Abstract: A resin composition contains at least (a) a polyimide resin having a specific structure and (b) a crosslinker including a fluorene group. The resin composition is capable of bonding an electronic circuit formation substrate or a semiconductor circuit formation substrate and a support substrate together. The resin composition has excellent heat resistance during bonding of an electronic circuit formation substrate or semiconductor circuit formation substrate having a thickness of 1 ?m or more and 100 ?m or less. The resin composition has steady adhesive force through the process of manufacturing an electronic component, a semiconductor device or the like, and can be peeled off under mild conditions at room temperature after the manufacturing process. An adhesive, a resin layer, a laminated film, and a processed wafer containing the resin composition, as well as a method for manufacturing an electronic component or a semiconductor device using these are also disclosed.

Abstract: A resin composition contains at least (a) a polyimide resin having a specific structure and (b) a crosslinker including a fluorene group. The resin composition is capable of bonding an electronic circuit formation substrate or a semiconductor circuit formation substrate and a support substrate together. The resin composition has excellent heat resistance during bonding of an electronic circuit formation substrate or semiconductor circuit formation substrate having a thickness of 1 ?m or more and 100 ?m or less. The resin composition has steady adhesive force through the process of manufacturing an electronic component, a semiconductor device or the like, and can be peeled off under mild conditions at room temperature after the manufacturing process. An adhesive, a resin layer, a laminated film, and a processed wafer containing the resin composition, as well as a method for manufacturing an electronic component or a semiconductor device using these are also disclosed.

Abstract: The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.

Abstract: Provided is a resin composition including: (A1) an alkali-soluble resin having a specific structural unit; (A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and (B) a photosensitizer, in which the amount of the resin (A2) is 310 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1).

Abstract: To provide a photosensitive resin composition which is capable of forming a pattern with high resolution and obtaining a cured film having excellent heat resistance and cracking resistance, and is also alkali developable; and a method capable of shortening the step required to remove a cured film of the composition after formation of an impurity region on a semiconductor substrate; and a method for manufacturing a semiconductor device using the same. Disclosed is a photosensitive resin composition including a polysiloxane (A).

Abstract: The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.

Abstract: The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.

Abstract: The present invention provides a laminate film for temporary bonding which is excellent in heat resistance, capable of providing a flat film even at the periphery of a substrate, and capable of making a semiconductor circuit formation substrate and a support substrate or a support film layer adhere to each other with one type of adhesive, and which can be peeled off at room temperature under mild conditions. The present invention provides a laminate film for temporary bonding, including at least three layers of (A) a protective film layer, (B) an adhesive layer, and (C) a support film layer, wherein the adhesive layer (B) contains at least a siloxane polymer represented by a specific general formula or a compound represented by a specific general formula.

Abstract: Provided is a resin composition including: (A1) an alkali-soluble resin having a specific structural unit; (A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and (B) a photosensitizer, in which the amount of the resin (A2) is 310 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1).

Abstract: To provide a photosensitive resin composition which is capable of forming a pattern with high resolution and obtaining a cured film having excellent heat resistance and cracking resistance, and is also alkali developable; and a method capable of shortening the step required to remove a cured film of the composition after formation of an impurity region on a semiconductor substrate; and a method for manufacturing a semiconductor device using the same. Disclosed is a photosensitive resin composition including a polysiloxane (A), wherein the polysiloxane (A) is a polysiloxane represented by the general formula (1), and wherein (X) and (Y) are represented by the general formulas (4) to (6). 7.5?(X)?75??(4) 2.5?(Y)?40??(5) 1.

Abstract: Disclosed is a method for manufacturing a semiconductor device, including a step of yielding a pattern 2a of a polysiloxane-containing composition over a substrate 1, and a step of forming an ion impurity region 6 in the substrate, wherein, after the step of forming an ion impurity region, the method further includes a step of firing the pattern at a temperature of 300 to 1,500° C. This method makes it possible that after the formation of the ion impurity region in the semiconductor substrate, the pattern 2a of the polysiloxane-containing composition is easily removed without leaving any residual. Thus, the yield in the production of a semiconductor device can be improved and the tact time can be shortened.

Abstract: The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.

Abstract: Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (A) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process.

Abstract: The present invention provides a photosensitive resin composition comprising an unsaturated group-containing resin (D), a (meth)acrylic compound (E) having a specific structure, a silane compound (G) having a substituent selected from the group consisting of an amino group, an amide group, a ureido group, a ketimine group, and an isocyanate group, and a photo-polymerization initiator (F), the unsaturated group-containing resin (D) being obtained by adding an epoxy group-containing unsaturated compound (C) to some acid radicals of a copolymer obtained by copolymerizing a (meth)acrylic ester (A) with an unsaturated group- and acid-containing compound (B).

Abstract: The present invention provides a photosensitive resin composition comprising an unsaturated group-containing resin (D), a (meth)acrylic compound (E) having a specific structure, a silane compound (G) having a substituent selected from the group consisting of an amino group, an amide group, a ureido group, a ketimine group, and an isocyanate group, and a photo-polymerization initiator (F), the unsaturated group-containing resin (D) being obtained by adding an epoxy group-containing unsaturated compound (C) to some acid radicals of a copolymer obtained by copolymerizing a (meth)acrylic ester (A) with an unsaturated group- and acid-containing compound (B).

Abstract: To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.

Abstract: Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (A) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process.

Abstract: Disclosed is a positive photosensitive resin composition which contains a polisiloxane, a naphthoquinone diazide compound, and a solvent. The positive photosensitive resin composition is characterized in that the polysiloxane has: an organosilane-derived structure represented by the general formula (1): at a content ration of 20-80% inclusive of Si relative to the overall number of moles of Si atoms in the polysiloxane; and an organosilane-derived structure represented by general formula (2): The positive photosensitive resin composition exhibits high heat resistance, high transparency, and enables high sensitivity, high resolution patterning. The positive photosensitive resin composition can be used to form cured films such as planarization films used in TFT substrates, interlayer insulating films, core materials and cladding materials, and can be used in elements having cured films such as display elements, semiconductor elements, solid-state imaging elements, and optical waveguide elements.

Abstract: To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.

Abstract: A positive photosensitive siloxane composition having high photosensitivity and having such properties as high heat resistance, high transparency and low dielectric constant may be used to form a planarization film for a TFT substrate, an interlayer dielectrics or a core or cladding of an optical waveguide. The positive photosensitive siloxane composition includes a siloxane polymer, quinonediazide compound and solvent, and a cured film formed of the composition has a light transmittance per 3 ?m of film thickness at a wavelength of 400 nm of 95% or more.