Patents by Inventor Takekazu Yamane
Takekazu Yamane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20180277749Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.Type: ApplicationFiled: June 2, 2016Publication date: September 27, 2018Applicant: TDK CORPORATIONInventors: Junichiro URABE, Tetsuya SHIBATA, Atsushi SHIMURA, Takekazu YAMANE, Tsuyoshi SUZUKI
-
Patent number: 10074688Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.Type: GrantFiled: July 28, 2017Date of Patent: September 11, 2018Assignee: TDK CORPORATIONInventors: Tetsuya Shibata, Tsuyoshi Suzuki, Junichiro Urabe, Takekazu Yamane, Atsushi Shimura
-
Publication number: 20180159492Abstract: A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.Type: ApplicationFiled: January 12, 2018Publication date: June 7, 2018Applicant: TDK CORPORATIONInventors: Tetsuya SHIBATA, Junichiro URABE, Atsushi SHIMURA, Takekazu YAMANE
-
Patent number: 9966922Abstract: A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.Type: GrantFiled: May 19, 2017Date of Patent: May 8, 2018Assignee: TDK CORPORATIONInventors: Tetsuya Shibata, Junichiro Urabe, Takekazu Yamane, Tsuyoshi Suzuki
-
Patent number: 9948267Abstract: A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.Type: GrantFiled: February 22, 2017Date of Patent: April 17, 2018Assignee: TDK CORPORATIONInventors: Takekazu Yamane, Tetsuya Shibata, Junichiro Urabe, Atsushi Shimura
-
Patent number: 9906199Abstract: A magnetoresistive effect device includes a magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer; a first port; a second port; a signal line; an impedance element; and a direct-current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The impedance element is connected to ground and to the signal line between the magnetoresistive effect element and the first port or the second port. The direct-current input terminal is connected to the signal line at the opposite side to the impedance element with the magnetoresistive effect element in between the direct-current input terminal and the impedance element. A closed circuit including the magnetoresistive effect element, the signal line, the impedance element, the ground, and the direct-current input terminal is to be formed.Type: GrantFiled: March 10, 2016Date of Patent: February 27, 2018Assignee: TDK CORPORATIONInventors: Tetsuya Shibata, Junichiro Urabe, Atsushi Shimura, Takekazu Yamane
-
Publication number: 20180040666Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.Type: ApplicationFiled: July 28, 2017Publication date: February 8, 2018Applicant: TDK CORPORATIONInventors: Tetsuya SHIBATA, Tsuyoshi SUZUKI, Junichiro URABE, Takekazu YAMANE, Atsushi SHIMURA
-
Publication number: 20170345449Abstract: A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.Type: ApplicationFiled: May 19, 2017Publication date: November 30, 2017Applicant: TDK CORPORATIONInventors: Tetsuya SHIBATA, Junichiro URABE, Takekazu YAMANE, Tsuyoshi SUZUKI
-
Publication number: 20170244377Abstract: A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.Type: ApplicationFiled: February 22, 2017Publication date: August 24, 2017Applicant: TDK CORPORATIONInventors: Takekazu YAMANE, Tetsuya SHIBATA, Junichiro URABE, Atsushi SHIMURA
-
Publication number: 20160277000Abstract: A magnetoresistive effect device includes a magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer; a first port; a second port; a signal line; an impedance element; and a direct-current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The impedance element is connected to ground and to the signal line between the magnetoresistive effect element and the first port or the second port. The direct-current input terminal is connected to the signal line at the opposite side to the impedance element with the magnetoresistive effect element in between the direct-current input terminal and the impedance element. A closed circuit including the magnetoresistive effect element, the signal line, the impedance element, the ground, and the direct-current input terminal is to be formed.Type: ApplicationFiled: March 10, 2016Publication date: September 22, 2016Applicant: TDK CORPORATIONInventors: Tetsuya SHIBATA, Junichiro URABE, Atsushi SHIMURA, Takekazu YAMANE
-
Patent number: 9129622Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction.Type: GrantFiled: March 15, 2013Date of Patent: September 8, 2015Assignee: TDK CorporationInventors: Takahiko Machita, Naomichi Degawa, Takekazu Yamane, Takumi Yanagisawa, Satoshi Miura, Kenta Hamamoto, Minoru Ota, Kenzo Makino, Shohei Kawasaki
-
Patent number: 8913349Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.Type: GrantFiled: March 29, 2013Date of Patent: December 16, 2014Assignee: TDK CorporationInventors: Takekazu Yamane, Takahiko Machita, Naomichi Degawa, Minoru Ota, Kenta Hamamoto
-
Patent number: 8891208Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.Type: GrantFiled: March 29, 2013Date of Patent: November 18, 2014Assignee: TDK CorporationInventors: Naomichi Degawa, Takahiko Machita, Takekazu Yamane, Takumi Yanagisawa, Satoshi Miura, Kenta Hamamoto, Minoru Ota, Kenzo Makino, Shohei Kawasaki
-
Publication number: 20140293474Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.Type: ApplicationFiled: March 29, 2013Publication date: October 2, 2014Applicant: TDK CORPORATIONInventors: Takekazu YAMANE, Takahiko MACHITA, Naomichi DEGAWA, Minoru OTA, Kenta HAMAMOTO
-
Publication number: 20140293475Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.Type: ApplicationFiled: March 29, 2013Publication date: October 2, 2014Inventors: Naomichi DEGAWA, Takahiko MACHITA, Takekazu YAMANE, Takumi YANAGISAWA, Satoshi MIURA, Kenta HAMAMOTO, Minoru OTA, Kenzo MAKINO, Shohei KAWASAKI
-
Publication number: 20140268405Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Inventors: Takahiko MACHITA, Naomichi DEGAWA, Takekazu YAMANE, Takumi YANAGISAWA, Satoshi MIURA, Kenta HAMAMOTO, Minoru OTA, Kenzo MAKINO, Shohei KAWASAKI
-
Patent number: 8547091Abstract: A measuring method measuring a resistance of a resistor of a magnetic sensor that includes the resistor is provided. The method includes a step of measuring an output voltage of the magnetic sensor in an AC magnetic field, a step of measuring a first combined resistance of the MR element and the resistor in no magnetic field, a step of measuring a second combined resistance of the MR element and the resistor in a constant magnetic field of which a direction and strength are substantially the same as a magnetic field, a step of measuring a third combined resistance of the MR element and the resistor in another constant magnetic field of which a direction and strength are substantially the same as another magnetic field, and a step of calculating the resistance of the resistor based on the output voltage, the first, second and third combined resistance.Type: GrantFiled: December 14, 2010Date of Patent: October 1, 2013Assignee: TDK CorporationInventors: Takekazu Yamane, Naomichi Degawa
-
Patent number: 8542456Abstract: A magnetic head includes a medium facing surface that faces a surface of a recording medium, a write head section, a contact sensor that detects contact of the medium facing surface with the surface of the recording medium, and a heat sink adjacent to the contact sensor. The write head section has a magnetic pole that produces a write magnetic field for writing data on the recording medium. The contact sensor and the heat sink have respective end faces located in the medium facing surface. The contact sensor varies in resistance in response to temperature variations, and is to be energized. The heat sink includes an intermediate layer made of a nonmagnetic metal material, and two ferromagnetic layers made of a metal-based magnetic material, the two ferromagnetic layers being disposed with the intermediate layer therebetween, and being antiferromagnetically exchange-coupled to each other via the intermediate layer.Type: GrantFiled: August 25, 2011Date of Patent: September 24, 2013Assignee: TDK CorporationInventors: Takekazu Yamane, Yosuke Antoku, Katsuki Kurihara, Norio Takahashi, Kenzo Makino
-
Patent number: 8462467Abstract: A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.Type: GrantFiled: October 8, 2010Date of Patent: June 11, 2013Assignee: TDK CorporationInventors: Takumi Yanagisawa, Yasushi Nishioka, Takahiko Machita, Satoshi Miura, Takayasu Kanaya, Kenzo Makino, Yoshikazu Sawada, Takekazu Yamane, Naomichi Degawa, Kosuke Tanaka, Soji Koide, Daisuke Miyauchi
-
Patent number: 8456962Abstract: A magnetic head that writes information to a recording medium includes a magnetic pole layer that generates a writing magnetic field to the recording medium, a microstripline that is disposed in proximity to the magnetic pole layer and to which high frequency current is applied, and a ferromagnetic thin film that is disposed on a portion of the microstripline that faces the recording medium, and that generates a high frequency alternate-current (AC) magnetic field to be applied to the recording medium, using a current magnetic field generated on the microstripline due to the high frequency current.Type: GrantFiled: March 31, 2011Date of Patent: June 4, 2013Assignee: TDK CorporationInventors: Takekazu Yamane, Yoshikazu Soeno, Akimasa Kaizu, Naomichi Degawa, Hayato Koike