Patents by Inventor Takekazu Tanaka
Takekazu Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240109670Abstract: [Object] To provide a control device which enables a flight vehicle device to obtain a highly precise image. [Solution] Provided is the control device including an illuminating control unit configured to adjust a light amount of an illuminating device according to an inclination of a fuselage of a flight vehicle device that has an imaging device configured to photograph a photographing target and the illuminating device configured to illuminate the photographing target.Type: ApplicationFiled: December 6, 2023Publication date: April 4, 2024Applicant: Sony Group CorporationInventors: Kohtaro SABE, Kayoko TANAKA, Kousuke SUZUKI, Masaaki MASUDA, Takekazu KAKINUMA, Kazunori HAYASHI
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Patent number: 8395261Abstract: A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.Type: GrantFiled: June 22, 2012Date of Patent: March 12, 2013Assignee: Renesas Electronics CorporationInventors: Takekazu Tanaka, Kouhei Takahashi, Seiji Okabe
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Patent number: 8334596Abstract: A semiconductor device includes an electrode pad provided on a semiconductor chip, in which the electrode pad includes aluminum (Al) as a major constituent and further including copper (Cu), a coupling ball primarily including Cu, the coupling ball is coupled to the electrode pad such that a plurality of layers of Cu and Al alloys are formed at a junction between the electrode pad and the coupling ball, and an encapsulating resin including a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and the junction between the electrode pad and the coupling ball. A dimensional area of the plurality of layers of Cu and Al alloys is equal to or larger than 50% of a dimensional area of the junction between the electrode pad and the coupling ball. The plurality of layers of Cu and Al alloys includes a CuAl2 layer, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.Type: GrantFiled: April 4, 2011Date of Patent: December 18, 2012Assignee: Renesas Electronics CorporationInventors: Takekazu Tanaka, Kouhei Takahashi, Seiji Okabe
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Publication number: 20120306077Abstract: A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.Type: ApplicationFiled: June 22, 2012Publication date: December 6, 2012Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Takekazu Tanaka, Kouhei Takahashi, Seiji Okabe
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Patent number: 8299620Abstract: A semiconductor device and a manufacturing method for preventing mechanical and thermal damage to the semiconductor chip. A laser beam welds a first connection pad formed on a first external lead to a first electrode formed on the surface of the semiconductor chip. A first connection hole is formed in the first connection pad, and the first connection hole overlaps the first connection electrode. A laser beam irradiates an area including the first connection hole, and the first connection pad in a portion around the first connection hole is melted to form a melting section, that is welded to the first connection electrode to easily form a semiconductor device with more excellent electrical characteristics.Type: GrantFiled: June 27, 2008Date of Patent: October 30, 2012Assignee: Renesas Electronics CorporationInventors: Takekazu Tanaka, Kouhei Takahashi
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Publication number: 20110241204Abstract: A semiconductor device includes an electrode pad provided on a semiconductor chip, in which the electrode pad includes aluminum (Al) as a major constituent and further including copper (Cu), a coupling ball primarily including Cu, the coupling ball is coupled to the electrode pad such that a plurality of layers of Cu and Al alloys are formed at a junction between the electrode pad and the coupling ball, and an encapsulating resin including a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and the junction between the electrode pad and the coupling ball. A dimensional area of the plurality of layers of Cu and Al alloys is equal to or larger than 50% of a dimensional area of the junction between the electrode pad and the coupling ball. The plurality of layers of Cu and Al alloys includes a CuAl2 layer, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.Type: ApplicationFiled: April 4, 2011Publication date: October 6, 2011Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Takekazu Tanaka, Kouhei Takahashi, Seiji Okabe
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Patent number: 7944052Abstract: A semiconductor device includes a semiconductor chip, an electrode pad provided in the semiconductor chip, in which the electrode pad includes Al as a major constituent and further includes Cu, a coupling member coupled to the electrode pad, in which the coupling member primarily includes Cu, a plurality of layers of Cu and Al alloys formed between the electrode pad and the coupling member, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, in which the encapsulating resin encapsulates the semiconductor chip, the electrode pad, and the coupling member. The plurality of layers of Cu and Al alloys includes a CuAl2 layer formed on the electrode pad, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.Type: GrantFiled: August 3, 2010Date of Patent: May 17, 2011Assignee: Renesas Electronics CorporationInventors: Takekazu Tanaka, Kouhei Takahashi, Seiji Okabe
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Publication number: 20110062585Abstract: A semiconductor device includes a semiconductor chip, an electrode pad provided in the semiconductor chip, in which the electrode pad includes Al as a major constituent and further includes Cu, a coupling member coupled to the electrode pad, in which the coupling member primarily includes Cu, a plurality of layers of Cu and Al alloys formed between the electrode pad and the coupling member, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, in which the encapsulating resin encapsulates the semiconductor chip, the electrode pad, and the coupling member. The plurality of layers of Cu and Al alloys includes a CuAl2 layer formed on the electrode pad, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.Type: ApplicationFiled: August 3, 2010Publication date: March 17, 2011Applicant: NEC ELECTRONICS CORPORATIONInventors: Takekazu TANAKA, Kouhei TAKAHASHI, Seiji OKABE
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Patent number: 7820489Abstract: A method of manufacturing a semiconductor apparatus includes forming an electrode on a semiconductor device, forming a conductive bump on the electrode, placing an external wire on the conductive bump, and laser-welding the external wire and the conductive bump to establish electrical connection.Type: GrantFiled: March 23, 2007Date of Patent: October 26, 2010Assignee: NEC Electronics CorporationInventors: Takekazu Tanaka, Kouhei Takahashi
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Semiconductor device including a coupling region which includes layers of aluminum and copper alloys
Patent number: 7791198Abstract: An improved reliability in a region of a junction between a bonding wire and an electrode pad at higher temperature is achieved. A semiconductor device 100 includes a semiconductor chip 102, AlCu pads 107, which are provided in the semiconductor chip 102 and which contain Al as a major constituent and additionally contain copper (Cu), and CuP wires 111, which function as coupling members for connecting inner leads 117 provided outside of the semiconductor chip 102 with the semiconductor chip 102, and primarily contain Cu. The AlCu pads 107 and the CuP wires 111 are encapsulated with an encapsulating resin 115 that contains substantially no halogen.Type: GrantFiled: February 4, 2008Date of Patent: September 7, 2010Assignee: NEC Electronics CorporationInventors: Takekazu Tanaka, Kouhei Takahashi, Seiji Okabe -
Patent number: 7772031Abstract: The semiconductor apparatus includes a semiconductor chip, and a source electrode and a gate electrode which are formed on the semiconductor chip and electrically connected with a lead frame. The source electrode is electrically connected with the lead frame by being laser-welded with a thin-film shaped connecting portion formed at an end of the lead frame. This enables the provision of a semiconductor apparatus with enhanced productivity and yields which exhibits high electrical operability and reliability.Type: GrantFiled: January 8, 2007Date of Patent: August 10, 2010Assignee: NEC Electronics CorporationInventors: Takekazu Tanaka, Kouhei Takahashi
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Patent number: 7723837Abstract: A technology providing an improvement in the durability in the condition of changing the temperature, while ensuring characteristics such as the applicability to applications utilizing larger electric current, lower resistance and the like can be achieved. A semiconductor device 100 includes a ceramic multiple-layered interconnect substrate 120, a silicon chip 110 that is flip-bonded to a chip-carrying region of the ceramic multiple-layered interconnect substrate 120, and an external connecting bumps 161 and an external connecting bumps 163, which are provided in the side that the silicon chip 110 of the ceramic multiple-layered interconnect substrate 120 is carried. The silicon chip 110 includes a front surface electrode and a back surface electrode.Type: GrantFiled: January 19, 2006Date of Patent: May 25, 2010Assignee: NEC Electronics CorporationInventors: Takekazu Tanaka, Ikuo Komatsu
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Patent number: 7550829Abstract: A package for an electronic component including a chip mounting area mounting a semiconductor chip in a hollow part of a metal plate and a plurality of connection electrodes to be connected to a substrate. The plurality of connection electrodes are formed in opposite sides of the rectangular metal plate and arranged asymmetrically with respect to a perpendicular bisector of the opposite sides.Type: GrantFiled: August 20, 2007Date of Patent: June 23, 2009Assignee: NEC Electronics CorporationInventor: Takekazu Tanaka
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Publication number: 20090008775Abstract: A semiconductor device and a manufacturing method for preventing mechanical and thermal damage to the semiconductor chip. A laser beam welds a first connection pad formed on a first external lead to a first electrode formed on the surface of the semiconductor chip. A first connection hole is formed in the first connection pad, and the first connection hole overlaps the first connection electrode. A laser beam irradiates an area including the first connection hole, and the first connection pad in a portion around the first connection hole is melted to form a melting section, that is welded to the first connection electrode to easily form a semiconductor device with more excellent electrical characteristics.Type: ApplicationFiled: June 27, 2008Publication date: January 8, 2009Inventors: Takekazu TANAKA, Kouhei TAKAHASHI
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Patent number: 7449370Abstract: In a semiconductor package including at least one plate-like mount, a semiconductor chip has at least one electrode formed on a top surface thereof, and is mounted on the plate-like mount such that a bottom surface of the semiconductor chip is in contact with the plate-like mount. The semiconductor package also includes at least one lead element having an outer portion arranged to be flush with the plate-like mount, and an inner portion deformed and shaped to overhang the semiconductor chip such that an inner end of the lead element is spaced apart from the top surface of the semiconductor chip. The semiconductor package further includes a bonding-wire element bonded at ends thereof to the electrode of the semiconductor chip and the inner end of the lead element, an enveloper sealing and encapsulating the plate-like mount, the semiconductor chip, the inner portion of the lead element, and the bonding-wire element.Type: GrantFiled: October 4, 2006Date of Patent: November 11, 2008Assignee: NEC Electronics CorporationInventor: Takekazu Tanaka
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Publication number: 20080203568Abstract: An improved reliability in a region of a junction between a bonding wire and an electrode pad at higher temperature is achieved. A semiconductor device 100 includes a semiconductor chip 102, AlCu pads 107, which are provided in the semiconductor chip 102 and which contain Al as a major constituent and additionally contain copper (Cu), and CuP wires 111, which function as coupling members for connecting inner leads 117 provided outside of the semiconductor chip 102 with the semiconductor chip 102, and primarily contain Cu. The AlCu pads 107 and the CuP wires 111 are encapsulated with an encapsulating resin 115 that contains substantially no halogen.Type: ApplicationFiled: February 4, 2008Publication date: August 28, 2008Applicant: NEC ELECTRONICS CORPORATIONInventors: Takekazu Tanaka, Kouhei Takahashi, Seiji Okabe
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Publication number: 20080001265Abstract: A package for an electronic component including a chip mounting area mounting a semiconductor chip in a hollow part of a metal plate and a plurality of connection electrodes to be connected to a substrate. The plurality of connection electrodes are formed in opposite sides of the rectangular metal plate and arranged asymmetrically with respect to a perpendicular bisector of the opposite sides.Type: ApplicationFiled: August 20, 2007Publication date: January 3, 2008Applicant: NEC ELECTRONICS CORPORATIONInventor: Takekazu Tanaka
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Publication number: 20070249152Abstract: A method of manufacturing a semiconductor apparatus includes forming an electrode on a semiconductor device, forming a conductive bump on the electrode, placing an external wire on the conductive bump, and laser-welding the external wire and the conductive bump to establish electrical connection.Type: ApplicationFiled: March 23, 2007Publication date: October 25, 2007Inventors: Takekazu Tanaka, Kouhei Takahashi
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Patent number: 7274090Abstract: A package for an electronic component according to one embodiment of the invention has a chip mounting area mounting a semiconductor chip in a hollow part of a metal plate and a plurality of connection electrodes to be connected to a substrate. The plurality of connection electrodes are formed in opposite sides of the rectangular metal plate and arranged asymmetrically with respect to a perpendicular bisector of the opposite sides.Type: GrantFiled: June 29, 2005Date of Patent: September 25, 2007Assignee: NEC Electronics CorporationInventor: Takekazu Tanaka
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Publication number: 20070172980Abstract: The semiconductor apparatus includes a semiconductor chip, and a source electrode and a gate electrode which are formed on the semiconductor chip and electrically connected with a lead frame. The source electrode is electrically connected with the lead frame by being laser-welded with a thin-film shaped connecting portion formed at an end of the lead frame. This enables the provision of a semiconductor apparatus with enhanced productivity and yields which exhibits high electrical operability and reliability.Type: ApplicationFiled: January 8, 2007Publication date: July 26, 2007Inventors: Takekazu Tanaka, Kouhei Takahashi