Abstract: A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.

Abstract: A pattern transfer method for transferring an uneven pattern onto a resist material is disclosed. The uneven pattern is formed in a template having a through-groove in a predetermined region. The resist material is applied to a substrate. The template is made to come into contact with the resist material. The resist material is filled to concave portion in the uneven pattern. The residual resist material leaked from a gap between the substrate and the template to the outside is sucked through the through-groove in a state where the template is in contact with the resist material. The resist material is made to cure in a state where the template is in contact with the resist material after the suction of the residual resist material. The template is separated from the cured resist material.

Abstract: A pattern forming method includes determining an amount of curable resin to be formed on a substrate, the curable resin having volatility, the amount of the curable resin being determined by a calculation considering volatile loss of the curable resin, the calculation being performed for each of a plurality of regions of the substrate, forming the curable resin having the determined amount on the substrate, the forming the curable resin being performed for each of the plurality of regions of the substrate, contacting the curable resin formed on the substrate with a template, the template including a pattern to be filled with the curable resin by the contacting, and curing the curable resin under a condition where the curable resin is in contact with the template.

Abstract: A pattern generation method of generating a three-dimensional pattern to be formed at a template for use in a method of forming a pattern by filling a resist material in the three-dimensional pattern of the template includes performing at least one of adjustment of a depth of the three-dimensional pattern and division of the three-dimensional pattern, based on a relationship between a filling time of the resist material and a dimension or shape of the three-dimensional pattern.

Abstract: A pattern size is arbitrarily adjusted with the use of the same template in imprint lithography.

Abstract: According to an aspect of the present invention, there is provided a template including: a template substrate; patterns for forming device patterns on a wafer substrate; and a charging monitoring pattern, a size of the charging monitoring pattern being equal to a largest pattern in the patterns for forming the device patterns.

Abstract: The first charged-beam optical system, which is one of the charged-beam optical systems, detects first marks provided on the chips formed in the wafer. The positions of the chips made in the wafer are calculated from position data about the first marks detected. The charged-beam optical systems detect the second mark provided on a stage. The position of the beam generated by each charged-beam optical system is adjusted in accordance with position data about the second mark detected. The charged-beam optical systems are used in accordance with the positions of the chips, to thereby draw a pattern.

Abstract: A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate.

Abstract: According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

Abstract: A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

Abstract: A charged particle beam drawing apparatus is disclosed, which includes a drawing section which draws a pattern on a resist film applied to a substrate to be processed on which a under-layer mark is formed, by a charged particle beam, a position computing section which computes a position of the under-layer mark and a position of a displacement measuring pattern drawn by the drawing section on the resist film using a correction coefficient, by scanning the under-layer mark and the displacement measuring pattern by a charged particle beam, a displacement amount computing section which computes an amount of displacement from the positions of the under-layer mark and the displacement measuring pattern, and a correcting section which corrects the correction coefficient according to the amount of displacement.

Abstract: A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.

Abstract: Natural numbers c, o, and a, and p-bit bit strings w1 and w2 are inputted. w1 and w2 are stored in an internal status storage unit and a generator storage unit respectively. The value g of p bits stored in the internal status storage unit is defined as a generator. The value of high order bits of the p bits stored in the internal status storage unit is defined as s. Then, gs represented by p bits is calculated, stored in the internal status storage unit, and high order o bits of the stored p bits are output. The series of processes are repeated a times, and a pseudo-random numbers are generated. Thus, pseudo-random numbers whose security has been mathematically guaranteed can be quickly generated.

Abstract: A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

Abstract: According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

Abstract: According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.

Abstract: Natural numbers c, o, and a, and p-bit bit strings w1 and w2 are inputted. w1 and w2 are stored in an internal status storage unit and a generator storage unit respectively. The value g of p bits stored in the internal status storage unit is defined as a generator. The value of high order bits of the p bits stored in the internal status storage unit is defined as s. Then, gs represented by p bits is calculated, stored in the internal status storage unit, and high order o bits of the stored p bits are output. The series of processes are repeated a times, and a pseudo-random numbers are generated. Thus, pseudo-random numbers whose security has been mathematically guaranteed can be quickly generated.

Abstract: In the dialog interface apparatus of the present invention, input speech is converted to an input semantic representation by a speech recognition unit, and a dialog management unit outputs an output semantic representation that corresponds to the input semantic representation, based on the input semantic representation obtained by the speech recognition unit. Having received the output semantic representation from the dialog management unit, a speech synthesis unit converts the output semantic representation to output speech identifying a specific dialog target and outputs the output speech. Further, the dialog management unit outputs to an innate operation execution unit an innate operation command that corresponds to the input semantic representation. The innate operation execution unit receives the innate operation command from the dialog management unit and executes an operation corresponding to the innate operation command.

Abstract: The system creates the aggregate of virtual particles in a cybernetic space on a computer and displays the shape of an object by means of a film covering its surface. When a user inputs a deforming designation, each particle moves and deforms the film. At this time the shape, sense of touch and counter force are output from the computer, and the user can deform the object with a feeling of working clay.

Abstract: Derivatives representing character string candidates are created from a list of examples of character data. The sorting attribute of the derivatives representing character string candidate is evaluated relating to each example of the character data and a derivatives representing character string is labeled to an internal node. At the same time, the sorting attribute of the derivatives representing character string selected is evaluated relating to each example of the character data to thereby successively sort the example of each character data and create a data sorting tree. New character data is sorted using the data sorting tree. On the other hand, a thesaurus of desired character data is automatically created as a word linked to the derivatives representing character string which is labeled to each internal node present on a path extending along the data sorting tree, or as a word linked to a negative of the derivative representing character string.