Abstract: In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.

Abstract: It is an object of the present invention to facilitate charge of a battery of a wireless communication device. In addition, it is another object of the present invention to provide a wireless communication device capable of transmitting and receiving individual information without battery replacement which is required due to the power consumption of a battery. A wireless communication device includes a plurality of antenna circuits and a plurality of batteries electrically connected to any one of the plurality of antenna circuits through a switch, where the plurality of batteries are each electrically connected to a different circuit, the plurality of antenna circuits receive electric waves so that the plurality of batteries electrically connected to the plurality of antenna circuits are charged, and at least one of the plurality of antenna circuits receives an electric wave having a different frequency.

Abstract: A straight tube LED lamp includes: a straight tube in which a plurality of light emitting diodes is housed; a first cap for forming a power feeding connection to the plurality of light emitting diodes, provided on one axial direction end side of the straight tube; and a second cap for grounding, provided on another axial direction end side of the straight tube. A first terminal for forming an electrical connection to a power feeding terminal of a first lamp socket is provided in the first cap. A second terminal for forming an electrical connection to a grounding terminal of a second lamp socket is provided in the second cap.

Abstract: A lighting fixture capable of efficiently radiating heat of a lamp device may be configured to be attached to a socket device. In some examples, by attaching the lamp device to the socket device, a cap portion of the lamp device is brought into contact with a fixture body, and pressed against and brought into close contact with the fixture body by an elastic body. Heat generated by lighting of LEDs of the lamp device is conducted from the cap portion to the fixture body and efficiently radiated.

Abstract: There is provided a lighting fixture capable of efficiently radiating heat of a lamp device attached to a socket device. By attaching the lamp device to the socket device, a cap portion of the lamp device is brought into contact with a fixture body, and pressed against and brought into close contact with the fixture body by an elastic body. Heat generated by lighting of LEDs of the lamp device is conducted from the cap portion to the fixture body and efficiently radiated.

Abstract: A rectifier circuit configured with a conventional configuration using an operational amplifier and a diode by a thin film transistor over an insulating substrate cannot exhibit the performance of a rectifier circuit due to the low stability of operational amplifier and the low high-frequency characteristic. Therefore, the rectifier circuit requires to be configured by using an IC outside of the insulating substrate in order to rectify a high-frequency signal. According to the invention, an amplifier circuit and a waveform shaping circuit are configured with a thin film transistor and a non-rectified signal is switched by a signal thereof, so that a rectifier circuit with the excellent high-frequency characteristic can be realized.

Abstract: A luminaire capable of contacting a lamp device to a luminaire main body is provided.

Abstract: A power storage device in which charge capacity and discharge capacity are high and deterioration in battery characteristics due to charge/discharge is small is provided. A power storage device in which charge capacity and discharge capacity are high and output characteristics are excellent is provided. A power storage device in which charge capacity and discharge capacity are high and cycle characteristics are excellent is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector, an active material including a plurality of protrusions protruding from the current collector and an outer shell in contact with and attached to surfaces of the plurality of protrusions, and graphene in contact with and attached to the outer shell. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.

Abstract: Provided is a negative electrode for a power storage device in which charge/discharge capacity is high and deterioration in battery characteristics due to charge/discharge is small. The negative electrode for a power storage device includes a negative electrode active material having a plurality of protrusions and a bar which serves as a connecting bridge over a first protrusion and a second protrusion among the plurality of protrusions. The bar is provided in a direction perpendicular to a direction in which a current collector is bent. An axis of the first protrusion and an axis of the second protrusion are oriented in the same direction. Further, a graphene covering a side surface of the protrusion or covering the side surface of the protrusion and a top surface of the bar may be provided.

Abstract: A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.

Abstract: A lighting fixture capable of efficiently radiating heat of a lamp device may be configured to be attached to a socket device. In some examples, by attaching the lamp device to the socket device, a cap portion of the lamp device is brought into contact with a fixture body, and pressed against and brought into close contact with the fixture body by an elastic body. Heat generated by lighting of LEDs of the lamp device is conducted from the cap portion to the fixture body and efficiently radiated.

Abstract: A power storage device in which silicon is used as a negative electrode active material layer and which can have an improved performance such as higher discharge capacity, and a method for manufacturing the power storage device are provided. A power storage device includes a current collector and a silicon layer having a function as an active material layer over the current collector. The silicon layer includes a thin film portion in contact with the current collector, a plurality of bases, and a plurality of whisker-like protrusions extending from the plurality of bases. A protrusion extending from one of the plurality of bases is partly combined with a protrusion extending from another one of the plurality of bases.

Abstract: A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound.

Abstract: An electrode for a power storage device with good cycle characteristics and high charge/discharge capacity is provided. In addition, a power storage device including the electrode is provided. The electrode for the power storage device includes a conductive layer and an active material layer provided over the conductive layer, the active material layer includes graphene and an active material including a plurality of whiskers, and the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to have holes in part of the active material layer. Further, in the electrode for the power storage device, the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to cover the active material including a plurality of whiskers. Further, the power storage device including the electrode is manufactured.

Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

Abstract: An object of the present invention is to provide a rectifier circuit which can suppress loss of power due to parasitic capacitance or parasitic inductance of a semiconductor element. The rectifier circuit matches or mismatches impedance between a circuit of a previous stage and the rectifier circuit in accordance with the amplitude of an input AC voltage. When an AC voltage to be input has a smaller amplitude than a predetermined voltage, impedance is matched and the AC voltage is applied as is to the rectifier circuit. Conversely, when an AC voltage to be input has a larger amplitude than a predetermined voltage, impedance is mismatched, and the amplitude of the AC voltage is decreased by reflection and then the AC voltage is applied to the rectifier circuit.

Abstract: A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.

Abstract: The semiconductor device includes a signal processing circuit, an antenna circuit that is connected to the signal processing circuit, and a storage means that supplies electric power to the signal processing circuit. The signal processing circuit receives and transmits information through the antenna circuit, generates a direct current voltage from signals received by the antenna circuit, and stores the direct current voltage in the storage means. Furthermore, the antenna circuit has an antenna portion that receives signals by an electromagnetic induction method and an antenna portion that receives signals by a microwave method so that signals of frequencies from a wide band can be received. Because signals from a wide band can be received, the environment in which the storage means can be charged is widened.

Abstract: To provide graphene through which ions can transfer in the direction perpendicular to a plane of the graphene. Multilayer graphene includes a plurality of graphenes stacked in a layered manner. The plurality of graphenes contain a six-membered ring composed of carbon atoms, a poly-membered ring which is a seven or more-membered ring composed of carbon atoms or carbon atoms and one or more oxygen atoms, and an oxygen atom bonded to one of the carbon atoms in the six-membered ring and the poly-membered ring, which is a seven or more-membered ring. The interlayer distance between adjacent graphenes of the plurality of graphenes is greater than 0.34 nm and less than or equal to 0.5 nm, preferably greater than or equal to 0.38 nm and less than or equal to 0.42 nm.

Abstract: To provide a power storage device having excellent charge/discharge cycle characteristics and a high charge/discharge capacity. The following electrode is used as an electrode of a power storage device: an electrode including a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of whisker-like active material bodies. Each of the plurality of whisker-like active material bodies includes at least a core and an outer shell provided to cover the core. The outer shell is amorphous, and a portion between the current collector and the core of the active material bodies is amorphous. Note that a metal layer may be provided instead of the current collector, the active material bodies do not necessarily have to include the core, and a mixed layer may be provided between the current collector and the active material layer.