Abstract: A resin composition, containing: an elastomer; a methacrylic compound; and a thermal polymerization initiator. A cured product of the resin composition. A laminate having: a base material film; and a transparent resin layer disposed on the base material film, in which the transparent resin layer contains the resin composition or the cured product. A transparent antenna 110, having: a transparent base material 110a; and a mesh-shaped conductive member 110b disposed on the transparent base material 110a, in which the transparent base material 110a contains the cured product. An image display device 100 has the transparent antenna 110.

Abstract: A resin composition, containing: an elastomer; a (meth)acrylic compound; and a thermal polymerization initiator. A cured product of the resin composition. A laminate having: a base material film; and a transparent resin layer disposed on the base material film, in which the transparent resin layer contains the resin composition or the cured product. A transparent antenna 110, having: a transparent base material 110a; and a mesh-shaped conductive member 110b disposed on the transparent base material 110a, in which the transparent base material 110a contains the cured product. An image display device 100 has the transparent antenna 110.

Abstract: The light detection element includes a magnetic element and an optical waveguide. The magnetic element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The optical waveguide includes at least a core and a cladding covering at least a part of the core. Light that has propagated through the optical waveguide is applied to the magnetic element.

Abstract: The light detection element includes a magnetic element and an optical waveguide. The magnetic element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The optical waveguide includes at least a core and a cladding covering at least a part of the core. Light that has propagated through the optical waveguide is applied to the magnetic element.

Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR1)m. In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: A composition for forming an n-type diffusion layer, comprising glass particles that comprise a donor element, a dispersing medium, and an organometallic compound; a method of forming an n-type diffusion layer; a method of producing a semiconductor substrate with n-type diffusion layer; and a method of producing a photovoltaic cell element.

Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

Abstract: A composition for forming a passivation layer, including a resin and a compound represented by Formula (I): M(OR1)m. In Formula (I), M includes at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Abstract: The paste composition for an electrode are constituted with copper-containing particles having a peak temperature of an exothermic peak showing a maximum area in the simultaneous ThermoGravimetry/Differential Thermal Analysis of 280° C. or higher, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for a photovoltaic cell electrode.

Abstract: A composition for forming an electrode includes a phosphorus-containing copper alloy particle, a tin-containing particle, a specific metal element M-containing particle, a glass particle, a solvent and a resin, in which M is at least one selected from the group consisting of Li, Be, Na, Mg, K, Ca, Rb, Sr, Cs, Ba, Fr, Ra, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Pd, Ag, Cd, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Al, Ga, Ge, In, Sb, Tl, Pb, Bi and Po.

Abstract: The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type imparity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, St, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu.

Abstract: The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length:electrode height, of from 2:1 to 250:1.

Abstract: A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.

Abstract: The invention provides a composition for forming a passivation film, including: an organic aluminum compound represented by General Formula (I); and a resin, wherein R1's each independently represent an alkyl group having 1 to 8 carbon atoms; n represents an integer of from 0 to 3; X2 and X3 each independently represent an oxygen atom or a methylene group; R2, R3 and R4 each independently represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.

Abstract: The invention provides a method of producing a semiconductor substrate provided with a passivation film, the method including: forming an electrode on a semiconductor substrate; applying a composition for forming a semiconductor substrate passivation film onto a surface, on which the electrode is formed, of the semiconductor substrate to form a composition layer, the composition containing an organic aluminum compound; and heat-treating the composition layer to form a passivation film.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.