Abstract: A booster circuit comprises a p-MOS transistor, two n-MOS transistors and a bootstrap capacitor. In the booster circuit, an output signal is charged up to a potential of a power supply through the n-MOS transistors, then is pushed up to a potential higher than that of the power supply by a bootstrap capacitor through the p-MOS transistors. In such a structure, the p-MOS transistor operates as a switching element when pushing up the output signal, so that operation speed is much higher than a conventional booster circuit in which n-MOS transistors are used as switching elements.

Abstract: A dynamic memory circuit which can operate with a reduced amount of current noise and without destruction of stored data. The memory circuit includes dynamic memory cells necessitating restoring operation, a read circuit for performing a read-out operation in an active state and a restore circuit for performing a restore operation in a reset state following the active state.

Abstract: A dynamic memory circuit which can operate at a high speed and with a reduced amount of current noise is disclosed. The memory circuit includes dynamic type memory cells which necessitate restoring operation for rewritting read out data thereto, a read circuit for performing a read out operation in response to an active level of an externally supplied control signal and a restore circuit for performing the restoring operation in response to change of the externally supplied control signal to its inactive level.

Abstract: The semiconductor memory device according to the present invention comprises a plurality of memory cell arrays having a plurality of memory cells and a plurality of bit liens and word lines connected respectively thereto, and I/O lines which run in the direction of the word line and are connected with a given number of bit lines of the bit lines via a selection circuit, the bit lines being divided into a first and a second bit line groups of a given number of lines, the I/O lines having a first I/O line connected to a given number of lines in the first bit line group via the selection circuit and a second I/O line connected to a given number of lines in the second bit line group via the selection circuit, and the first and second I/O lines are provided to extend in opposite directions.

Abstract: A stabilized resin composition comprising a resin, a piperidine derivative represented by the formula (III) ##STR1## wherein R.sub.1 is a hydrogen atom or an alkyl group having 1 to 3 carbom atoms; R.sub.2 is a hydrogen atom or an alkyl group having from 1 to 2 carbon atoms; and R.sub.3 and R.sub.4 are each independently an alkyl group having 1 to 12 carbon atoms, a phenol-type antioxidant and a sulfur-containing antioxidant. The composition simultaneously meets heat resistance, oxidation resistance and light resistance requirements.

Abstract: A dynamic memory circuit which can operate at a high speed and with a reduced amount of noise is disclosed. The memory circuit includes word lines and a pair of dummy word lines arranged in rows, a plurality of bit lines pairs arranged in columns, a plurality of memory cells, dummy capacitors connected between the dummy word lines and the bit line pairs and a plurality of transfer gate pairs inserted between the bit line pairs and the sense amplifiers.

Abstract: Process for producing hydroxy-containing alkylated aromatic compounds by the liquid phase reaction of an aromatic compound having at least one hydroxyl group with an alkylating agent in the presence of a heteropoly acid and water.

Abstract: Process for producing 2,2,4-trimethyl-1,2-dihydroquinoline by reacting aniline with an acetone compound at 80.degree.-150.degree. C. in the presence of, as catalyst, both hydrogen fluoride and boron trifluoride.

Abstract: A dot drive circuit for a wire dot type printer including dot pins of a print head different in gaps with respect to a platen sets dot drive time intervals for each dot pin or for each dot pin group in accordance with the size of the gap.

Abstract: A semiconductor device comprises a first circuit section positioned in a center portion of the substrate, a second circuit section provided in the peripheral portion of the substrate, and first to third power supply main wiring layers on the substrate. The first wiring layer supplies a first voltage such as ground potential to the second circuit section. The second wiring layer supplies a second voltage such as Vcc potential to the second circuit section. The third wiring layer supplies the first voltage to the first circuit section. The device further comprises a MOS type capacitor having upper and lower electrodes. The upper electrode of the capacitor is connected to the second wiring layer, and the lower electrode of the capacitor is connected at its end parts to the first and third wiring layers such that both wiring layers are electrically connected each other. Such a device can decrease the surge current induced in the wiring layers by the capacitor.

Abstract: There is provided a 2,2,6,6-tetramethylpiperidine derivative represented by the formula (I), ##STR1## wherein R.sub.1 and R.sub.2 independently represent a hydrogen atom or methyl group, and R.sub.3 represents an alkylene group having one to four carbon atoms. A method for producing said derivatives is also provided.

Abstract: There are provided piperidine derivatives having the formula ##STR1## wherein R represents a hydrogen atom or a C.sub.1 -C.sub.3 group, and R.sup.2 and R.sup.3 represent a hydrogen atom or taken together, form ##STR2## There is also provided a method for producing the above compounds which comprises reacting a tricetonamine derivative represented by the formula ##STR3## wherein R has the same meaning as described above, or its salt with sorbitol.The subject piperdine derivatives are useful as stabilizers for preventing the deterioration of polymers by light.

Abstract: Process for producing hydroxy-containing alkylated aromatic compounds by the liquid phase reaction of an aromatic compound having at least one hydroxyl group with an alkylating agent in the presence of a heteropoly acid and water.