Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: An object of the present invention is to provide a more accurate and sensitive measurement method lowering the possibility of occurrence of nonspecific reaction in immunological measurement of L-FABP. More specifically, an object is to provide a measurement method that is accurate and sensitive even when the concentration of an analyte is low (e.g., an L-FABP concentration is around the normal value). In an immunological measurement method of L-FABP using an anti-L-FABP antibody, nonspecific reaction can easily be suppressed by a polypeptide consisting of amino acids No. 419 to No. 607 of the amino acid sequence of DnaK, a heat shock protein (HSP), derived from E. coli as set forth in SEQ ID NO: 1 or a polypeptide having at least 90% sequence identity with the polypeptide even in highly sensitive measurement.

Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: A developing device includes a developer accommodating container, a developer carrier, an exhaust path, a capturing member, and a closing member. The developer accommodating container accommodates a developer. The developer carrier is disposed in an opening of the developer accommodating container to be rotated while facing an image carrier, and carries the developer. The exhaust path exhausts an air in the developer accommodating container to an outside. The capturing member captures a toner in the exhausted air passing through the exhaust path. The closing member includes a base end portion and a tip end portion. The base end portion is held by the developer accommodating container. The tip end portion is sandwiched between the developer accommodating container and the developer carried on the developer carrier, downstream of the opening in a rotation direction of the developer carrier. The closing member closes a gap.

Abstract: A problem to be solved by the invention is to provide a method of avoiding an influence of hemoglobin in an immunological measurement method for an analyte in a biological sample. The problem is solved by reacting a sample suspected of containing an analyte with an antibody binding to the analyte in the presence of a polypeptide consisting of amino acids No. 419 to No. 607 of the amino acid sequence of DnaK, a heat shock protein (HSP), derived from E. coli as set forth in SEQ ID NO: 1 or a polypeptide having at least 90% sequence identity with the polypeptide.

Abstract: A problem to be solved by the present invention is to inhibit a nonspecific agglutination reaction in an agglutination test using a monoclonal antibody having a property of specifically biding to PIVKA-II and a monoclonal antibody having a property of specifically biding to prothrombin as well as two types of carrier particles carrying these monoclonal antibodies. The nonspecific agglutination reaction can be inhibited by adding certain divalent metal ions to a reaction solution containing the monoclonal antibody having a property of specifically biding to PIVKA-II and the monoclonal antibody having a property of specifically biding to prothrombin as well as the two types of carrier particles carrying these monoclonal antibodies.

Abstract: A problem to be solved by the invention is to provide an immunological measurement method for L-FABP in a sample using an anti-L-FABP antibody having a detection sensitivity equal to or greater than that of an existing pharmaceutical product for in-vitro diagnosis and having a favorable correlation. The problem is solved by a method of detecting L-FABP (liver-type fatty acid binding protein) in a sample with an anti-L-FABP antibody, comprising the step of bringing an anti-L-FABP antibody and a compound having a partial structure of NH2—C?N— and a cyclic structure in a molecule into contact with a sample suspected of containing L-FABP.

Abstract: A developing device includes a developer accommodating container, a developer carrier, an exhaust path, a capturing member, and a closing member. The developer accommodating container accommodates a developer. The developer carrier is disposed in an opening of the developer accommodating container to be rotated while facing an image carrier, and carries the developer. The exhaust path exhausts an air in the developer accommodating container to an outside. The capturing member captures a toner in the exhausted air passing through the exhaust path. The closing member includes a base end portion and a tip end portion. The base end portion is held by the developer accommodating container. The tip end portion is sandwiched between the developer accommodating container and the developer carried on the developer carrier, downstream of the opening in a rotation direction of the developer carrier. The closing member closes a gap.

Abstract: An image forming apparatus includes an image forming unit, a developer replenishing device, a fixing device, a press-contact adjustment mechanism, first and second driving transmission mechanisms, and a driving switching mechanism. The image forming unit forms a developer image on a recording medium. The developer replenishing device and the fixing device are detachable. The developer replenishing device replenishes a developer. The fixing device includes first and second rotation members. The second rotation member faces the first rotation member. The fixing device fixes the developer image to the recording medium. The press-contact adjustment mechanism adjusts a press-contact state between the first and second rotation members. The first driving transmission mechanism transmits a driving force to the press-contact adjustment mechanism. The second driving transmission mechanism transmits a driving force to the developer replenishing device.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: A developer replenishment device includes a developer transport member, a joint member, and an elastic member. The developer transport member transports a developer to a developing device. The joint member is attached to an end portion of the developer transport member on a side of the developing device so as to be relatively displaceable with respect to the developer transport member to be joined to the developing device so as to be able to replenish the developing device with the developer. The elastic member is interposed between the developer transport member and the joint member, and includes a guide hole that guides the developer from the developer transport member to the joint member.

Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: An image forming apparatus includes an image forming unit, a developer replenishing device, a fixing device, a press-contact adjustment mechanism, first and second driving transmission mechanisms, and a driving switching mechanism. The image forming unit forms a developer image on a recording medium. The developer replenishing device and the fixing device are detachable. The developer replenishing device replenishes a developer. The fixing device includes first and second rotation members. The second rotation member faces the first rotation member. The fixing device fixes the developer image to the recording medium. The press-contact adjustment mechanism adjusts a press-contact state between the first and second rotation members. The first driving transmission mechanism transmits a driving force to the press-contact adjustment mechanism. The second driving transmission mechanism transmits a driving force to the developer replenishing device.

Abstract: A transport member includes a shaft portion that extends in one direction and that is disposed in a containing portion, which has a substantially columnar shape extending in the one direction and contains a powder, and a blade portion that includes a body portion having a substantially plate-like shape and a protruding portion having a plate thickness smaller than a plate thickness of the body portion, the body portion having a proximal end, which is fixed to the shaft portion, and a distal end, which is bent by coming into contact with an inner wall of the containing portion, and the protruding portion protruding from the distal end of the body portion.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: A powder storage container includes a storage container body, a movable member, and a restricting portion. The storage container body stores powder therein, and includes a supply portion that supplies the powder. The movable member is provided to the storage container body, and is movable between a closed position at which the supply portion is closed and a supply position at which the supply portion is able to supply the powder. The restricting portion is provided on an inner side with respect to an outer peripheral shape of the movable member to restrict movement of the movable member to the supply position.