Abstract: [Problem to be Solved] Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite. [Solution] Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy.

Abstract: A silicon carbide composite that is lightweight and has high thermal conductivity as well as a low thermal expansion coefficient close to that of a ceramic substrate, particularly a silicon carbide composite material suitable for heat dissipating components that are required to be particularly free of warping, such as heat sinks. A method for manufacturing a silicon carbide composite obtained by impregnating a porous silicon carbide molded body with a metal having aluminum as a main component, wherein the method for manufacturing a silicon carbide composite material is characterized in that the porous silicon carbide molded article is formed by a wet molding method, and preferably the wet molding method is a wet press method or is a wet casting method.

Abstract: [Problem] To obtain a ceramic circuit board having superior crack-resistance with respect to ultrasonic bonding. [Solution] The abovementioned problem is solved by a ceramic circuit board characterized in that a metal circuit board is bonded to one surface of a ceramic substrate and a metal heat radiation plate is bonded to the other surface of the ceramic substrate, wherein the crystal grain size in the metal circuit board is at least 20 ?m and at most 70 ?m. This ceramic circuit board can be manufactured by arranging the metal circuit board on one surface of the ceramic substrate and arranging the metal heat radiation plate on the other surface of the ceramic substrate, and bonding in a vacuum of at most 1×10?3 Pa, at a bonding temperature of at least 780° C. and at most 850° C., for a retention time of at least 10 minutes and at most 60 minutes.

Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.

Abstract: A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 ?m and a second peak at 55-195 ?m. A ratio between a volume distribution area at particle diameters of 1-35 ?m and a volume distribution area at particle diameters of 45-205 ?m is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 ?m, and the Au layer having a film thickness of 0.05 ?m or larger.

Abstract: A composite production method includes impregnating a plate-shaped porous inorganic structure and a fibrous inorganic material with a metal while the fibrous inorganic material is arranged to be adjacent to the porous inorganic structure. In the composite structure, first and second phases are adjacent to each other by using a porous inorganic structure having a porous silicon carbide ceramic sintered body and the fibrous inorganic material, the first phase being a phase in which the porous silicon carbide ceramic sintered body is impregnated with the metal, the second phase being a phase in which the fibrous inorganic material is impregnated with the metal, a percentage of the porous silicon carbide ceramic sintered body in the first phase is 50 to 80 volume percent, and a percentage of the fibrous inorganic material in the second phase is 3 to 20 volume percent. A composite is produced by the method.

Abstract: An aluminum-silicon carbide composite including flat-plate-shaped composited portion containing silicon carbide and an aluminum alloy, and aluminum layers containing an aluminum alloy provided on both plate surfaces of composited portion, wherein circuit board is mounted on one plate surface and the other plate surface is used as heat-dissipating surface, wherein: the heat-dissipating-surface-side plate surface of the composited portion has a convex curved shape; the heat-dissipating-surface-side aluminum layer has a convex curved shape; ratio (Ax/B) between the average (Ax) of the thicknesses at the centers on opposing short sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.91?Ax/B?1.00; and a ratio (Ay/B) between the average (Ay) of the thicknesses at the centers on opposing long sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.94?Ay/B?1.

Abstract: [Problem] To obtain a ceramic circuit board having superior crack-resistance with respect to ultrasonic bonding. [Solution] The abovementioned problem is solved by a ceramic circuit board characterized in that a metal circuit board is bonded to one surface of a ceramic substrate and a metal heat radiation plate is bonded to the other surface of the ceramic substrate, wherein the crystal grain size in the metal circuit board is at least 20 ?m and at most 70 ?m. This ceramic circuit board can be manufactured by arranging the metal circuit board on one surface of the ceramic substrate and arranging the metal heat radiation plate on the other surface of the ceramic substrate, and bonding in a vacuum of at most 1×10?3 Pa, at a bonding temperature of at least 780° C. and at most 850° C., for a retention time of at least 10 minutes and at most 60 minutes.

Abstract: [Problem] To inexpensively provide a heat dissipating component that has thermal conductivity, as well as a low specific gravity, and a coefficient of thermal expansion close to that of a ceramic substrate, and furthermore having warpage so as to be able to be joined with good closeness of contact to a heat dissipating component or the like. [Solution] A silicon carbide composite which is a plate-shaped composite formed by impregnation of a porous silicon carbide molded article by a metal having aluminum as a main component, wherein the amount of warpage with respect to 10 cm of length of the main surface of the composite is 250 ?m or less, and the amount of warpage of a power module using the plate-shaped composite is 250 ?m or less; and a heat dissipating component using the same.

Abstract: A heat-dissipating component, and a method for manufacturing the same, the component provided with a composited portion including a plate-shaped molded body containing silicon carbide, and hole-formation portions formed in a peripheral edge portion of the composited portion; through-holes being formed in the hole formation sections; the hole-formation portions containing inorganic fibers; the molded body and the inorganic fibers being impregnated with an aluminum-containing metal; and the hole-formation portions forming a part of the outer peripheral surface of the heat-dissipating component.

Abstract: A composite is obtained by press-molding a mixed powder comprising 20-50 vol % of a metal powder and 50-80 vol % of a diamond powder for which a first peak in a volumetric distribution of particle size lies at 5-25 ?m, and a second peak lies at 55-195 ?m, and a ratio between the area of a volumetric distribution of particle sizes of 1-35 ?m and the area of a volumetric distribution of particle sizes of 45-205 ?m is from 1:9 to 4:6, thereby obtaining a composite having a high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, which is easy to mold into a prescribed shape.

Abstract: A semiconductor package having, stacked in the following order, a heat dissipating member, a joining layer and an insulation member, wherein the heat dissipating member has an aluminum-diamond composite containing diamond grains and a metal containing aluminum; and the joining layer that joins the heat dissipating member and the insulation member is formed using a composite material having silver oxide fine particles or organic-coated silver fine particles having an average particle size of at least 1 nm and at most 100 ?m.

Abstract: A semiconductor package includes a first metal plate having a first surface, a semiconductor chip including a first electrode and a second electrode, on the first surface, and a second metal plate on the semiconductor chip. The first metal plate has a first surface. The first electrode is connected to the first metal plate. The second metal plate includes a second surface and first and second side surfaces respectively on opposite sides of the second metal plate and connected to the second surface. The first side surface has a first recessed portion extending in a direction which crosses the first and second surfaces, and the second side surface has a second recessed portion extending in the second direction that crosses the first and second surfaces.

Abstract: An aluminum-diamond composite that exhibits both high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, and that can suppress the occurrence of swelling, etc., of a surface metal layer portion even in actual use under a high load. An aluminum-diamond composite includes 65-80 vol % of a diamond powder having a roundness of at least 0.94, for which a first peak in a volumetric distribution of grain size lies at 5-25 ?m, and a second peak lies at 55-195 ?m, and a ratio between the area of the volumetric distribution of grain sizes of 1-35 ?m and the area of the volumetric distribution of grain sizes of 45-205 ?m is from 1:9 to 4:6; the balance being composed of a metal containing aluminum.

Abstract: [Problem] To obtain a ceramic circuit substrate having high bonding strength, excellent heat cycle resistance, enhanced reliability of operation as an electronic device, and excellent heat dissipation properties. [Solution] A ceramic circuit substrate in which metal plates and both main surfaces of a ceramic substrate are bonded via silver-copper brazing material layers, the ceramic Cit quit substrate characterized in that the silver-copper brazing material layers are formed from a silver-copper brazing material including 0.3-7.5 parts by mass of carbon fibers and 1.0-9.0 parts by mass of at least one active metal selected from titanium, zirconium, hafnium, niobium, tantalum, vanadium, and tin with respect to 75-98 parts by mass of silver powder and 2-25 parts by mass of copper powder totaling 100 part by mass, with the carbon fibers having an average length of 15-400 ?m, an average diameter of 5-25 ?m and an average aspect ratio of 3-28.

Abstract: According to one embodiment, the connector includes a first portion and a second portion. The first portion is provided on the second surface of the semiconductor chip and bonded to the second electrode. The first portion has a bonding surface, a heat dissipation surface, and a side surface. The bonding surface is bonded to the second electrode of the semiconductor chip. The heat dissipation surface is opposite to the bonding surface and exposed from the resin. The side surface is tilted with respect to the bonding surface and the heat dissipation surface, and covered with the resin. The second portion protrudes from the first portion toward the second leadframe side. The second portion is thinner than the first portion and bonded to the second leadframe.

Abstract: According to one embodiment, the connector has a first portion and a second portion. The first portion is provided on the second surface of the semiconductor chip and bonded to the second electrode. The first portion has a first bonding surface bonded to the second electrode of the semiconductor chip, and a heat dissipation surface opposite the first bonding surface and exposed from the resin. The second portion protrudes from the first portion toward the second lead frame side and thinner than the first portion. The second portion has a second bonding surface bonded to the second lead frame and a level difference portion provided near the second bonding surface at the first portion side.

Abstract: A semiconductor device includes a semiconductor chip having an electrode, a connector having a chip contact surface, an interconnecting portion, and an external electrode terminal contact surface, the chip contact surface being electrically connected to the electrode, and a first connection material disposed between the chip contact surface and the electrode, the first connecting material having a surface area that is greater than a surface area of the chip contact surface.

Abstract: According to one embodiment, a connector frame includes a frame part, a first connector projected from the frame part and integrated with the frame part, and a second connector projected from the frame part and integrated with the frame part. The first connector includes a first portion and a second portion provided between the first portion and the frame part. The second portion is thinner than the first portion. The second connector is as thick as the second portion of the first connector.

Abstract: According to one embodiment, the connector has a first portion and a second portion. The first portion is provided on the second surface of the semiconductor chip and bonded to the second electrode. The first portion has a first bonding surface bonded to the second electrode of the semiconductor chip, and a heat dissipation surface opposite the first bonding surface and exposed from the resin. The second portion protrudes from the first portion toward the second lead frame side and thinner than the first portion. The second portion has a second bonding surface bonded to the second lead frame and a level difference portion provided near the second bonding surface at the first portion side.