Abstract: The present invention provides a highly reliable solder joint, the solder joint including a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, wherein the Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu)3P, and a phase containing microcrystals of Ni3P.

Abstract: A semiconductor laser device includes an N-type cladding layer, an active layer, and a P-type cladding layer. The active layer includes a well layer, a P-side first barrier layer above the well layer, and a P-side second barrier layer above the P-side first barrier layer. The P-side second barrier layer has an AI composition ratio higher than an AI composition ratio of the P-side first barrier layer. The P-side second barrier layer has band gap energy greater than band gap energy of the P-side first barrier layer. The semiconductor laser device has an end face window structure in which band gap energy of a portion of the well layer in a vicinity of an end face that emits the laser light is greater than band gap energy of a central portion of the well layer in a resonator length direction.

Abstract: The invention reduces tensile stress generated in the rotor core in a radial direction when a rotor core and a rotor support member are joined. A region in an axial direction (L) in which a melted joint portion (W2) for joining a rotor core (2) and a rotor support member (9) is formed is set as an axial joint region (JR). Among a plurality of corner portions (4c) of the permanent magnet (4), at least one corner portion (4c) that overlaps with the axial joint region (JR) when seen in a radial direction and that faces an outer peripheral surface (CP2) of the rotor core (2) is set as a specific corner portion (4s). Among facing surface portions (5p) of an inner wall portion of the magnet insertion hole (5) that face the corner portions (4c), the facing surface portion (5p) that faces the specific corner portion (4s) is set as a specific facing surface portion (5s).

Abstract: Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips. A manufacturing method of a semiconductor module using an assembly jig set is provided.

Abstract: A semiconductor light-emitting element includes: a substrate; an n-type clad layer above the substrate; an active layer above the n-type clad layer; and a p-type clad layer above the active layer. The active layer includes: a well layer; an n-side first barrier layer on an n-type clad layer side of the well layer; and a p-side barrier layer on a p-type clad layer side of the well layer. The p-side barrier layer comprises In. The n-side first barrier layer has an In composition ratio lower than an In composition ratio of the p-side barrier layer. The n-side first barrier layer has a band gap energy smaller than a band gap energy of the p-side barrier layer.

Abstract: A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

Abstract: Provided is an imaging lens unit that is able to suppress a reduction in optical performance even if plastic lenses absorb water. The imaging lens unit includes a lens barrel formed of a resin material and first to seventh plastic lenses housed in the lens barrel. Among the first to seventh plastic lenses, at least two adjacent plastic lenses have different water absorption rates and have conical fitting slopes that are centered on an optical axis, are formed outside optical effective portions of the adjacent plastic lenses, and are fittable to each other. The fitting slope of a high-water-absorption plastic lens that has a high water absorption rate is formed outside the fitting slope of a low-water-absorption plastic lens that has a low water absorption rate.

Abstract: Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips. A manufacturing method of a semiconductor module using an assembly jig set is provided.

Abstract: A robot includes a robot body, a control processor, a detection circuit, a memory, and a determining circuit. The control processor is configured to control the robot body to perform a work on a workpiece while the workpiece is conveyed. The detection circuit is configured to detect external force which the robot body receives from the workpiece. The memory is to store a threshold force. The determining circuit is configured to determine whether the external force is equal to or larger than the threshold force.

Abstract: A dental adhesive curable composition containing a polymerizable monomer including a polymerizable monomer represented by formula (1?) and defined amounts of an acidic group-containing polymerizable monomer, a polymerization initiator containing a peroxide and a photopolymerization initiator, and a reductant containing a sulfinic acid compound and/or a salt thereof, and a filler: wherein the R groups, n and m are defined. A dental adhesive curable kit and a mobile tooth fixing material are also provided.

Abstract: A semiconductor device includes: a multilayer substrate which includes a circuit board and an insulating plate on which the circuit board is formed; and a contact part having a cylindrical hollow hole therein and an open end bonded to a bonding area on the front surface of the circuit board via bonding material. In the case of this semiconductor device, wettability of a contact area of the contact part with respect to the bonding material is approximately equal to wettability of at least the bonding area of the circuit board with respect to the bonding material. Thus, the rising of the bonding material into the hollow hole of the contact part during heating performed when the contact part is bonded to the circuit board is reduced.

Abstract: A pressing area set on a main surface of a plate-shaped holding jig is arranged on contact parts. The contact parts are pressed against a multilayer board while heating the multilayer board and the pressing area of the holding jig is inclined with a warp of the multilayer board. In this way, when pressing for bonding the contact parts is performed, even if the multilayer board is warped by the heating and the contact parts are shifted, the contact parts are pressed against the multilayer board without fail.

Abstract: The present invention provides a highly reliable solder joint, the solder joint including a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, wherein the Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu)3P, and a phase containing microcrystals of Ni3P.

Abstract: A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2<Eg3 is satisfied, where Eg2 and Eg3 denote maximum values of band gap energy of the second semiconductor layer and the third semiconductor layer, respectively. The third semiconductor layer includes a first region layer in which band gap energy monotonically decreases toward the fourth semiconductor layer. N2>N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.

Abstract: A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.

Abstract: A filter for an oil catch apparatus is provided. The oil catch apparatus is capable of efficiently extracting oil from air flowing through the oil catch apparatus while being of compact size. The filter includes a cylindrically wound main filter unit, a first keep member for keeping one end of the main filter unit, and a second keep member for keeping the other end of the main filter unit. Air flowing into the main filter unit from an opening formed in the first keep member is cleared of impurities upon passing through the main filter unit, and exits out of the main filter unit.

Abstract: A robot system includes a conveyor, a robot, a speed calculation circuit, and a robot control circuit. The conveyor is configured to convey a workpiece at a conveyance speed. The robot is configured to work on the workpiece while the workpiece is conveyed by the conveyor. The speed calculation circuit is configured to calculate the conveyance speed. The robot control circuit is configured to control a working speed of the robot according to the conveyance speed calculated by the speed calculation circuit.

Abstract: The invention reduces tensile stress generated in the rotor core in a radial direction when a rotor core and a rotor support member are joined. A region in an axial direction (L) in which a melted joint portion (W2) for joining a rotor core (2) and a rotor support member (9) is formed is set as an axial joint region (JR). Among a plurality of corner portions (4c) of the permanent magnet (4), at least one corner portion (4c) that overlaps with the axial joint region (JR) when seen in a radial direction and that faces an outer peripheral surface (CP2) of the rotor core (2) is set as a specific corner portion (4s). Among facing surface portions (5p) of an inner wall portion of the magnet insertion hole (5) that face the corner portions (4c), the facing surface portion (5p) that faces the specific corner portion (4s) is set as a specific facing surface portion (5s).

Abstract: Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips. A manufacturing method of a semiconductor module using an assembly jig set is provided.

Abstract: A pressing area set on a main surface of a plate-shaped holding jig is arranged on contact parts. The contact parts are pressed against a multilayer board while heating the multilayer board and the pressing area of the holding jig is inclined with a warp of the multilayer board. In this way, when pressing for bonding the contact parts is performed, even if the multilayer board is warped by the heating and the contact parts are shifted, the contact parts are pressed against the multilayer board without fail.