Abstract: A non-destructive inspection method of inspecting an inspection target using multiple different types of non-destructive inspection means that include one non-destructive inspection means and at least one other non-destructive inspection means. The method includes determining a marking position on the inspection target in a detection result by the one non-destructive inspection means, causing a device to store the marking position, and fixedly forming a mark on the inspection target corresponding to the marking position. The mark is detectable by the other non-destructive inspection means. The method further includes causing the other non-destructive inspection means to inspect an inspection target including the mark. The method further includes contrasting detection results by the multiple different types of non-destructive inspection means in reference to the mark which is the marking position.

Abstract: A non-destructive inspection method of inspecting an inspection target using multiple different types of non-destructive inspection means that include one non-destructive inspection means and at least one other non-destructive inspection means. The method includes determining a marking position on the inspection target in a detection result by the one non-destructive inspection means, causing a device to store the marking position, and fixedly forming a mark on the inspection target corresponding to the marking position. The mark is detectable by the other non-destructive inspection means. The method further includes causing the other non-destructive inspection means to inspect an inspection target including the mark. The method further includes contrasting detection results by the multiple different types of non-destructive inspection means in reference to the mark which is the marking position.

Abstract: The present invention addresses the issue of providing: a light-receiving element that has an absorption layer of germanium (Ge), is capable of efficiently receiving near infrared light having a large light-reception sensitivity in the absorption layer, from a free space, and has high productivity and low production cost; and a near infrared light detector comprising said light-receiving element. This light-receiving element 10 has, laminated in order upon a substrate 20, an amplification layer 30 containing silicon (Si), an absorption layer 40 containing germanium (Ge), and an antireflection layer 50. The amplification layer 30 has, in order upon the substrate 20, at least an n-doped n-Si layer 31 and a p-doped p-Si layer 33. The absorption layer 40 has at least a p-doped p-Ge layer 42.

Abstract: A non-destructive inspection method for inspecting an object to be inspected using a plurality of different types of non-destructive inspection means is shown. The method includes the following, fixedly forming common marks that can be detected by any of the plurality of non-destructive inspection means on the object to be inspected; then detecting the object to be inspected including the marks by the plurality of non-destructive inspection means respectively; and comparing the detection results by the plurality of non-destructive inspection means using the marks as positional references.

Abstract: Light-receiving element that has an absorption layer of germanium (Ge), is capable of efficiently receiving near infrared light having a large light-reception sensitivity in the absorption layer, from a free space, and has high productivity and low production costs; and a near infrared light detector comprising said light-receiving element. This light-receiving element 10 has, laminated in order upon a substrate 20, an amplification layer 30 containing silicon (Si) and an absorption layer 40 containing germanium (Ge). The amplification layer 30 has, in order upon the substrate 20, at least an n-doped n-Si layer 31 and a p-doped p-Si layer 33. The absorption layer 40 has at least a p-doped p-Ge layer 42 and the layer thickness L of the absorption layer 40 fulfils formula (1). Formula (1): L<(ln 0.8)/? [? indicates the absorption coefficient for germanium (Ge) at the wavelength of the light to be received.

Abstract: The present invention addresses the issue of providing: a light-receiving element that has an absorption layer of germanium (Ge), is capable of efficiently receiving near infrared light having a large light-reception sensitivity in the absorption layer, from a free space, and has high productivity and low production cost; and a near infrared light detector comprising said light-receiving element. This light-receiving element 10 has, laminated in order upon a substrate 20, an amplification layer 30 containing silicon (Si), an absorption layer 40 containing germanium (Ge), and an antireflection layer 50. The amplification layer 30 has, in order upon the substrate 20, at least an n-doped n-Si layer 31 and a p-doped p-Si layer 33. The absorption layer 40 has at least a p-doped p-Ge layer 42.

Abstract: A method for manufacturing a three-dimensionally shaped product, capable of obtaining a three-dimensionally shaped product having a sufficient mechanical strength without reduction in a shaping speed. A method for manufacturing a three-dimensionally shaped product includes a step of preparing a fiber sheet having a predetermined shape, a step of applying a three dimensional shaping composition to the fiber sheet, and a step of solidifying the three dimensional shaping composition applied to the fiber sheet.

Abstract: Disclosed is a manufacturing method for a light emitting device including a light emitting element and a wavelength converting part which converts light emitted from the light emitting element into light of another wavelength. The manufacturing method includes a first step and a second step. The first step is a step of applying onto the light emitting element and drying a first liquid mixture in which phosphor and plate-like particles are dispersed in polyhydric alcohol having a valence of two or more to form a phosphor layer. The second step is a step of applying onto the phosphor layer and firing a second liquid mixture in which a translucent ceramic precursor is dispersed in a solvent to form the wavelength converting part.

Abstract: A multilayer film of an IR cut filter has the following characteristics. The multilayer film is formed by stacking a high refractive index layer 4 and a low refractive index layer 5 on a substrate 2 and average transmittance in a wavelength region of 450 nm to 600 nm is equal to or greater than 90%. A wavelength with transmittance of 50% at an incidence angle of 0° is in a range of 650±25 nm. 0.5%/nm<|DT|<7%/nm is satisfied. A difference in wavelength with transmittance of 50% between an incidence angle of 0° and an incidence angle of 30° is equal to or less than 8 nm. A difference in wavelength with transmittance of 75% between an incidence angle of 0° and an incidence angle of 30° is equal to or less than 20 nm. Here, |DT| is a value (%/nm) of |(T70%?T30%)/(?70%??30%)| at the incidence angle of 0°, T70% is a transmittance value of 70%, T30% is a transmittance value of 30%, ?70% is a wavelength (nm) with transmittance of 70%, and ?30% is a wavelength (nm) with transmittance of 30%.

Abstract: A light-emitting device (100) is provided with a metal part (2) atop a planar LED substrate (1), and an LED element (3) is disposed atop the metal part (2). A glass substrate (5) is provided to an upper surface of the LED element (3), and a wavelength conversion part (6) is formed on an upper surface of the glass substrate (5). The wavelength conversion part (6) comprises a light-transmissive ceramic layer formed by heating a mixture containing a phosphor, an organometallic compound, a layered silicate mineral, an inorganic particulate, an organic solvent, and water.

Abstract: Disclosed is a manufacturing method for a light emitting device Including a light emitting element and a wavelength converting part which converts light emitted from the light emitting element into light of another wavelength. The manufacturing method includes a first step and a second step. The first step is a step of applying onto the light emitting element and drying a first liquid mixture in which phosphor and plate-like particles are dispersed in polyhydric alcohol having a valence of two or more to form a phosphor layer. The second step is a step of applying onto the phosphor layer and firing a second liquid mixture in which a translucent ceramic precursor is dispersed in a solvent to form the wavelength converting part.

Abstract: An optical element for reflecting solar light has excellent weather resistance, and furthermore, a high reflectance in a wide band. When solar light enters an optical element (OE), light (L1) in a short wavelength band among the solar light is reflected by a dielectric multilayer film (DF). Other light (L2) in longer wavelength bands are passed through the dielectric multilayer film (DF), then a base material (SS), and reflected by a metal deposition film (MV) to pass through the base material (SS) and the dielectric multilayer film (DF). Thus, high reflectance in a wide band is ensured.

Abstract: Provided is a highly reliable solar collecting system. Since a concave minor has a reflection film on a base material on the side opposite to the side of a solar light incoming surface, peeling, breaking and the like are suppressed by protecting the reflection film by the base material, even when a dropping material is brought into contact with the side of the reflection film with impact or accumulated dropped materials are periodically cleaned. As an elliptical mirror has a reflection film on the base material on the side of the solar light incoming surface, even when solar light having large energy enters, the solar light is reflected by the reflection surface before reaching the base material and there is a small possibility of having the base material heated.

Abstract: A light-emitting device (100) is provided with a metal part (2) atop a planar LED substrate (1), and an LED element (3) is disposed atop the metal part (2). A glass substrate (5) is provided to an upper surface of the LED element (3), and a wavelength conversion part (6) is formed on an upper surface of the glass substrate (5). The wavelength conversion part (6) comprises a light-transmissive ceramic layer formed by heating a mixture containing a phosphor, an organometallic compound, a layered silicate mineral, an inorganic particulate, an organic solvent, and water.

Abstract: A wavelength conversion element, including: a substrate; and a ceramic layer formed on the substrate, the ceramic layer being obtained by sintering a ceramic precursor; wherein the ceramic precursor is a compound selected from the group composed of alkoxysilane and a compound having a plurality of siloxane structures; a phosphor and particles of an oxide are mixed with the ceramic precursor; the phosphor has particle diameters within a range of from 1 ?m to 50 ?m and a concentration of the phosphor in the ceramic layer is equal to or more than 40 wt % and less than 95 wt %; and the particles of the oxide have primary particle diameters within a range of from 0.001 ?m to 30 ?m and a concentration within a range of from 0.5 wt % to 20 wt % in the ceramic layer.

Abstract: A wavelength conversion element, including: a substrate; and a ceramic layer formed on the substrate, the ceramic layer being obtained by sintering a ceramic precursor; wherein the ceramic precursor is a compound selected from the group composed of alkoxysilane and a compound having a plurality of siloxane structures; a phosphor and particles of an oxide are mixed with the ceramic precursor; the phosphor has particle diameters within a range of from 1 ?m to 50 ?m and a concentration of the phosphor in the ceramic layer is equal to or more than 40 wt % and less than 95 wt %; and the particles of the oxide have primary particle diameters within a range of from 0.001 ?m to 30 ?m and a concentration within a range of from 0.5 wt % to 20 wt % in the ceramic layer.

Abstract: A manufacturing method of a wavelength conversion element suppresses the changes of the chromaticities among wavelength conversion elements. The manufacturing method of the wavelength conversion element including a glass substrate and a ceramic layer in which a phosphor is dispersed is disclosed. The manufacturing method includes the step of preparing a mixture containing a ceramic precursor, a solvent, and the phosphor, which mixture has viscosity within a range of from 10 cp to 1000 cp, the step of coating the mixture onto at least one surface of a glass substrate, the step of baking the mixture to form the ceramic layer, and the step of dicing the glass substrate and the ceramic layer after the baking.

Abstract: Two-dimensional photonic crystal surface-emitting laser comprising a two-dimensional photonic crystal, having media different in refractive index arrayed in a two-dimensional cycle, disposed in the vicinity of an active layer that emits light by the injection of carriers, wherein the two-dimensional photonic crystal consists of square lattices having equal lattice constants in perpendicular directions, and a basic lattice consisting of a square with one medium as a vertex has an asymmetric refractive index distribution with respect to either one of the two diagonals of the basic lattice to thereby emit light in a constant polarizing direction.

Abstract: Provided are a microchip formed by joining a resinous film onto a resinous substrate, which enables the prevention of a leak due to peeling of a peripheral portion and prevention of deformation and clogging of a microchannel, and a method for manufacturing the same. The microchip comprises a resinous substrate including a first surface in which a channel groove is formed and a second surface on the side opposite to the first surface, and a resinous film joined to the first surface of the resinous substrate. A joint plane between the resinous substrate and the resinous film is composed of a central area including an area in which the channel groove is formed and a peripheral area corresponding to the outer periphery of the central area, the joint strength between the resinous substrate and the resinous film in the central area is larger than 0.098 N/cm, and the joint strength in at least part of the peripheral area of the joint plane is larger than the joint strength in the central area.

Abstract: An optical element for reflecting solar light has excellent weather resistance, and furthermore, a high reflectance in a wide band. When solar light enters an optical element (OE), light (L1) in a short wavelength band among the solar light is reflected by a dielectric multilayer film (DF). Other light (L2) in longer wavelength bands are passed through the dielectric multilayer film (DF), then a base material (SS), and reflected by a metal deposition film (MV) to pass through the base material (SS) and the dielectric multilayer film (DF). Thus, high reflectance in a wide band is ensured.