Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.

Abstract: An electrode catalyst support, capable of improving the power of a fuel cell, and an electrode catalyst and a solid polymer fuel cell using the same. Provided is carbon black wherein pores which are at most 6 nm in pore diameter have a cumulative pore volume of less than 0.25 cm3/g, a specific surface area by BET is 500 to 900 m2/g, and a volatile matter content is 1.0 to 10.0%. Also provided are an electrode catalyst for a fuel cell comprising a support which includes this carbon black, and a solid polymer fuel cell having the electrode catalyst.

Abstract: An aluminum-silicon carbide composite including flat-plate-shaped composited portion containing silicon carbide and an aluminum alloy, and aluminum layers containing an aluminum alloy provided on both plate surfaces of composited portion, wherein circuit board is mounted on one plate surface and the other plate surface is used as heat-dissipating surface, wherein: the heat-dissipating-surface-side plate surface of the composited portion has a convex curved shape; the heat-dissipating-surface-side aluminum layer has a convex curved shape; ratio (Ax/B) between the average (Ax) of the thicknesses at the centers on opposing short sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.91?Ax/B?1.00; and a ratio (Ay/B) between the average (Ay) of the thicknesses at the centers on opposing long sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.94?Ay/B?1.

Abstract: Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite. Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 ?m or more and 800 ?m or less, 20-30 mass % of silicon carbide having a particle diameter of 8 ?m or more and less than 80 ?m, and 5-10 mass % of silicon carbide having a particle diameter of less than 8 ?m.

Abstract: A heat-dissipating component, and a method for manufacturing the same, the component provided with a composited portion including a plate-shaped molded body containing silicon carbide, and hole-formation portions formed in a peripheral edge portion of the composited portion; through-holes being formed in the hole formation sections; the hole-formation portions containing inorganic fibers; the molded body and the inorganic fibers being impregnated with an aluminum-containing metal; and the hole-formation portions forming a part of the outer peripheral surface of the heat-dissipating component.

Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.

Abstract: The present invention provides an aluminum-diamond composite which combines high thermal conductivity and a coefficient of thermal expansion close to a semiconductor element, and in which the difference between the thicknesses of both surfaces is reduced so as to be suitable for use as a heat sink etc. for a semiconductor element.

Abstract: Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.

Abstract: A sheet-shaped aluminum-diamond composite containing a prescribed amount of a diamond powder wherein a first and second peak in a volumetric distribution of particle sizes occurs at 5-25 ?m and 55-195 ?m, and a ratio between an area of a volumetric distribution of particle sizes of 1-35 ?m and 45-205 ?m is from 1:9 to 4:6, the composite including an aluminum-containing metal as the balance, wherein the composite is covered, on both main surfaces, with a surface layer having prescribed film thicknesses and containing 80 vol % or more of an aluminum-containing metal, two or more Ni-containing layers are formed on at least the surface layer, the Ni-containing layers being such that a first and second layer from the surface layer side are amorphous Ni alloy layers having prescribed thicknesses, and an Au layer having a prescribed thickness is formed as an outermost layer.

Abstract: A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 ?m and a second peak at 55-195 ?m. A ratio between a volume distribution area at particle diameters of 1-35 ?m and a volume distribution area at particle diameters of 45-205 ?m is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 ?m, and the Au layer having a film thickness of 0.05 ?m or larger.

Abstract: A silicon carbide composite that is lightweight and has high thermal conductivity as well as a low thermal expansion coefficient close to that of a ceramic substrate, particularly a silicon carbide composite material suitable for heat dissipating components that are required to be particularly free of warping, such as heat sinks. A method for manufacturing a silicon carbide composite obtained by impregnating a porous silicon carbide molded body with a metal having aluminum as a main component, wherein the method for manufacturing a silicon carbide composite material is characterized in that the porous silicon carbide molded article is formed by a wet molding method, and preferably the wet molding method is a wet press method or is a wet casting method.

Abstract: A sheet-shaped aluminum-diamond composite containing a prescribed amount of a diamond powder wherein a first and second peak in a volumetric distribution of particle sizes occurs at 5-25 ?m and 55-195 ?m, and a ratio between an area of a volumetric distribution of particle sizes of 1-35 ?m and 45-205 ?m is from 1:9 to 4:6, the composite including an aluminum-containing metal as the balance, wherein the composite is covered, on both main surfaces, with a surface layer having prescribed film thicknesses and containing 80 vol % or more of an aluminum-containing metal, two or more Ni-containing layers are formed on at least the surface layer, the Ni-containing layers being such that a first and second layer from the surface layer side are amorphous Ni alloy layers having prescribed thicknesses, and an Au layer having a prescribed thickness is formed as an outermost layer.

Abstract: It is an object of the present invention to obtain a ceramic circuit substrate having high bonding strength, excellent heat cycle resistance, enhanced reliability of operation as an electronic device, and excellent heat dissipation properties. The present invention provides a ceramic circuit substrate in which metal plates, particularly copper plates, and both main surfaces of a ceramic substrate are bonded vial silver-copper brazing material layers. The silver-copper brazing material layers are formed from a silver-copper brazing material including i) 0.3-7.5 parts by mass of carbon fibers, and ii) 1.0-9.0 parts by mass of at least one active metal selected from titanium, zirconium, hafnium, niobium, tantalum, vanadium, and tin; with respect to iii) a total of 100 parts by mass of a) 75-98 parts by mass of silver powder and b) 2-25 parts by mass of copper powder. The carbon fibers having an average length of 15-400 ?m, an average diameter of 5-25 ?m and an average aspect ratio of 3-28.

Abstract: A composite is obtained by press-molding a mixed powder comprising 20-50 vol % of a metal powder and 50-80 vol % of a diamond powder for which a first peak in a volumetric distribution of particle size lies at 5-25 ?m, and a second peak lies at 55-195 ?m, and a ratio between the area of a volumetric distribution of particle sizes of 1-35 ?m and the area of a volumetric distribution of particle sizes of 45-205 ?m is from 1:9 to 4:6, thereby obtaining a composite having a high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, which is easy to mold into a prescribed shape.

Abstract: An aluminum-diamond composite that exhibits both high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, and that can suppress the occurrence of swelling, etc., of a surface metal layer portion even in actual use under a high load. An aluminum-diamond composite includes 65-80 vol % of a diamond powder having a roundness of at least 0.94, for which a first peak in a volumetric distribution of grain size lies at 5-25 ?m, and a second peak lies at 55-195 ?m, and a ratio between the area of the volumetric distribution of grain sizes of 1-35 ?m and the area of the volumetric distribution of grain sizes of 45-205 ?m is from 1:9 to 4:6; the balance being composed of a metal containing aluminum.

Abstract: Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

Abstract: An electrode catalyst support, capable of improving the power of a fuel cell, and an electrode catalyst and a solid polymer fuel cell using the same. Provided is carbon black wherein pores which are at most 6 nm in pore diameter have a cumulative pore volume of less than 0.25 cm3/g, a specific surface area by BET is 500 to 900 m2/g, and a volatile matter content is 1.0 to 10.0%. Also provided are an electrode catalyst for a fuel cell comprising a support which includes this carbon black, and a solid polymer fuel cell having the electrode catalyst.

Abstract: The present invention provides an aluminum-diamond composite which combines high thermal conductivity and a coefficient of thermal expansion close to a semiconductor clement, and in which the difference between the thicknesses of both surfaces is reduced so as to be suitable for use as a heat sink etc. for a semiconductor element.

Abstract: A composite production method includes impregnating a plate-shaped porous inorganic structure and a fibrous inorganic material with a metal while the fibrous inorganic material is arranged to be adjacent to the porous inorganic structure. In the composite structure, first and second phases are adjacent to each other by using a porous inorganic structure having a porous silicon carbide ceramic sintered body and the fibrous inorganic material, the first phase being a phase in which the porous silicon carbide ceramic sintered body is impregnated with the metal, the second phase being a phase in which the fibrous inorganic material is impregnated with the metal, a percentage of the porous silicon carbide ceramic sintered body in the first phase is 50 to 80 volume percent, and a percentage of the fibrous inorganic material in the second phase is 3 to 20 volume percent. A composite is produced by the method.