Abstract: An image forming apparatus includes an image forming part for forming a toner image on an image bearing body based on an image signal, and a density detection part for detecting a density of the toner image on the image bearing body, such that it is determined whether a normal image formed by the image forming part has a density detection area which should be detected, and if it is determined that the density detection area is present, image forming conditions are controlled based on a detection result of the density detection area.

Abstract: A frictionally press-bonded member includes a steel pipe, and a stab. The steel pipe has opposite ends. The stab is frictionally press-bonded to at least one of the opposite ends of the steel pipe. The steel pipe is subjected to a normalizing treatment before being frictionally press-bonded to the stab.

Abstract: An image forming apparatus that can realize an image having adequate image quality, density and color, without provoking excessive consumption of a developer and reduction in productivity. Image formation is performed by forming a latent image on an image carrier based on image information, then developing and transferring the latent image. An image for adjustment on a portion is formed other than a portion on which the latent image is formed on the image carrier. The density of the image for adjustment is detected. Image density is adjusted based on the density of the detected image for adjustment. Image formation control is executed whereby density is adjusted when an image is formed. A printing rate that indicates the percentage of the image formation to a sheet used for image formation is calculated. When the printing rate is determined to be within a set range, the image formation control is executed at a set frequency.

Abstract: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.

Abstract: An image forming system includes an image forming unit which forms an image as a toner image on a printing medium, a first fixing unit which fixes, on the printing medium, the toner image formed by the image forming unit, a second fixing unit arranged at a position different from the first fixing unit and used when a larger amount of heat is necessary for fixing the toner image on the printing medium, and a changing unit which changes the sequence of image formation by the image forming unit when the second fixing unit is used during image formation.

Abstract: A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.

Abstract: A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on the second surface of the element; and an insulation film covers a part of the first electrode, the first surface of the element and a part of a sidewall of the element. The above semiconductor device has small dimensions and a high breakdown voltage.

Abstract: A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

Abstract: A manufacturing method of a diode includes: forming a P type semiconductor film on a N type semiconductor layer with a crystal growth method; forming a first metallic film on the P type semiconductor film so that the first metallic film contacts the P type semiconductor film with an ohmic contact; forming a mask having an opening on the first metallic film; etching a part of the first metallic film and a part of the P type semiconductor film via the opening so that a part of the N type semiconductor layer is exposed; and forming a second metallic film on the part of the N type semiconductor layer so that the second metallic film contacts the N type semiconductor layer with a Schottky contact.

Abstract: A diode includes the following: an n type semiconductor region; a p type semiconductor region provided in a part of a front face of the n type semiconductor region; an anode electrode (front face electrode) which adjoins a front face of the n type semiconductor region and a front face of the p type semiconductor region while at least forming a Schottky junction on a front face of the n type semiconductor region; and an insulating region which has a right-hand side (first side) and a left-hand side (second side) adjacent to the n type semiconductor region, the right-hand side facing a second n type semiconductor region which is located below the Schottky junction, the left-hand side facing a first n type semiconductor region which is located below a pn junction between the n type semiconductor region and the p type semiconductor region.

Abstract: A constant velocity universal joint is provided, having a hollow outer joint member, an inner joint member, an outer roller including a cylindrical surface, an inner roller including a concave sphere, and plural leg shafts each including a convex sphere formed in a tip portion and engaging with the concave sphere, where the cylindrical surface of the outer roller satisfies the following: W1>PCR (1?cos ?)/2+?3R3+?2R1 W2>3PCR (1?cos ?)/2??3R3+?2R1, where W1 indicates a length of the cylindrical surface from a center of the leg shaft and an intersection of the cylindrical surface and an upper side taper portion of the outer roller, W2 indicates a length of the cylindrical surface from the center of the leg shaft and an intersection of the cylindrical surface and a lower side taper portion of the outer roller, and ? indicates a maximum joint angle.

Abstract: A constant velocity universal joint is provided, having a hollow outer joint member, an inner joint member, an outer roller including a cylindrical surface, an inner roller including a concave sphere, and plural leg shafts each including a convex sphere formed in a tip portion and engaging with the concave sphere, where the cylindrical surface of the outer roller satisfies the following: W1>PCR(1?cos ?)/2+?3R3+?2R1 W2>3PCR(1?cos ?)/2??3R3+?2R1, where W1 indicates a length of the cylindrical surface from a center of the leg shaft and an intersection of the cylindrical surface and an upper side taper portion of the outer roller, W2 indicates a length of the cylindrical surface from the center of the leg shaft and an intersection of the cylindrical surface and a lower side taper portion of the outer roller, and ? indicates a maximum joint angle.

Abstract: It is determined whether a low density area in which pixels having density less than a predetermined density exist in succession is included in an image signal or not, and if the low density area exists, an image is formed by irradiating the laser light in a first condition for a pixel to be interested in each pixel area within the low density area and irradiating the laser light in a second condition being different from the first condition for other pixels in the pixel area. In this way, it is possible to improve reproducibility of a highlight area in a high resolution image and improve reproducibility of characters and line images or the like.

Abstract: It is determined whether a low density area in which pixels having density less than a predetermined density exist in succession is included in an image signal or not, and if the low density area exists, an image is formed by irradiating the laser light in a first condition for a pixel to be interested in each pixel area within the low density area and irradiating the laser light in a second condition being different from the first condition for other pixels in the pixel area. In this way, it is possible to improve reproducibility of a highlight area in a high resolution image and improve reproducibility of characters and line images or the like.

Abstract: A propeller shaft having high wear resistance is provided. The propeller shaft has a spline shaft and a spline sleeve meshing with each other, and a DLC coating is applied to any one of the spline shaft and the spline sleeve. The DLC coating has surface roughness Ra of 0.5 ?m or smaller.

Abstract: A power distribution apparatus of high reliability and long life and that can be reduced in size. A differential gear identified as a power transmission mechanism includes a drive shaft, a diff case provided with an opening that opens towards the drive shaft, constant velocity universal joints connected to the drive shaft, and side gears connected to drive shafts via the constant velocity universal joints. Outer races of the constant velocity universal joints are formed at the end of drive shafts. Inner races of the constant velocity universal joints are formed at side gears. The outer races are arranged so as to block an opening.

Abstract: A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive type layers are separated from each other and contact the schottky electrode. A size and an impurity concentration of the second conductive type layers and a size and an impurity concentration of a portion of the drift layer sandwiched between the second conductive type layers are determined so that a charge quantity of the second conductive type layers is equal to a charge quantity of the portion. Hereby, the pressure-proof JBS and low resistivity second conductive type layers arranged on a surface of the drift layer to provide a PN diode, can be obtained.

Abstract: A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN diodes. Each second conductivity type layer has a radial width with respect to a center of a contact region between the Schottky electrode and the drift layer. A radial width of one of the second conductivity type layers is smaller than that of another one of the second conductivity type layers, which is disposed closer to the center of the contact region than the one of the second conductivity type layers.

Abstract: A semiconductor device having a junction barrier Schottky diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening of the insulation film and an ohmic electrode on the substrate; a terminal structure having a RESURF layer surrounding the cell region; and multiple second conductive type layers on an inner side of the RESURF layer. The second conductive type layers and the drift layer provide a PN diode. The Schottky electrode includes a first Schottky electrode contacting the second conductive type layers with ohmic contact and a second Schottky electrode contacting the drift layer with Schottky contact.

Abstract: A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.