Patents by Inventor Takeo Toba
Takeo Toba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180197850Abstract: A semiconductor integrated circuit device with a “PAD on I/O cell” structure in which a pad lead part is disposed almost in the center of an I/O part so as to reduce the chip layout area. In the I/O part, a transistor lies nearest to the periphery of the semiconductor chip. When seen in a plan view of the I/O part, a resistance lies above the transistor and a first and a second diode lie above the resistance; a second transistor lies above the diodes; and a logic block lies above the second transistor with a pad lead part, for example, formed in a metal wiring layer, therebetween. This permits the pad through the second transistor to be on the same node and therefore the pad lead part can be disposed almost in the center of the I/O part.Type: ApplicationFiled: March 12, 2018Publication date: July 12, 2018Inventors: Takeo TOBA, Kazuo TANAKA, Hiroyasu ISHIZUKA
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Patent number: 9947651Abstract: A semiconductor integrated circuit device with a “PAD on I/O cell” structure in which a pad lead part is disposed almost in the center of an I/O part so as to reduce the chip layout area. In the I/O part, a transistor lies nearest to the periphery of the semiconductor chip. When seen in a plan view of the I/O part, a resistance lies above the transistor and a first and a second diode lie above the resistance; a second transistor lies above the diodes; and a logic block lies above the second transistor with a pad lead part, for example, formed in a metal wiring layer, therebetween. This permits the pad through the second transistor to be on the same node and therefore the pad lead part can be disposed almost in the center of the I/O part.Type: GrantFiled: June 5, 2013Date of Patent: April 17, 2018Assignee: Renesas Electronics CorporationInventors: Takeo Toba, Kazuo Tanaka, Hiroyasu Ishizuka
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Publication number: 20160071572Abstract: An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.Type: ApplicationFiled: November 16, 2015Publication date: March 10, 2016Inventors: Natsuki IKEHATA, Kazuo TANAKA, Takeo TOBA, Masashi ARAKAWA
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Patent number: 9214217Abstract: An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.Type: GrantFiled: August 3, 2014Date of Patent: December 15, 2015Assignee: Renesas Electronics CorporationInventors: Natsuki Ikehata, Kazuo Tanaka, Takeo Toba, Masashi Arakawa
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Publication number: 20140334240Abstract: An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.Type: ApplicationFiled: August 3, 2014Publication date: November 13, 2014Inventors: Natsuki Ikehata, Kazuo Tanaka, Takeo Toba, Masashi Arakawa
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Patent number: 8803610Abstract: An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.Type: GrantFiled: August 20, 2012Date of Patent: August 12, 2014Assignee: Renesas Electronics CorporationInventors: Natsuki Ikehata, Kazuo Tanaka, Takeo Toba, Masashi Arakawa
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Publication number: 20130264647Abstract: A semiconductor integrated circuit device with a “PAD on I/O cell” structure in which a pad lead part is disposed almost in the center of an I/O part so as to reduce the chip layout area. In the I/O part, a transistor lies nearest to the periphery of the semiconductor chip. When seen in a plan view of the I/O part, a resistance lies above the transistor and a first and a second diode lie above the resistance; a second transistor lies above the diodes; and a logic block lies above the second transistor with a pad lead part, for example, formed in a metal wiring layer, therebetween. This permits the pad through the second transistor to be on the same node and therefore the pad lead part can be disposed almost in the center of the I/O part.Type: ApplicationFiled: June 5, 2013Publication date: October 10, 2013Inventors: Takeo TOBA, Kazuo TANAKA, Hiroyasu ISHIZUKA
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Publication number: 20130049864Abstract: An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.Type: ApplicationFiled: August 20, 2012Publication date: February 28, 2013Inventors: Natsuki IKEHATA, Kazuo Tanaka, Takeo Toba, Masashi Arakawa
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Patent number: 8013656Abstract: A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.Type: GrantFiled: November 12, 2010Date of Patent: September 6, 2011Assignee: Renesas Electronics CorporationInventors: Yusuko Kanno, Kazuo Tanaka, Shunsuke Toyoshima, Takeo Toba
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Publication number: 20110057708Abstract: A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.Type: ApplicationFiled: November 12, 2010Publication date: March 10, 2011Inventors: Yusuko KANNO, Kazuo TANAKA, Shunsuke TOYOSHIMA, Takeo TOBA
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Patent number: 7855590Abstract: A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.Type: GrantFiled: April 13, 2009Date of Patent: December 21, 2010Assignee: Renesas Electronics CorporationInventors: Yusuke Kanno, Kazuo Tanaka, Shunsuke Toyoshima, Takeo Toba
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Publication number: 20100155845Abstract: A semiconductor integrated circuit device with a “PAD on I/O cell” structure in which a pad lead part is disposed almost in the center of an I/O part so as to reduce the chip layout area. In the I/O part, a transistor lies nearest to the periphery of the semiconductor chip. When seen in a plan view of the I/O part, a resistance lies above the transistor and a first and a second diode lie above the resistance; a second transistor lies above the diodes; and a logic block lies above the second transistor with a pad lead part, for example, formed in a metal wiring layer, therebetween. This permits the pad through the second transistor to be on the same node and therefore the pad lead part can be disposed almost in the center of the I/O part.Type: ApplicationFiled: December 18, 2009Publication date: June 24, 2010Inventors: Takeo Toba, Kazuo Tanaka, Hiroyasu Ishizuka
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Publication number: 20090195292Abstract: A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.Type: ApplicationFiled: April 13, 2009Publication date: August 6, 2009Inventors: Yusuke Kanno, Kazuo Tanaka, Shunsuke Toyoshima, Takeo Toba
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Patent number: 7532054Abstract: A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.Type: GrantFiled: April 18, 2006Date of Patent: May 12, 2009Assignee: Renesas Technology Corp.Inventors: Yusuke Kanno, Kazuo Tanaka, Shunsuke Toyoshima, Takeo Toba
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Patent number: 7425845Abstract: The present invention provides a semiconductor integrated circuit having two kinds of input/output circuits realizing higher speed and higher packing density with rational configuration. The semiconductor integrated circuit has a first input/output circuit operating on a first power source voltage, an internal circuit operating on a second power source voltage lower than the first power source voltage, and a second input/output circuit operating on a third power source voltage lower than the first power source voltage. In an output circuit of the first input/output circuit, signal amplitude corresponding to the second power source voltage is converted to signal amplitude corresponding to the first power source voltage by a level shifter, and a P-channel MOSFET and an N-channel MOSFET constructing the output circuit are driven.Type: GrantFiled: June 14, 2006Date of Patent: September 16, 2008Assignee: Renesas Technology Corp.Inventors: Takeo Toba, Kazuo Tanaka, Shunsuke Toyoshima
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Publication number: 20070019493Abstract: The present invention provides a semiconductor integrated circuit having two kinds of input/output circuits realizing higher speed and higher packing density with rational configuration. The semiconductor integrated circuit has a first input/output circuit operating on a first power source voltage, an internal circuit operating on a second power source voltage lower than the first power source voltage, and a second input/output circuit operating on a third power source voltage lower than the first power source voltage. In an output circuit of the first input/output circuit, signal amplitude corresponding to the second power source voltage is converted to signal amplitude corresponding to the first power source voltage by a level shifter, and a P-channel MOSFET and an N-channel MOSFET constructing the output circuit are driven.Type: ApplicationFiled: June 14, 2006Publication date: January 25, 2007Inventors: Takeo Toba, Kazuo Tanaka, Shunsuke Toyoshima
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Publication number: 20060232307Abstract: A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.Type: ApplicationFiled: April 18, 2006Publication date: October 19, 2006Inventors: Yusuke Kanno, Kazuo Tanaka, Shunsuke Toyoshima, Takeo Toba