Abstract: Communication systems, communication apparatus, and image processing apparatus, which connect with communication apparatus are disclosed herein. The communication apparatus includes a first memory, which stores first additional information; an additional-information notifying portion, which notifies the image processing apparatus of the first additional information; and a second transmitter, which transmits image data transmitted from a first transmitter to the destination apparatus. The image processing apparatus includes a second memory, which stores second additional information; an information generator, which generates third additional information; and the first transmitter, which adds the third additional information generated by the information generator to the image data and transmits the image data comprising the third additional information to the communication apparatus.

Abstract: On a back surface portion of a grommet, a clamp encircling water stop lip disposed around a first clamp insertion hole and a weather strip lower part water stop lip disposed in a position below a weather strip placement portion are provided. A first protector clamp protrudes from the first clamp insertion hole so that the first protector clamp can be locked in a first body locking hole in a grommet concave portion.

Abstract: Communication systems, communication apparatus, and image processing apparatus, which connect with communication apparatus are disclosed herein. The communication apparatus includes a first memory, which stores first additional information; an additional-information notifying portion, which notifies the image processing apparatus of the first additional information; and a second transmitter, which transmits image data transmitted from a first transmitter to the destination apparatus. The image processing apparatus includes a second memory, which stores second additional information; an information generator, which generates third additional information; and the first transmitter, which adds the third additional information generated by the information generator to the image data and transmits the image data comprising the third additional information to the communication apparatus.

Abstract: A communication system including a communication apparatus that communicates with a destination apparatus, and an image processor that connects to the communication apparatus. The image processor includes a supplying unit that supplies image data to the communication apparatus, and a notifying unit that transmits first additional information to the communication apparatus. The communication apparatus includes a memory that stores second additional information, a information generator that generates third additional information based on the second additional information stored in the memory and the first additional information received from the image processor, and a transmitter that adds the third additional information generated by the information generator to the image data supplied from the image processor and transmits the image data including the third additional information to the destination apparatus.

Abstract: A packaging case 1 is formed of a unitary blank 1a of paper material. The unitary blank 1a has at least two fold lines 2a, 2b between which a back side wall 6a is formed and both sides of which a bottom wall 10 and a top wall 11 are formed. The unitary blank 1a has also incisions 3a, 3b formed on both ends of the fold lines 2a, 2b. The unitary blank is deep drawn to form side walls 6 on each periphery of the bottom wall 10 and the top wall 11 and form rims 8a, 8b protruding outwardly from each upper end of the side walls 6. The unitary blank is folded along the fold lines 2a, 2b so that the rims 8a, 8b come into contact with each other, whereby the bottom wall 10, the top wall 11, the back side wall 6a and the side walls 6 constitute an inner space.

Abstract: On top of a silicon substrate, a polyimide film with a thickness of 10 ?m is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a thickness of 20 ?m is formed. On top of this magnetic thin film, a patterned Ti/Au film and a Ti/Au connection conductor are formed. On top of this, a polyimide film with a thickness of 10 ?m, and a Cu coil with a height 35 ?m, width 90 ?m, space 25 ?m, and a polyimide layer that fills the spaces in the Cu coil are formed. On top of this, via a polyimide film with a thickness of 10 ?m, a magnetic thin film that is a polyimide film containing Fe particles and that has a thickness of 20 ?m is formed. This thin film inductor has a small alternating current resistance. The present invention provides a magnetic thin film that is well suited for mass production, can be manufactured easily, can be made into a thick film, has soft magnetic qualities, and is inexpensive.

Abstract: On top of a silicon substrate, a polyimide film with a thickness of 10 &mgr;m is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a thickness of 20 &mgr;m is formed. On top of this magnetic thin film, a patterned Ti/Au film and a Ti/Au connection conductor are formed. On top of this, a polyimide film with a thickness of 10 &mgr;m, and a Cu coil with a height 35 &mgr;m, width 90 &mgr;m, space 25 &mgr;m, and a polyimide layer that fills the spaces in the Cu coil are formed. On top of this, via a polyimide film with a thickness of 10 &mgr;m, a magnetic thin film that is a polyimide film containing Fe particles and that has a thickness of 20 &mgr;m is formed. This thin film inductor has a small alternating current resistance. The present invention provides a magnetic thin film that is well suited for mass production, can be manufactured easily, can be made into a thick film, has soft magnetic qualities, and is inexpensive.

Abstract: A packaging case 1 is formed of a unitary blank 1a of paper material. The unitary blank 1a has at least two fold lines 2a, 2b between which a back side wall 6a is formed and both sides of which a bottom wall 10 and a top wall 11 are formed. The unitary blank 1a has also incisions 3a, 3b formed on both ends of the fold lines 2a, 2b. The unitary blank is deep drawn to form side walls 6 on each periphery of the bottom wall 10 and the top wall 11 and form rims 8a, 8b protruding outwardly from each upper end of the side walls 6. The unitary blank is folded along the fold lines 2a, 2b so that the rims 8a, 8b come into contact with each other, whereby the bottom wall 10, the top wall 11, the back side wall 6a and the side walls 6 constitute an inner space.

Abstract: On top of a silicon substrate, a polyimide film with a thickness of 10 &mgr;m is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a thickness of 20 &mgr;m is formed. On top of this magnetic thin film, a patterned Ti/Au film and a Ti/Au connection conductor are formed. On top of this, a polyimide film with a thickness of 10 &mgr;m, and a Cu coil with a height 35 &mgr;m, width 90 &mgr;m, space 25 &mgr;m, and a polyimide layer that fills the spaces in the Cu coil are formed. On top of this, via a polyimide film with a thickness of 10 &mgr;m, a magnetic thin film that is a polyimide film containing Fe particles and that has a thickness of 20 &mgr;m is formed. This thin film inductor has a small alternating current resistance. The present invention provides a magnetic thin film that is well suited for mass production, can be manufactured easily, can be made into a thick film, has soft magnetic qualities, and is inexpensive.

Abstract: A field effect transistor utilizes an oxide film to obtain satisfactory performance characteristics and ease of manufacture. The field effect transistor includes a gate over a silicon substrate. The gate of the field effect transistor consists of an oxide film on the silicon substrate, a ferroelectric film on the oxide film, and an electrode metal film on the ferroelectric film. The material and the thickness of ferroelectric film are selected such that the product of the relative dielectric constant of ferroelectric film and the electric field across ferroelectric film is less than 15.6 Mv/cm. The ferroelectric film is easily formed on the oxide film. An electric filed across the oxide film of more than 4 MV/cm will result in a break down in the oxide layer. By employing a ferroelectric film with a low relative dielectric constant, the applied electric field across the oxide film is less than 4 Mv/cm.