Abstract: A silicon nitride film forming method for forming a silicon nitride film on a substrate to be processed, includes forming a silicon nitride film doped with a predetermined amount of titanium by repeating, a predetermined number of times, forming a silicon nitride film by repeating, a first number of times, a process of causing a silicon source gas to be adsorbed onto the substrate and a process of nitriding the adsorbed silicon source gas with plasma of a nitriding gas, and forming a titanium nitride film by repeating, a second number of times, a process of causing a titanium source gas containing chlorine to be adsorbed onto the substrate and a process of nitriding the adsorbed titanium source gas with the plasma of the nitriding gas.

Abstract: A film forming apparatus for carrying out a film forming process on a substrate by performing a cycle of sequentially supplying a first processing gas and a second processing gas a plurality of times in a vacuum container, includes: a rotary table having one surface on which a substrate mounting region for mounting a substrate is formed; a first gas supply part including a gas discharge portion having gas discharge holes of a first gas with a uniform hole diameter, an exhaust port surrounding the gas discharge portion, and a purge gas discharge port surrounding the gas discharge portion, which are formed on an opposing surface opposite the rotary table; a second gas supply part configured to supply a second gas to a region spaced apart in a circumferential direction of the rotary table from the first gas supply part; and an evacuation port configured to evacuate the vacuum container.

Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

Abstract: A silicon nitride film forming method for forming a silicon nitride film on a substrate to be processed, includes forming a silicon nitride film doped with a predetermined amount of titanium by repeating, a predetermined number of times, forming a silicon nitride film by repeating, a first number of times, a process of causing a silicon source gas to be adsorbed onto the substrate and a process of nitriding the adsorbed silicon source gas with plasma of a nitriding gas, and forming a titanium nitride film by repeating, a second number of times, a process of causing a titanium source gas containing chlorine to be adsorbed onto the substrate and a process of nitriding the adsorbed titanium source gas with the plasma of the nitriding gas.

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

Abstract: A method of forming a nitride film in a fine recess formed in a surface of a substrate to be processed, by repeating a process, which includes adsorbing a film forming raw material gas onto the substrate and nitriding the adsorbed film forming raw material gas. The nitriding the adsorbed film forming raw material gas includes converting a NH3 gas as a nitriding gas, and an adsorption inhibiting gas for inhibiting adsorption of the NH3 gas into radicals and supplying the radicals onto the substrate.

Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

Abstract: Disclosed is a method of forming a nitride film on a substrate to be processed (“processing target substrate”) having a carbon-containing film that contains a carbon atom. The method includes placing the processing target substrate within a processing container of a film forming apparatus, and forming a first nitride film on the carbon-containing film by plasma of a first reaction gas including a gas of nitride species having no hydrogen atom, and an inert gas.

Abstract: An image forming apparatus includes a first image processing unit for performing a first image processing; a discharge unit disposed above the first image processing unit for discharging a medium after the first image processing is performed on the medium; a medium placing unit for placing the medium thus discharged; a second image processing unit disposed above the medium placing unit for performing a second image processing; and an operational unit disposed on the second image processing unit at a specific position thereof for performing a specific operation. The medium placing unit may include a step portion for forming a space between the medium thus discharged and a surface of the medium placing unit. The step portion and the operational unit may be situated at positions, so that the operational unit does not block the step portion viewed from above the image forming apparatus.

Abstract: A film-forming method is provided for forming a planar periodic structure having a predetermined periodicity by depositing liquid material on an object. A liquid drop supplying means is used which supplies a liquid drop at a predetermined driving period to deposit the liquid material on the object; the presence or absence of the supply of the liquid drop is controlled at each driving period in accordance with the periodicity of the planar periodic structure to be formed; and the liquid drop is supplied by controlling the liquid drop supplying means while the liquid drop supplying means is scanned at a predetermined scanning speed in a predetermined scanning direction relative to the object. A natural number times a value obtained by multiplying the driving period and the scanning speed is set to be the structural period of the planar periodic structure in the scanning direction.

Abstract: An image forming apparatus includes an image forming unit for forming an image on a medium; a medium transportation unit for transporting the medium supplied from a medium supply unit to the image forming unit; a roller rotating after contacting with the medium transported from the medium transportation unit; a medium detection unit disposed on a downstream side of the roller in a medium transportation direction for detecting the medium; and a transportation speed adjusting unit for adjusting a transportation speed of the medium from when the roller starts rotating to when the medium detection unit on the downstream side detects the medium lower than a transportation speed at the image forming unit.

Abstract: A CPU unit 2 has a liquid crystal display screen 10, a plurality of operation keys 12, and the like. Each of expansion units 3 to 8 has a push switch button 14. For example, when an operator pushes the switch button 14-1 of the ID-1 unit 3, information concerning the unit 3 is displayed on the liquid crystal screen 10. Next, the operator operates one of the predetermined operation keys 12 of the CPU unit 2, whereby the display contents of the screen 10 are removed and another piece of information concerning the unit 3 is displayed.

Abstract: A film-forming method is provided for forming a planar periodic structure having a predetermined periodicity by depositing liquid material on an object. A liquid drop supplying means is used which supplies a liquid drop at a predetermined driving period to deposit the liquid material on the object; the presence or absence of the supply of the liquid drop is controlled at each driving period in accordance with the periodicity of the planar periodic structure to be formed; and the liquid drop is supplied by controlling the liquid drop supplying means while the liquid drop supplying means is scanned at a predetermined scanning speed in a predetermined scanning direction relative to the object. A natural number times a value obtained by multiplying the driving period and the scanning speed is set to be the structural period of the planar periodic structure in the scanning direction.

Abstract: A CPU unit 2 has a liquid crystal display screen 10, a plurality of operation keys 12, and the like. Each of expansion units 3 to 8 has a push switch button 14. For example, when an operator pushes the switch button 14-1 of the ID-1 unit 3, information concerning the unit 3 is displayed on the liquid crystal screen 10. Next, the operator operates one of the predetermined operation keys 12 of the CPU unit 2, whereby the display contents of the screen 10 are removed and another piece of information concerning the unit 3 is displayed.

Abstract: A disc brake pad obtained by using a composition comprising a fibrous base material except for asbestos, a binder and a friction adjusting agent, wherein a silicone modified resin is contained as a part or whole of the binder and zeolite is contained as a part of the friction adjusting agent can prevent a transfer film from contacting with water or remove the water once adsorbed in the transfer film and can lower the sound pressure of creep groan.

Abstract: An air bag device has an air bag at least partially receivable in a predetermined receiving part of a vehicle along with an inflator for inflating the air bag. A band is breakable by a deployment pressure of the air bag and is provided such that at least a part of the air bag is strapped by the band to retain a folded shape prior to deployment of the air bag. The band is formed of a woven fabric in an embodiment and includes a breaking part formed by breaking assisting structure arranged in a line corresponding to a breaking direction of the breaking part. In an embodiment of the air bag device the woven fabric has weaving thread inclined at an inclination angle with respect to the breaking direction of the breaking part.