Abstract: An electro-optical device formed on a semiconductor substrate, includes: a first transistor controlling a current level according to a voltage between a gate and a source; a second transistor electrically connected between a data line and the gate of the first transistor; a third transistor electrically connected between the gate and a drain of the first transistor; and a light-emitting element emitting light at a luminance according to the current level, in which one of a source and a drain of the second transistor and one of a source and a drain of the third transistor are formed by a common diffusion layer.

Abstract: An intake manifold includes a surge tank and a plurality of inlet pipes extending from the surge tank. Of the inlet pipes, proximal portions of an adjacent pair of inlet pipes are integrated, for example, by being connected with a plate-like connecting portion. The proximal portions of the two adjacent inlet pipes are integrated with a side wall of the surge tank by a reinforcing rib. The reinforcing rib extends, for example, from the connecting portion to the side wall of the surge tank. The intake manifold may be formed by a lower half body and an upper half body, which are welded to each other by using welding margins provided in the half bodies. In this case, it is preferable that parts of each welding margin that are located to correspond to the proximal portions of the inlet pipes be wider than the remainder of the same welding margin.

Abstract: An electro-optical device formed on a semiconductor substrate, includes: a first transistor controlling a current level according to a voltage between a gate and a source; a second transistor electrically connected between a data line and the gate of the first transistor; a third transistor electrically connected between the gate and a drain of the first transistor; and a light-emitting element emitting light at a luminance according to the current level, in which one of a source and a drain of the second transistor and one of a source and a drain of the third transistor are formed by a common diffusion layer.

Abstract: An electro-optical device includes a scanning line and a data line intersecting each other, a pixel circuit provided at a position corresponding to an intersection of the scanning line and the data line, and a power supply wiring line that supplies a given potential. The pixel circuit includes a light emitting element and a driving transistor configured to control a current flowing through the light emitting element. A gate electrode of the driving transistor is electrically connected via a first relay electrode to a given node. The first relay electrode is formed in the same layer as the power supply wiring line and the data line. The first relay electrode is surrounded on at least three sides by the power supply wiring line.

Abstract: A hydraulic damping device includes a first cylinder that houses oil, a piston rod that moves in an axial direction of the first cylinder, and a piston section that generates a damping force by a movement of the piston rod. The piston section includes a piston body formed with an oil channel through which oil flows, a base valve that opens and closes the oil channel of the piston body, a ring-shaped ring valve that is provided on the base valve, and a preload spring that has a positioning section that extends radially and determines a position of the ring valve in the radial direction.

Abstract: An electro-optical device includes a reflective layer, a light emitting element including a light emitting layer formed between an anode and a cathode, and a driving transistor configured to control a current flowing through the light emitting element. In the same layer as the reflective layer, a relay electrode included in a current path from the driving transistor to the anode is formed with a gap between the relay electrode and the reflective layer. A contact electrode electrically connecting the relay electrode and the anode is formed as a light shielding layer that blocks light entering the gap.

Abstract: An electro-optical device includes a first pixel circuit provided so as to correspond to a first data line, a second pixel circuit provided so as to correspond to a second data line, a first storage capacitor of which one end is connected to the first data line and the other end is potential-shifted according to a current to be supplied to a light emitting element of the first pixel circuit, a second storage capacitor of which one end is connected to the second data line and the other end is potential-shifted according to a current to be supplied to a light emitting element of the second pixel circuit, and a constant potential line provided between the first storage capacitor and the second storage capacitor in plan view.

Abstract: Provided is an active matrix display device using an organic EL panel including: a plurality of pixel circuits each including an organic light emitting diode arranged in a pixel region of the organic EL panel and a plurality of transistors configured to drive the organic light emitting diode; a plurality of scanning lines arranged along a first direction in the organic EL panel; and a plurality of data lines arranged along a second direction that is orthogonal to the first direction. In at least one set of pixel circuits that are adjacent in the first direction, gate electrodes and impurity diffusion regions of the plurality of transistors have an axisymmetric layout. Gate electrodes of at least one set of transistors that are symmetrically arranged in the at least one set of pixel circuits are integrated.

Abstract: An electro-optical device includes a first pixel circuit provided so as to correspond to a first data line, a second pixel circuit provided so as to correspond to a second data line, a first storage capacitor of which one end is connected to the first data line and the other end is potential-shifted according to a current to be supplied to a light emitting element of the first pixel circuit, a second storage capacitor of which one end is connected to the second data line and the other end is potential-shifted according to a current to be supplied to a light emitting element of the second pixel circuit, and a constant potential line provided between the first storage capacitor and the second storage capacitor in plan view.

Abstract: A latch circuit for outputting data for M pixels present in one line on a display panel in a time-division manner for each pixel, in order to drive each pixel from among the M pixels based on N-bit data, includes M×N 1-bit latch circuits in which N 1-bit latch circuits are arranged in the column direction Y and M 1-bit latch circuits are arranged in the row direction X, each circuit latching 1-bit data. Each 1-bit latch circuit includes a data latch unit circuit that latches data corresponding to any one bit of the N bits at different timings for each row, a line latch unit circuit that simultaneously latches data from the data latch unit circuit in each row, and an output enable element that outputs data from the line latch unit circuit based on an enable signal for selecting any one column.

Abstract: An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.

Abstract: Provided is an active matrix display device using an organic EL panel including: a plurality of pixel circuits each including an organic light emitting diode arranged in a pixel region of the organic EL panel and a plurality of transistors configured to drive the organic light emitting diode; a plurality of scanning lines arranged along a first direction in the organic EL panel; and a plurality of data lines arranged along a second direction that is orthogonal to the first direction. In at least one set of pixel circuits that are adjacent in the first direction, gate electrodes and impurity diffusion regions of the plurality of transistors have an axisymmetric layout. Gate electrodes of at least one set of transistors that are symmetrically arranged in the at least one set of pixel circuits are integrated.

Abstract: Shelf parts of a rack apparatus for an automated warehouse include a hollow placement member and a stopper. The placement member is fixed to a rack main body and has a placement surface onto which an article is placed. The stopper is disposed at an end part of the placement member and restricts vibration of the article in a first horizontal direction. The stopper includes a base member fixed to the placement member, a projection member having a projection extending higher than the placement surface, and a viscoelastic member connecting the base member and the projection member within the placement member. The viscoelastic member generates a damping force when the viscoelastic member is deformed by the shear in the first horizontal direction.

Abstract: A vibration power generation device including a multiple-degree-of-freedom vibration system comprising a first vibration system and a second vibration system, wherein a natural frequency of the first vibration system is different from a natural frequency of the second vibration system. A first mass member of the first vibration system has a hollow structure including a housing space inside, where the second vibration system is housed. A power generating element is mounted on a plate spring of the second vibration system. A support part projects within the housing space, and one end side of the plate spring is attached to the support part and supported within the housing space at a position inward from a peripheral wall of the first mass member. A second mass member of the second vibration system is attached to another end side of the plate spring.

Abstract: An electro-optical device formed on a semiconductor substrate, includes: a first transistor controlling a current level according to a voltage between a gate and a source; a second transistor electrically connected between a data line and the gate of the first transistor; a third transistor electrically connected between the gate and a drain of the first transistor; and a light-emitting element emitting light at a luminance according to the current level, in which one of a source and a drain of the second transistor and one of a source and a drain of the third transistor are formed by a common diffusion layer.

Abstract: An electro-optical device includes a scanning line and a data line intersecting each other, a pixel circuit provided at a position corresponding to an intersection of the scanning line and the data line, and a power supply wiring line that supplies a given potential. The pixel circuit includes a light emitting element and a driving transistor configured to control a current flowing through the light emitting element. A gate electrode of the driving transistor is electrically connected via a first relay electrode to a given node. The first relay electrode is formed in the same layer as the power supply wiring line and the data line. The first relay electrode is surrounded on at least three sides by the power supply wiring line.

Abstract: An electro-optical device includes a first pixel circuit provided so as to correspond to a first data line, a second pixel circuit provided so as to correspond to a second data line, a first storage capacitor of which one end is connected to the first data line and the other end is potential-shifted according to a current to be supplied to a light emitting element of the first pixel circuit, a second storage capacitor of which one end is connected to the second data line and the other end is potential-shifted according to a current to be supplied to a light emitting element of the second pixel circuit, and a constant potential line provided between the first storage capacitor and the second storage capacitor in plan view.

Abstract: In an intake air flow control valve device a flange formed in a housing of the intake air flow control valve device is bolted to a cylinder head via a first gasket and a second gasket along opening outer peripheries of a first intake air passage and a second intake air passage, which are opened to a mount surface of the flange between the flange and a mount surface of the cylinder head.

Abstract: A plurality of pixel circuits provided in a display apparatus respectively include light-emitting elements OLED, first transistors that supply driving currents to the light-emitting elements, second transistors that turn on and off connection between data lines and gates of the first transistors, and third transistors. The display apparatus has first holding capacitors that are spectively inserted and connected midway on the plurality of data lines and shift levels of driving voltages of the first transistors, and holding capacitors that respectively hold potentials of the plurality of data lines. N first holding capacitors are arranged in a column direction Y, each of the first holding capacitors having an electrode width that is smaller than a width of N pixel circuits arranged adjacent to each other in a row direction X, and that is equal to or larger than a width of one pixel circuit.

Abstract: An electro-optical device formed on a semiconductor substrate, includes: a first transistor controlling a current level according to a voltage between a gate and a source; a second transistor electrically connected between a data line and the gate of the first transistor; a third transistor electrically connected between the gate and a drain of the first transistor; and a light-emitting element emitting light at a luminance according to the current level, in which one of a source and a drain of the second transistor and one of a source and a drain of the third transistor are formed by a common diffusion layer.