Patents by Inventor Takeshi Nojiri

Takeshi Nojiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10312402
    Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: April 26, 2014
    Date of Patent: June 4, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi
  • Patent number: 9714262
    Abstract: A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR1)m. In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: July 25, 2017
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Yasushi Kurata, Tooru Tanaka, Akihiro Orita, Tsuyoshi Hayasaka, Takashi Hattori, Mieko Matsumura, Keiji Watanabe, Masatoshi Morishita, Hirotaka Hamamura
  • Patent number: 9608143
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: November 10, 2013
    Date of Patent: March 28, 2017
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Patent number: 9520529
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: November 9, 2013
    Date of Patent: December 13, 2016
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20160359078
    Abstract: A composition for forming an n-type diffusion layer, comprising glass particles that comprise a donor element, a dispersing medium, and an organometallic compound; a method of forming an n-type diffusion layer; a method of producing a semiconductor substrate with n-type diffusion layer; and a method of producing a photovoltaic cell element.
    Type: Application
    Filed: August 20, 2014
    Publication date: December 8, 2016
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Tetsuya SATO, Masato YOSHIDA, Takeshi NOJIRI, Yasushi KURATA, Toranosuke ASHIZAWA, Yoichi MACHII, Mitsunori IWAMURO, Akihiro ORITA, Mari SHIMIZU, Elichi SATOU
  • Patent number: 9406834
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Grant
    Filed: May 4, 2014
    Date of Patent: August 2, 2016
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Akihiro Orita, Masato Yoshida, Takeshi Nojiri, Yoichi Machii, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Toru Tanaka
  • Publication number: 20160211389
    Abstract: A composition for forming a passivation layer, including a resin and a compound represented by Formula (I): M(OR1)m. In Formula (I), M includes at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.
    Type: Application
    Filed: March 24, 2016
    Publication date: July 21, 2016
    Inventors: Tooru TANAKA, Masato YOSHIDA, Takeshi NOJIRI, Yasushi KURATA, Akihiro ORITA, Shuichiro ADACHI, Tsuyoshi HAYASAKA, Takashi HATTORI, Mieko MATSUMURA, Keiji WATANABE, Masatoshi MORISHITA, Hirotaka HAMAMURA
  • Patent number: 9390829
    Abstract: The paste composition for an electrode are constituted with copper-containing particles having a peak temperature of an exothermic peak showing a maximum area in the simultaneous ThermoGravimetry/Differential Thermal Analysis of 280° C. or higher, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for a photovoltaic cell electrode.
    Type: Grant
    Filed: January 25, 2011
    Date of Patent: July 12, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Shuuichirou Adachi, Keiko Kizawa, Takuya Aoyagi, Hiroki Yamamoto, Takashi Naito, Takahiko Kato
  • Publication number: 20160118513
    Abstract: A composition for forming an electrode includes a phosphorus-containing copper alloy particle, a tin-containing particle, a specific metal element M-containing particle, a glass particle, a solvent and a resin, in which M is at least one selected from the group consisting of Li, Be, Na, Mg, K, Ca, Rb, Sr, Cs, Ba, Fr, Ra, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Pd, Ag, Cd, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Al, Ga, Ge, In, Sb, Tl, Pb, Bi and Po.
    Type: Application
    Filed: May 13, 2013
    Publication date: April 28, 2016
    Inventors: Shuichiro ADACHI, Masato YOSHIDA, Takeshi NOJIRI, Yasushi KURATA, Yoshiaki KURIHARA, Takahiko KATO
  • Publication number: 20160035915
    Abstract: The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type imparity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, St, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu.
    Type: Application
    Filed: October 9, 2015
    Publication date: February 4, 2016
    Inventors: Tetsuya SATO, Masato YOSHIDA, Takeshi NOJIRI, Yoichi MACHll, Mitsunori IWAMURO, Akihiro ORITA
  • Patent number: 9240502
    Abstract: The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length:electrode height, of from 2:1 to 250:1.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: January 19, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Yoshiaki Kurihara, Takahiko Kato
  • Patent number: 9224517
    Abstract: A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: December 29, 2015
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Keiko Kizawa, Takuya Aoyagi, Hiroki Yamamoto, Takashi Naito, Takahiko Kato
  • Publication number: 20150303318
    Abstract: The invention provides a composition for forming a passivation film, including: an organic aluminum compound represented by General Formula (I); and a resin, wherein R1's each independently represent an alkyl group having 1 to 8 carbon atoms; n represents an integer of from 0 to 3; X2 and X3 each independently represent an oxygen atom or a methylene group; R2, R3 and R4 each independently represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.
    Type: Application
    Filed: December 28, 2012
    Publication date: October 22, 2015
    Inventors: Tooru Tanaka, Akihiro Orita, Takeshi Nojiri, Masato Yoshida
  • Publication number: 20150303317
    Abstract: The invention provides a method of producing a semiconductor substrate provided with a passivation film, the method including: forming an electrode on a semiconductor substrate; applying a composition for forming a semiconductor substrate passivation film onto a surface, on which the electrode is formed, of the semiconductor substrate to form a composition layer, the composition containing an organic aluminum compound; and heat-treating the composition layer to form a passivation film.
    Type: Application
    Filed: December 28, 2012
    Publication date: October 22, 2015
    Inventors: Tooru TANAKA, Akihiro ORITA, Takeshi NOJIRI, Masato YOSHIDA
  • Publication number: 20150214418
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 3, 2015
    Publication date: July 30, 2015
    Inventors: Yoichi MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20150214390
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 3, 2015
    Publication date: July 30, 2015
    Inventors: Yoichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuichiro ADACHI, Tetsuya SATO, Keiko KIZAWA
  • Publication number: 20150166582
    Abstract: A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR1)m. In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.
    Type: Application
    Filed: July 19, 2013
    Publication date: June 18, 2015
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Yasushi Kurata, Tooru Tanaka, Akihiro Orita, Tsuyoshi Hayasaka, Takashi Hattori, Mieko Matsumura, Keiji Watanabe, Masatoshi Morishita, Hirotaka Hamamura
  • Publication number: 20150099352
    Abstract: A composition for forming an n-type diffusion layer includes a glass powder containing P2O5, SiO2 and CaO and a dispersion medium. An n-type diffusion layer and a photovoltaic cell element having an n-type diffusion layer are produced by applying the composition for forming an n-type diffusion layer on a semiconductor substrate and by subjecting the substrate to a thermal diffusion treatment.
    Type: Application
    Filed: July 17, 2012
    Publication date: April 9, 2015
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Akihiro Orita, Shuichiro Adachi, Tetsuya Saito
  • Publication number: 20150017754
    Abstract: The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element.
    Type: Application
    Filed: January 10, 2013
    Publication date: January 15, 2015
    Inventors: Tetsuya Sato, Masato Yoshida, Takeshi Nojiri, Toranosuke Ashizawa, Yasushi Kurata, Yoichi Machii, Mitsunori Iwamuro, Akihiro Orita, Mari Shimizu
  • Publication number: 20140242741
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Application
    Filed: May 4, 2014
    Publication date: August 28, 2014
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Akihiro ORITA, Masato YOSHIDA, Takeshi NOJIRI, Yoichi MACHII, Mitsunori IWAMURO, Shuichiro ADACHI, Tetsuya SATO, Toru TANAKA