Abstract: A method of producing a raw material solution for a film-forming according to a Mist CVD method including a temperature at which a solute containing a metallic element is mixed with a solvent and stirred is 30° C. or higher, and a method of film-forming according to the Mist CVD method using a raw material solution produced by the method of producing the raw material solution.

Abstract: A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming an emitter layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the emitter layer; removing the diffusion mask in a pattern; forming a base layer on the portion where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.

Abstract: A solar cell including: a semiconductor substrate having a first conductivity type; a first conductivity type layer having a conductivity type equal to the first conductivity type and a second conductivity type layer having a second conductivity type opposite to the first conductivity type, which are located on a first main surface of the substrate; a first collecting electrode on the first conductivity type layer located on the first main surface; and a second collecting electrode on the second conductivity type layer located on the first main surface. In the solar cell, a second conductivity type layer having the second conductivity type is formed on a side surface of the semiconductor substrate and continuously from the second conductivity type layer located on the first main surface. Consequently, it is possible to provide a solar cell having excellent conversion efficiency and being capable of efficiently collecting carriers.

Abstract: A film-forming method in which film-formation is performed by heat-treating a mist of a raw material solution, the method including: dissolving metal gallium in an acidic solution containing at least one of hydrobromic acid and hydroiodic acid to prepare the raw material solution having a concentration of a metal impurity of less than 2%; and atomizing the raw material solution into a mist, and performing film-forming. This method can provide a film-forming method that can form a film having good crystallinity at a high film-forming rate.

Abstract: A drying method of a polyimide paste which can maintain a printing shape while maintaining productivity includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes cured polyimide by being cured as a result of being dried and heated, the drying method including a step of applying the polyimide paste to a surface of a base material, a step of applying a solvent including a polar material to a surface of the base material at least at a portion where the polyimide paste is applied, and a step of, after applying the solvent including the polar material, drying the polyimide paste and the solvent including the polar material.

Abstract: A method for producing a gallium oxide semiconductor film by a mist CVD method, including, a mist-forming step in which a raw material solution containing gallium is misted in a mist-forming unit to generate mist, a carrier gas supply step of supplying a carrier gas for transferring the mist to the mist-forming unit, a transferring step of transferring the mist from the mist-forming unit to a film forming chamber using the carrier gas via a supply pipe connecting the mist-forming unit and the film forming chamber, a rectification step of rectifying flow of the mist and the carrier gas supplied to a surface of a substrate in the film forming chamber so as to flow along the surface of the substrate, a film forming step of heat-treating the rectified mist to form a film on the substrate, and an exhaust step of exhausting waste gas upward from the substrate.

Abstract: A method for producing a doping raw-material solution for film formation includes a step of firstly mixing a solute including a halogen-containing organic dopant compound or a dopant halide with a first solvent, but not with other solvents to prepare a dopant precursor solution separately from a film-forming raw material, where an acidic solvent is used as the first solvent. A method for producing a doping raw-material solution for film formation enables stable formation of a high-quality thin film having excellent electric characteristics.

Abstract: An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.

Abstract: A back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5×1018 atoms/cm3 are disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum.

Abstract: Disclosed is a firing furnace for firing an electrode of a solar cell element, which is provided with: a transfer member, which transfers a substrate having a conductive paste applied thereto; a heating section, which heats the substrate and fires the conductive paste; and a cooling section, which cools the heated substrate. The furnace is also provided with a heating means for heating the transfer member. Specifically, at the time of firing the electrode paste using the wire-type firing furnace, since a wire is fired at a temperature substantially equivalent to the ambient temperature of the heating section, deterioration of yield due to having the electrode damaged by a deposited material of the metal component of the conductive paste is suppressed, said deposited material being deposited on the wire, and the wire-type firing furnace can be continuously used.

Abstract: A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film. This provides a method for industrially advantageously producing a crystalline oxide semiconductor film, for example, a crystalline oxide semiconductor film useful for a semiconductor device (particularly a vertical element).

Abstract: A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.

Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.

Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Abstract: The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.

Abstract: An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode . The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.

Abstract: A laminated structure includes a crystalline substrate and a crystalline oxide film containing gallium as a main component and having a ?-gallia structure, wherein the crystalline substrate is a crystalline substrate containing lithium tantalate as a main component. This provides an inexpensive laminated structure having a thermally stable crystalline oxide film.

Abstract: An object of the present invention is to provide, at a low cost, a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.