Abstract: Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.

Abstract: Provided is a chemical-amplification positive-working resist composition capable of giving a resist pattern having excellent dry etching resistance and adhesion to the substrate with high pattern resolution and further having a good profile with improvement in the line edge roughness.

Abstract: The invention discloses a positive-working photoresist composition suitable for patterning light-exposure with light having a wavelength of 200 nm or shorter. The photoresist composition comprises a resinous compound capable of being imparted with increased solubility in an aqueous alkaline solution by interaction with an acid, a radiation-sensitive acid generating compound capable of generating an acid by irradiation with a radiation and an organic solvent, in which the resinous compound is a copolymer consisting of a combination of three types of specific (meth)acrylate units as the monomeric units. The patterned resist layer formed from the photoresist composition has an advantage in respect of decreased line slimming caused by electron beam irradiation in SEM inspection.

Abstract: Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.

Abstract: A photosensitive resin composition comprising a polymeric binder, an ethylenically unsaturated monomer and a photopolymerization initiator is disclosed. Also, a PS plate using the same is disclosed. The photopolymerization initiator comprises at least one compound selected from specific triazine compounds having a bromine atom on the substituted phenyl nucleus thereof and specific trihalomethyl-containing triazine compounds. The composition has high photosensitivity sufficient for exposure with an argon laser light and satisfactory developability. Additionally disclosed is a photosensitive resin composition comprising a polymeric binder, a monomer having an ethylenically unsaturated double bond and photopolymerization initiators including an acridine compound and a specific triazine compound. This second photosensitive resin composition has high sensitivity, high resolution and a wide development margin.

Abstract: An image formation method which comprises: (a) selectively exposing a photosensitive layer with a visible laser beam, (b) heating the exposed photosensitive layer at a temperature of from 36 to 48.degree. C. for 10 seconds to 3 minutes, and (c) developing the photosensitive layer.

Abstract: A photosensitive resin composition comprising a high polymer binder, a monomer, a photopolymerization initiator generating a radical on exposure to visible light of a wavelength of 400 to 700 nm such as triazine compounds, titanocene compounds, or acridine compounds, an optically-activated acid generating agent generating an acid on exposure to light of a wavelength of 200 to 380 nm, and a color former developing a color in the presence of an acid, and a method manufacturing a printing master plate comprising the steps of exposing a photosensitive printing plate which has a laminated layer made from a photosensitive resin composition thereon to visible light of wavelength in the range of 400 to 600 nm selectively in an imagewise configuration in order to harden the resin composition layer, developing the photosensitive printing plate, and further exposing the developed plate to light of a wavelength in the range 200 to 380 nm.