Abstract: In an image display device comprising a display part configured with a plurality of pixels and a peripheral integrated circuit which controls the display part, the display device is provided on a support substrate which has high durability for the impact and the bending, the pixel circuit is configured with an organic semiconductor TFT, the peripheral integrated circuit is configured with a low-temperature poly Si-TFT, this peripheral integrated circuit is provided on a support substrate of the display device being removed the support substrate when being manufactured, and the pixel circuit and the peripheral integrated circuit are connected with the same wire layer.

Abstract: Disclosed herewith an image display device capable of displaying high quality images and preferred for reducing the manufacturing cost. The image display device is provided with illuminating state controlling state for controlling the illuminating state or non-illuminating state and constant voltage supply for supplying a constant voltage to each pixel through a signal line when the illuminating state is selected for the pixel.

Abstract: There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed.

Abstract: A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.

Abstract: Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.

Abstract: A disclosed technology is a method for exposing a photo-sensitive SAM film, wherein a self-assembled-monolayer (photo-sensitive SAM film) having photo-sensitivity, exhibiting hydrophobicity before exposure, and exhibiting hydrophilicity after exposure is formed on a substrate, exposure is performed to the substrate in a state in which a surface of the substrate on which the film has been formed is dipped in liquid or in a state in which a light-sensitive surface of the substrate faces downward to be in contact with liquid, exposure light is ultraviolet light, visible light, or light with an exposure-wavelength of 350 nm or more to 800 nm or less, and the liquid is at least one of organic solvent containing an aromatic group and organic solvent of alcohols, ethers, or ketones.

Abstract: A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm?3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm?3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.

Abstract: An organic field-effect transistor has a gate insulating layer comprising a cured epoxy resin. The epoxy resin has a lower concentration of trapping centres compared with a conventional epoxy resin in which trapping centres are provided by hydroxyl (OH) groups. The lower concentration of trapping centres can be achieved by reducing the number of hydroxyl groups throughout the layer and/or by reducing the number of hydroxyl groups in a surface region.

Abstract: A wiring board with an electronic device comprising a plurality of trenches arranged in parallel on a substrate, a common trench communicating the plurality of trenches with each other at one of their ends on the substrate, a metal layer formed at the bottom of the plurality of trenches, and an electrode layer connected with the metal layer and formed on a bottom of the common trench, wherein the electrode layer on the bottom of the common trench constitutes a source electrode or a drain electrode of a field effect transistor, whereby the wiring board and an electronic circuit having a good fine wire pattern and a good narrow gap between the patterns using a coating material can be formed, and a reduction for a cost of an organic thin film electronic device and the electronic circuit can be attained since they can be realized through a development of a printing technique.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: The invention provides an image display device that has an especially satisfactory display quality for animated images, and sufficiently suppresses the irregularities of display quality among pixels. The image display device includes a light emitting drive means that drives a light emitting means, based on an analog display signal inputted to the pixels, and a light emitting control switch for controlling a light-on or light-off of the light emitting means on one end of the light emitting drive means in each pixel.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.

Abstract: The present invention provides a method of manufacturing a thin-film transistor device. This method enables improvement in performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device and also enables reduction of power consumption and reduction of manufacturing cost of the circuit. Further in the method, the number of manufacturing steps is decreased so that mass production and growth in size of thin film transistor devices are facilitated through a printing technique. In this method, electrodes forming n-type and p-type TFT and an organic semiconductor are made of the same material in both types of TFT by the solution-process and/or printable process method. A first polarizable thin-film 7 is formed on an interface between a gate insulator and a semiconductor, and also a second polarizable thin film 8 provided on an interface between source and drain electrodes 5 and a semiconductor film 9.

Abstract: An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

Abstract: The invention provides an image display device that has an especially satisfactory display quality for animated images, and sufficiently suppresses the irregularities of display quality among pixels. The image display device includes a light emitting drive means that drives a light emitting means, based on an analog display signal inputted to the pixels, and a light emitting control switch for controlling a light-on or light-off of the light emitting means on one end of the light emitting drive means in each pixel.

Abstract: A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

Abstract: A disclosed technology is a method for exposing a photo-sensitive SAM film, wherein a self-assembled-monolayer (photo-sensitive SAM film) having photo-sensitivity, exhibiting hydrophobicity before exposure, and exhibiting hydrophilicity after exposure is formed on a substrate, exposure is performed to the substrate in a state in which a surface of the substrate on which the film has been formed is dipped in liquid or in a state in which a light-sensitive surface of the substrate faces downward to be in contact with liquid, exposure light is ultraviolet light, visible light, or light with an exposure-wavelength of 350 nm or more to 800 nm or less, and the liquid is at least one of organic solvent containing an aromatic group and organic solvent of alcohols, ethers, or ketones.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.

Abstract: The invention provides an image display device that has an especially satisfactory display quality for animated images, and sufficiently suppresses the irregularities of display quality among pixels. The image display device includes a light emitting drive means that drives a light emitting means, based on an analog display signal inputted to the pixels, and a light emitting control switch for controlling a light-on or light-off of the light emitting means on one end of the light emitting drive means in each pixel.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.