Abstract: A method is provided for removing plating blocking ions, such as anions, in pairs with copper ions and oxidant ions of a copper ion reducing agent from an electroless copper plating solution and keeping a constant salt concentration in the electroless copper plating solution during plating. The electroless copper plating method uses a plating solution containing copper sulfate as copper ion sources, and a copper ion complexing agent as copper ion sources, glyoxylic acid as a copper ion reducing agent, and a pH conditioner. The method is characterized by precipitating and removing sulfuric and oxalic ions in said electroless copper plating solution and keeping an optimum concentration of at least one of sulfuric and oxalic ions in said electroless copper plating solution during plating.

Abstract: An object of the present invention is to improve the reliability and the yield of production of semiconductor integrated circuit devices by filling copper in the inside of features having a high aspect ratio for forming multi-layer interconnections composed of a plurality of interconnection layers which are connected to one another and to a copper electroplating bath suitable therefor. In the present invention, when the features are filled with copper, the use of a copper electroplating bath with an addition of cyanine dyes, for example, indolium compounds allows the copper plating to proceed preferentially from the bottoms of the features.

Abstract: An electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein the reducing agent for copper ion is glyoxylic acid or a salt thereof, the pH adjusting agent is potassium hydroxide and the electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.

Abstract: A multilayer wiring substrate which is high in connection reliability is provided through process steps of forming more than one opening, such as a via-hole in a dielectric layer laminated on a substrate, and then applying uniform copper plating to a surface portion of the dielectric layer including the opening to thereby form a wiring layer. An electroless copper plating solution with at least one of mandelonitrile and triethyltetramine mixed therein is used to perform the intended electroless copper plating.

Abstract: To use a catalyst material, which has a functional group that covalently binds to a catalyst metal particle on the surface of a catalyst carrier, and a catalyst metal particle that covalently binds to the functional group, for a fuel cell.

Abstract: It is an object of the present invention to provide a semiconductor device production method in which an electroconductive capping (metal) layer is formed on a copper interconnect surface, wherein the capping (metal) layer is selectively formed to produce the semiconductor device of high reliability. In the semiconductor device production method, a capping (metal) layer is formed on a copper interconnect in a semiconductor integrated circuit, a first capping (metal) layer is formed by electroless plating with a plating solution containing a reducing agent active on a copper interconnect surface, and then a second capping (metal) layer is formed by another electroless plating.

Abstract: The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.

Abstract: A multilayer wiring substrate which is high in connection reliability is provided through process steps of forming more than one opening, such as a via-hole in a dielectric layer laminated on a substrate, and then applying uniform copper plating to a surface portion of the dielectric layer including the opening to thereby form a wiring layer. An electroless copper plating solution with at least one of mandelonitrile and triethyltetramine mixed therein is used to perform the intended electroless copper plating. An alternative process makes use of a electroless copper plating solution with chosen additive agents or “admixtures” containing at least one of mandelonitrile and triethyltetramine plus eriochrome black T along with at least one of 2,2′-bipyridyl, 1,10-phenanthroline, and 2,9-dimethyl-1,10-phenanthroline.

Abstract: A process for selectively forming a metal barrier layer on a surface of an interconnect of a wiring substrate comprising the steps of abrading the substrate and simultaneously feeding onto the substrate a plating solution having said metal dissolved therein. The abrading step comprises contacting the substrate against an abrasive surface and causing relative linear and/or rotary motion between the abrasive surface and the substrate while the substrate is in contact with the abrasive surface. Growth of the metal barrier layer on a portion of the wiring substrate other than the interconnect layer is suppressed and the metal barrier layer thus formed is thinner, exhibits improved uniformity and superior prevention against Cu diffusion.

Abstract: An electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein the reducing agent for copper ion is glyoxylic acid or a salt thereof, the pH adjusting agent is potassium hydroxide and the electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.

Abstract: In order to prevent a rise in resistance due to oxidation of copper wiring and diffusion of copper, a semiconductor device is provided which contains a wire protective film 1 covering the top of the copper wiring 2 formed in the insulation film and a barrier film surrounding the side and bottom of the copper wiring. The wire protective film and/or barrier film is formed with a cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorus, and (3) boron.

Abstract: An object of the present invention is to provide an elecroless copper plating solution using glyoxylic acid or a salt of glyoxylic acid as the reducing agent in which the amount of Cannizzaro reaction product is small, and the mechanical property of the obtained plated film is excellent, and to provide a supplementary solution for the electroless copper plating solution, a plating method capable of stably forming a plated film using the electroless copper plating solution, and a method of manufacturing a wiring board having an excellent connecting reliability of a through hole.

Abstract: A process for selectively forming a metal barrier layer on a surface of an interconnect of a wiring substrate comprising the steps of abrading the substrate and simultaneously feeding onto the substrate a plating solution having said metal dissolved therein. The abrading step comprises contacting the substrate against an abrasive surface and causing relative linear and/or rotary motion between the abrasive surface and the substrate while the substrate is in contact with the abrasive surface. Growth of the metal barrier layer on a portion of the wiring substrate other than the interconnect layer is suppressed and the metal barrier layer thus formed is thinner, exhibits improved uniformity and superior prevention against Cu diffusion.

Abstract: A plating method comprising using a plating solution containing an additive satisfying the following conditions:

Abstract: In electric plating of supplying a current between an anode electrode and a cathode electrode as a plated body immersed in a plating solution thereby forming a plated film comprising a conductor on a surface of the cathode electrode, a preliminary electrolytic electrode that comes in contact with the plating solution before the cathode electrode comes in contact with the plating solution is disposed, and the cathode electrode is brought into contact with the plating solution while supplying a preliminary electrolytic current between the preliminary electrolytic electrode and the anode electrode, whereby a uniform plated film with no voids can be formed while suppressing dissolution of the underlying conductive film in the electric plating treatment.

Abstract: This invention provides an electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time.

Abstract: A plating method comprising using a plating solution containing an additive satisfying the following conditions: 0.005×h2/w<D/&kgr;<0.5×h2/w, and 0.01≦&THgr;≦0.

Abstract: Provided is a wiring board and production method thereof, wherein production of wiring by a full additive method is achieved. This is extremely useful in forming fine copper wiring featuring a high adhesion on an insulating resin substrate. A resin having an excellent alkali resistance is used as the insulating resin substrate, and the copper wiring is formed on the insulating resin substrate through a degenerated layer containing amide group and a metallic oxide layer of a metal having a reduction potential more base than that of copper. The degenerated layer can be provided by, e.g., introduction of amide group into the surface of the insulating resin substrate. The copper can be formed by processes including electroless plating. The insulating resin substrate has superb heat resistance and dimensional stability, and the formed structure can provide a highly packed wiring board.

Abstract: Provided is a wiring board and production method thereof, wherein production of wiring by a fall additive method is achieved. This is extremely useful in forming fine copper wiring featuring a high adhesion on an insulating resin substrate. A resin having an excellent alkali resistance is used as the insulating resin substrate, and the copper wiring is formed on the insulating resin substrate through a degenerated layer containing amide group and a metallic oxide layer of a metal having a reduction potential more base than that of copper. The degenerated layer can be provided by, e.g., introduction of amide group into the surface of the insulating resin substrate. The copper can be formed by processes including electroless plating. The insulating resin substrate has superb heat resistance and dimensional stability, and the formed structure can provide a highly packed wiring board.

Abstract: An object of the present invention is to improve the reliability and the yield of production of semiconductor integrated circuit devices by filling copper in the inside of features having a high aspect ratio for forming multi-layer interconnections composed of a plurality of interconnection layers which are connected to one another and to a copper electroplating bath suitable therefor. In the present invention, when the features are filled with copper, the use of a copper electroplating bath with an addition of cyanine dyes, for example, indolium compounds allows the copper plating to proceed preferentially from the bottoms of the features.