrate.

Abstract: A solid-state imaging device is provided, which includes a pixel region in which pixels including a photoelectric conversion section and a plurality of pixel transistors are arranged. In the solid-state imaging device, a transfer transistor of the pixel transistors includes: a transfer gate electrode extended in a surface of the substrate formed on the surface of a semiconductor substrate; and a transfer gate electrode buried in the substrate which is electrically insulated from the transfer gate electrode extended in a surface of the substrate and is embedded in the inside of the semiconductor substrate in the vertical direction through the transfer gate electrode extended in a surface of the substrate.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: A solid-state imaging device is provided, which includes a pixel region in which pixels including a photoelectric conversion section and a plurality of pixel transistors are arranged. In the solid-state imaging device, a transfer transistor of the pixel transistors includes: a transfer gate electrode extended in a surface of the substrate formed on the surface of a semiconductor substrate; and a transfer gate electrode buried in the substrate which is electrically insulated from the transfer gate electrode extended in a surface of the substrate and is embedded in the inside of the semiconductor substrate in the vertical direction through the transfer gate electrode extended in a surface of the substrate.