Abstract: An electron beam radiation apparatus having an electrostatic deflector capable of deflecting the electron beam with high accuracy and with a reduced displacement of the deflection position, is disclosed. The electrostatic deflector comprises a cylindrical holding member made of an insulating material and a plurality of electrodes separately fixed from each other inside of the holding member with at least a part of the surface thereof covered with a metal film. The holding member has a plurality of wedge-shaped fixing holes corresponding to the portions of the electrodes where they are fixed, respectively, the holes having a larger diameter on the outer peripheral surface than on the inner peripheral surface of the holding member. The electrodes are fixed on the holding member in such a manner that a molten joining metal is injected in the fixing holes with the electrodes arranged on the holding member and the joining metal is hardened in close contact with the metal film of the electrodes.

Abstract: An electron beam radiation apparatus having an electrostatic deflector capable of deflecting the electron beam with high accuracy and with a reduced displacement of the deflection position, is disclosed. The electrostatic deflector comprises a cylindrical holding member made of an insulating material and a plurality of electrodes separately fixed from each other inside of the holding member with at least a part of the surface thereof covered with a metal film. The holding member has a plurality of wedge-shaped fixing holes corresponding to the portions of the electrodes where they are fixed, respectively, the holes having a larger diameter on the outer peripheral surface than on the inner peripheral surface of the holding member. The electrodes are fixed on the holding member in such a manner that a molten joining metal is injected in the fixing holes with the electrodes arranged on the holding member and the joining metal is hardened in close contact with the metal film of the electrodes.

Abstract: An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, includes: a plurality of electron guns operable to generate the electron beams; a voltage controller, electrically connected to the electron guns, operable to apply different voltages to the electron guns; and a multi-axis electron lens operable to converge the electron beams independently of each other.

Abstract: An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens applied to the electron beams passing through the lens openings, respectively.

Abstract: An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams includes a multi-axis electron lens having a plurality of lens openings and a plurality of dummy openings. The lens openings allow the electron beams to pass therethrough, respectively, so as to converge the electron beams independently of each other. The dummy openings allow no electron beam to pass therethrough.

Abstract: An electron beam exposure apparatus for exposing a wafer of the present invention includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and an illumination switching unit operable to switch whether or not electron beams are to be incident on the wafer, for each electron beam independently of other electron beams.

Abstract: An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams includes a multi-axis electron lens having a plurality of lens openings operable to converge the electron beams independently of each other, the plurality of lens openings having different shapes.