Abstract: An integrated circuit device includes a high-speed I/F circuit block which transfers data through a serial bus, and a driver logic circuit block which generates a display control signal. A first-conductivity-type transistor included in the high-speed I/F circuit block is formed in a second-conductivity-type well, and a second-conductivity-type transistor included in the high-speed I/F circuit block is formed in a first-conductivity-type well formed in a second-conductivity-type substrate to enclose the second-conductivity-type well. A first-conductivity-type transistor and a second-conductivity-type transistor included in the driver logic circuit block are formed in a region other than a region of the first-conductivity-type well for the high-speed interface circuit block.

Abstract: A semiconductor device includes a differential signal output circuit that outputs a differential signal, an amplitude control signal generation circuit that generates an amplitude control signal to control an amplitude of the differential signal for the differential signal output circuit, and a center voltage level control signal generation circuit that generates a center voltage level control signal to control a center voltage level of the differential signal. The differential signal output circuit outputs the differential signal having the center voltage level based on the center voltage level control signal and an output level based on the amplitude control signal. A forming region of the center voltage level control signal generation circuit and a forming region of the differential signal output circuit are provided near each other on a semiconductor substrate where operation characteristics of transistors formed respectively in the two forming regions become equal.

Abstract: A differential signal output circuit is provided in a semiconductor chip, wherein resistances are inserted between a pair of output terminals of a pair of signal lines and pads to be connected to the respective output terminals. The resistances are provided inside the semiconductor chip. In particular, the resistance components are inserted between the inductance components of bonding wires and lead frames and capacitance components such as wiring capacitances.

Abstract: A semiconductor device includes a differential signal output circuit that outputs a differential signal, an amplitude control signal generation circuit that generates an amplitude control signal to control an amplitude of the differential signal for the differential signal output circuit, and a center voltage level control signal generation circuit that generates a center voltage level control signal to control a center voltage level of the differential signal. The differential signal output circuit outputs the differential signal having the center voltage level based on the center voltage level control signal and an output level based on the amplitude control signal. A forming region of the center voltage level control signal generation circuit and a forming region of the differential signal output circuit are provided near each other on a semiconductor substrate where operation characteristics of transistors formed respectively in the two forming regions become equal.

Abstract: The present invention is intended to provide a semiconductor memory circuit that can store analog and many-valued data at high speed and with a high degree of accuracy.