Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.

Abstract: A film forming method for forming a silicon nitride film on a substrate, includes supplying a silicon-containing gas into a processing chamber accommodating the substrate, and after the supplying the silicon-containing gas, supplying a nitrogen-containing gas into the processing chamber accommodating the substrate. An internal pressure of the processing chamber during the supplying the nitrogen-containing gas is set higher than an internal pressure of the processing chamber during the supplying the silicon-containing gas.

Abstract: A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

Abstract: A method for forming a film, the method including: forming a SiCN seed layer on a substrate by a thermal ALD, forming a SiN protective layer on the SiCN seed layer by a thermal ALD, and forming a SiN bulk layer on the SiN protective layer by a plasma enhanced ALD.

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

Abstract: A film forming method of forming a silicon nitride film on a substrate, which includes a first film and a second film having different incubation times when a source gas containing silicon and a first nitriding gas for nitriding the silicon are supplied, includes: supplying a plasmarized hydrogen gas to the substrate; supplying a processing gas formed of silicon halide to the substrate; forming a thin layer of silicon covering the first film and the second film by alternately and repeatedly performing the supplying the plasmarized hydrogen gas and the supplying the processing gas; forming a thin layer of silicon nitride by supplying a second nitriding gas for nitriding the thin layer of silicon to the substrate; and forming the silicon nitride film on the thin layer of the silicon nitride by supplying the source gas and the first nitriding gas to the substrate.

Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.

Abstract: A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

Abstract: Disclosed is a method of forming a nitride film on a substrate to be processed (“processing target substrate”) having a carbon-containing film that contains a carbon atom. The method includes placing the processing target substrate within a processing container of a film forming apparatus, and forming a first nitride film on the carbon-containing film by plasma of a first reaction gas including a gas of nitride species having no hydrogen atom, and an inert gas.

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

Abstract: A film-forming method includes: mounting a substrate on a mounting table in a vacuu container; adsorbing a raw material to the substrate by supplying raw material gas containing silicon into the vacuum container; nitriding the raw material by supplying nitriding gas to a plasma formation region inside the vacuum container and supplying plasmarized gas to the substrate; forming a silicon-containing nitride film on the substrate by alternately and repeatedly performing the adsorbing a raw material and the nitriding the raw material; setting stress of the silicon-containing nitride film before the adsorbing a raw material and nitriding the raw material; and adjusting a nitriding time having a length based on first correspondence relationship between the stress of the silicon-containing nitride film and parameter corresponding to the nitriding time in the plasma formation region, and the set stress of the silicon-containing nitride film.

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.