Abstract: A MOSFET used in a power conversion circuit having a reactor, a power source, the MOSFET, and a rectifier element, includes a semiconductor base substrate with a super junction structure formed of an n-type column region and a p-type column region. A total amount of a dopant in the n-type column region is higher than a total amount of a dopant in the p-type column region. The MOSFET is configured to be operated during a period from a point of time when a drain current starts to decrease to a point of time when the drain current becomes 0 for the first time in response to turning off of the MOSFET such that a first period during which the drain current decreases, a second period during which the drain current increases, and a third period during which the drain current decreases again appear in this order.

Abstract: A MOSFET used in a power conversion circuit including a reactor, a power source, the MOSFET, and a rectifier element, includes a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure, the n-type column region and the p-type column region are formed such that a total amount of a dopant in the p-type column region is set higher than a total amount of a dopant in the n-type column region, and the MOSFET is configured to be operated in response to turning on of the MOSFET such that at a center of the n-type column region as viewed in a plan view, a low electric field region having lower field intensity than areas of the n-type column region other than the center of the n-type column region appears.

Abstract: A MOSFET includes a semiconductor base substrate where a super junction structure is formed of an n-type column region and a p-type column region. A total amount of a dopant in the n-type column region is set to a value greater than a total amount of a dopant in the p-type column region. The MOSFET is configured to be operated during a period from a point of time when a drain current starts to decrease to a point of time when the drain current becomes 0 for the first time in response to turning off of the MOSFET such that a first period during which the drain current is decreased, a second period during which the drain current is increased or the drain current becomes constant, and a third period during which the drain current is decreased again occur in this order.

Abstract: A method for producing a stretched film including the steps of: stretching a long-length multilayer film (D) including a pre-stretch film (A) formed of a thermoplastic resin, a shrinkable film (B) having a shrinkage ratio in a lengthwise direction of the film under conditions of 140° C. and 60 seconds in the air of 10% or more and 40% or less, a shrinkage ratio in the widthwise direction thereof of 5% or less, and an adhesion layer (C) bonding the pre-stretch film (A) to the shrinkable film (B), at a stretching ratio of less than 1.5 times in a direction of 45°±15° with respect to the widthwise direction of the multilayer film (D), and peeling the shrinkable film (B) and the adhesion layer (C).

Abstract: A semiconductor device includes: a semiconductor base body where a second semiconductor layer is stacked on a first semiconductor layer, a trench is formed on a surface of the second semiconductor layer, and a third semiconductor layer which is formed of an epitaxial layer is formed in the inside of the trench; a first electrode; an interlayer insulation film which has a predetermined opening; and a second electrode, wherein metal is filled in the opening, the opening is disposed at a position avoiding a center portion of the third semiconductor layer, the second electrode is connected to the third semiconductor layer through the metal, and a surface of the center portion of the third semiconductor layer is covered by the interlayer insulation film.

Abstract: A power semiconductor device according to the present invention has a super junction structure, and includes a low-resistance semiconductor layer, an n?-type column region, p?-type column regions, a base region, trenches, gate insulation films, gate electrodes, source regions, interlayer insulation films, contact holes, metal plugs, p+-type diffusion regions, a source electrode and a gate pad electrode. An active element part includes an n?-type column region between a predetermined p?-type column region disposed closest to a gate pad part and a predetermined n?-type column region disposed closest to the gate pad part among the n?-type column regions which are in contact with the trenches. The present invention provides a power semiconductor device which can satisfy a demand for reduction in cost and downsizing of electronic equipment, can lower ON resistance while maintaining a high withstand voltage, and can possess a large breakdown resistance.

Abstract: A power semiconductor device of the present invention includes: a semiconductor base body which has a super junction structure formed of a plurality of first conductive-type columnar regions and a plurality of second conductive-type columnar regions; a plurality of trenches; gate insulation films; gate electrodes; an interlayer insulation film; contact holes formed such that two or more contact holes are formed between two trenches disposed adjacently to each other; metal plugs formed by filling the inside of the contact holes with metal; and an electrode, wherein a first conductive-type high concentration diffusion region is formed only between the trench and the metal plug disposed closest to the trench between each two trenches disposed adjacently to each other. According to the power semiconductor device of the present invention, it is possible to provide a power semiconductor device which satisfies a demand for reduction in cost and downsizing of electronic equipment, and has a large breakdown strength.

Abstract: A lengthy stretched film made of a thermoplastic resin, having, over the width direction of at least 1300 mm, a value of an orientation angle ? to a take-up direction in a range of 40° to 50° and fluctuation thereof of 1.0° or less, and a value of an average Nz coefficient in a range of 1.3 to 2.0 and fluctuation thereof of 0.10 or less. A lengthy circularly polarizing plate constituted by laminating the lengthy stretched film with a lengthy polarizer. A reflective display type liquid crystal display device provided with the circularly polarizing plate constituted by trimming the lengthy circularly polarizing plate to a desired size.

Abstract: A semiconductor device includes a drift layer 20 of a first conductivity type, a base layer 30 of a second conductivity type that is disposed on the drift layer 20 and is connected to a source electrode 90, and a column layer 50 of a second conductivity type that is connected to the source electrode 90 and penetrates the base layer 30 to extend into the drift layer 20.

Abstract: A power transfer device includes a hydraulic clutch capable of coupling and decoupling a secondary shaft of a CVT and axles to and from each other. A secondary pulley of the CVT includes a movable sheave movably supported by the secondary shaft, and a secondary piston that rotates together with the secondary shaft and that constitutes a second hydraulic actuator together with the movable sheave. The secondary piston of the second hydraulic actuator is used to define an engagement oil chamber of the hydraulic clutch.

Abstract: A semiconductor device includes a drift layer 20 of a first conductivity type, a base layer 30 of a second conductivity type that is disposed on the drift layer 20 and is connected to a source electrode 90, and a column layer 50 of a second conductivity type that is connected to the source electrode 90 and penetrates the base layer 30 to extend into the drift layer 20.

Abstract: A power transfer device includes a hydraulic clutch capable of coupling and decoupling a secondary shaft of a CVT and axles to and from each other. A secondary pulley of the CVT includes a movable sheave movably supported by the secondary shaft, and a secondary piston that rotates together with the secondary shaft and that constitutes a second hydraulic actuator together with the movable sheave. The secondary piston of the second hydraulic actuator is used to define an engagement oil chamber of the hydraulic clutch.

Abstract: A lengthy stretched film made of a thermoplastic resin, having, over the width direction of at least 1300 mm, a value of an orientation angle ? to a take-up direction in a range of 40° to 50° and fluctuation thereof of 1.0° or less, and a value of an average Nz coefficient in a range of 1.3 to 2.0 and fluctuation thereof of 0.10 or less. A lengthy circularly polarizing plate constituted by laminating the lengthy stretched film with a lengthy polarizer. A reflective display type liquid crystal display device provided with the circularly polarizing plate constituted by trimming the lengthy circularly polarizing plate to a desired size.

Abstract: A lengthy stretched film made of a thermoplastic resin, having, over the width direction of at least 1300 mm, a value of an orientation angle ? to a take-up direction in a range of 40° to 50° and fluctuation thereof of 1.0° or less, and a value of an average Nz coefficient in a range of 1.3 to 2.0 and fluctuation thereof of 0.10 or less. A lengthy circularly polarizing plate constituted by laminating the lengthy stretched film with a lengthy polarizer. A reflective display type liquid crystal display device provided with the circularly polarizing plate constituted by trimming the lengthy circularly polarizing plate to a desired size.

Abstract: A relay device for multicast communications. The relay device transmitting a user data packet, containing a content, in which to set a multicast address associated with the content, to a plurality of base stations belonging to a same zone in order to wirelessly transmit the content substantially simultaneously from the plurality of base stations, comprises a storing unit storing information indicative of a multicast group in which the mobile terminal participates together with information about the zone to which the base station performing wireless communications with the mobile terminal belongs, and generates a query packet for checking if the mobile terminal continues to participate in the multicast group stored therein, and transmits the user data packet containing the query packet to each of the base stations belonging to the same zone.

Abstract: A method for producing a stretched film comprising supplying a film composed of a thermoplastic resin along a direction D1 that is different from a taking-up direction D2 of a post-stretch film, and obliquely stretching the film while transferring the film with the edges thereof being gripped by gripping devices, to produce the stretched film having an orientation angle ? being within 45±5° with respect to the taking-up direction.

Abstract: A relay device for multicast communications. The relay device transmitting a multicast user data packet containing a content to base stations. The relay device stores information indicative of a multicast group, information indicative of the base station and information indicative of a zone to which the base station belongs (these items of information forming a set by being associated with each other), and determines, when receiving a LEAVE packet via the base station, whether transmit a query packet about a leave target multicast group by comparing the information indicative of the base station associated with the leave target multicast group and with information indicative of a base station relaying the received LEAVE packet, transmits the user data packet containing the query packet to each of the base stations belonging to the zone on the basis of a result of the determination.

Abstract: A bipolar semiconductor device includes a collector region that is an n-type low-resistance layer formed in one surface of a semiconductor crystal substrate, an n-type first high-resistance region on the collector region, a p-type base region on the first high-resistance region, an n-type low-resistance emitter region that is formed in another surface of the semiconductor crystal substrate, an n-type second high-resistance region between the emitter region and the base region so as to contact the emitter region, an n-type recombination suppressing region around the second high-resistance region so as to adjoin the second high-resistance region, and a p-type low-resistance base contact region which is provided so as to adjoin the recombination suppressing region, and which contacts the base region. Each of doping concentrations of the second high-resistance region and the recombination suppressing region is equal to or lower than 1×1017 cm?3.

Abstract: A method for producing a stretched film comprising supplying a film composed of a thermoplastic resin along a direction D1 that is different from a taking-up direction D2 of a post-stretch film, and obliquely stretching the film while transferring the film with the edges thereof being gripped by gripping devices, to produce the stretched film having an orientation angle ? being within 45±5° with respect to the taking-up direction. The stretching is performed so that an angle ?L (°) and a stretching speed V (mm/min) satisfy the following formulae (1) and (2): ??20°??L???3° . . . (1) 1000 mm/min<V<2500 mm/min . . .

Abstract: A communication apparatus includes a signal termination unit that includes a point data management unit and performs reception processing by receiving a signal including an address code for identifying a plurality of remote signaling points, and a plurality of call processing units that perform call processing for the plurality of the remote signaling points, the point data management unit manages call-processing point data, and wherein the signal termination unit, upon receipt of the signal, extracts a code of the non-masked range of the address code having a wild card, and recognizes the call processing unit number corresponding to the extracted code of the non-masked range by referring to the call-processing point data, and transmits to the call processing unit having the recognized call processing unit number the corresponding address code describing all the bits of the code set in the masked range and the code set in the non-masked range.