Abstract: The present invention provides, as one aspect, a control system having sensor units and an electronic control unit. The electronic control unit includes a transmission controlling means which sets a signal line connected to the sensor unit, which is a destination of communication data, to a first state, sets the signal line connected to the sensor unit, which is not the destination, to a second state, and transmits the communication data to the destination via a communication line. The sensor unit includes a reception controlling means which determines a to state of the signal line connecting a sensor to the electronic control unit. When determining that the signal line of the sensor unit is in the first state, the reception controlling means receives the communication data and performs a predetermined process. When determining that the signal line is in the second state, the reception controlling means discards the communication data.

Abstract: A resist composition including a base resin component (A) and an acid-generator component (B) which generates acid upon exposure, the component (A) including a resin (A1) which has a structural unit (a0) represented by general formula (a-0) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; a represents an integer of 0 to 2; b represents an integer of 1 to 3; c represents an integer of 1 to 2; and a+b is an integer of 2 or more.

Abstract: A resist composition of the present invention is obtained by dissolving a resin component (A) that displays changed alkali solubility under action of acid and an acid generator component (B) that generates acid upon exposure in an organic solvent (S), wherein the organic solvent (S) includes an aromatic organic solvent (S1). According to the present invention, a resist composition and a method of forming a resist pattern, in which the level of LWR is reduced, can be provided.

Abstract: A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.

Abstract: A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.

Abstract: A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a1) represented by general formula (I) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R1? represents a hydrogen atom or a lower alkyl group; n represents an integer of 0 to 3; R1 represents a lower alkyl group, a fluorine atom, or a fluorinated lower alkyl group; and p represents an integer of 0 to 2.

Abstract: A positive resist composition including a resin component (A) and an acid generator component (B), the resin component (A) including a copolymer (A1) having a structural unit (a1) derived from an acrylate ester having a monocyclic or polycyclic group-containing acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing cyclic group, a structural unit (a3) derived from an acrylate ester having a hydroxyl group and/or cyano group-containing polycyclic group, and a structural unit (a4) represented by general formula (a4-1) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R? represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and f represents 0 or 1.

Abstract: There is provided a resist composition which includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) which generates an acid upon exposure, wherein the acid generator component (B) comprises an acid generator composed of a compound represented by the general formula (b1-2) shown below: (wherein, R41, R42, and R43 each independently represents an alkyl group, an acetyl group, an alkoxy group, a carboxy group, or a hydroxyalkyl group; n1 represents an integer of 0 to 3; n2 and n3 each independently represents an integer of 0 to 3; not all of n1, n2, and n3 are simultaneously 0; and X? represents an anion).

Abstract: A negative resist composition is used for either a first or second resist layer within a method of forming a resist pattern that includes the following steps (i) and (ii): (i) a step of forming the first resist layer on a substrate using a first resist composition, and then conducting selective exposure that forms a dense pattern in the first resist layer, and (ii) a step of forming the second resist layer on top of the first resist layer using a second resist composition, and then conducting selective exposure that forms a pattern in the second resist layer, wherein the negative resist composition is dissolved in an alcohol-based organic solvent, which functions as an organic solvent (D) that does not dissolve the first or second resist layer that contacts the resist layer formed from the negative resist composition.

Abstract: A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a0) represented by general formula (a0) (wherein R represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; Q represents a divalent linking group containing a nitrogen atom or an oxygen atom; R6 represents a lower alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; p represents an integer of 1 to 3; and q represents an integer of 0 to 2) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group exclusive of groups that exhibit aromaticity.

Abstract: The positive resist composition of the present invention is a polymer compound comprising at least one constituent unit (a1) selected from the group consisting of constituent units represented by the following general formulas (1) and (1)?, a constituent unit (a2) derived from an (?-lower alkyl)acrylate ester having a lactone-containing monocycle or a polycyclic group, and a constituent unit (a3) which is a constituent unit other than the constituent unit (a1) and the constituent unit (a2) and is derived from an (?-lower alkyl)acrylate ester which has an aliphatic cyclic group-containing non-acid dissociable dissolution inhibiting group and does not have a polar group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group having 20 or less carbon atoms, or a fluorinated lower alkyl group having 20 or less carbon atoms, R1 represents at most 20-membered cyclic group which may have a substituent, n represents 0 or an integer of 1 to 5, and m represents 0 or 1.

Abstract: The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Abstract: The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Abstract: A resist composition is disclosed that enables formation of a favorable resist pattern using a shrink process in which, following formation of the resist pattern, a treatment such as heating is used to narrow the resist pattern, and also disclosed are a laminate and a method for forming a resist pattern that use such a resist composition. This resist composition includes a resin component (A) that displays changed alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure. The component (A) contains structural units derived from a (meth)acrylate ester, and exhibits a glass transition temperature that falls within a range from 120 to 170° C.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A positive resist composition includes a resin component (A) and an acid generator component (B), wherein the component (A) is a copolymer that includes a structural unit (a1) derived from an (?-lower alkyl)acrylate ester that contains a monocyclic or polycyclic group-containing acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an (?-lower alkyl)acrylate ester that contains a lactone ring, a structural unit (a3) derived from an (?-lower alkyl)acrylate ester that contains a polar group-containing polycyclic group, and a structural unit (a4).

Abstract: A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A method for forming a resist pattern that includes the following steps (i) and (ii): (i) a step of forming a first resist layer on a substrate using a positive resist composition, and then conducting selective exposure, thereby forming a latent image of a dense pattern on the first resist layer, and (ii) a step of forming a second resist layer on top of the first resist layer using a negative resist composition, conducting selective exposure, and then developing the first resist layer and the second resist layer simultaneously, thereby exposing a portion of the latent image of the dense pattern, wherein as the negative resist composition, a negative resist composition dissolved in an organic solvent that does not dissolve the first resist layer is used.