Abstract: First, an aqueous solution of water soluble compounds or an aqueous solution of water soluble complexes, which is a salt of elements belonging to the 6A, 7A, 1B, 2B, 3B, 4B, 5B, 6B, or 8 group in a periodic table are prepared. The pH of the aqueous solution is adjusted and titanium trichloride is added thereto. The aqueous solution provided with titanium trichloride is stirred at temperature below the boiling point of the solution under atmospheric pressure or under high pressure. Then, by the reducing action of the titanium trichloride, a fine titanium-free powder selected from the group consisting of a metal powder, an alloy powder containing two or more of metals and non-metals, or a compound powder containing two or more of metals and non-metals is obtained.

Abstract: A magnetoresistance element includes an insulating substrate, a patterned magnetoresistance film of a ferromagnetic material deposited thereon and having a uniaxis magnetic anisotropy, and a patterned hard biasing layer of a ferromagnetic material deposited on the substrate. The biasing layer is divided into two parts on both sides of the magnetoresistance layer and magnetized in the direction parallel to a line which intersects the easy direction of magnetization of the patterned magnetoresistance layer at an acute angle (.theta.).

Abstract: In an electroless plating bath containing bismuth trichloride, a reducing agent and complexing agents, stannous chloride is employed as the reducing agent to enable electroless plating of bismuth, which has generally been regarded as impossible. A preferable composition of the plating bath is 0.08M of bismuth trichloride, 0.34M of sodium citrate, 0.08M of EDTA, 0.20M of nitrilotriacetic acid, and 0.04M of stannous chloride. In plating treatment, the plating bath preferably has a temperature of 60.degree. C. and a pH value of 8.6 to 8.8.

Abstract: In an electroless plating bath containing bismuth trichloride, a reducing agent and complexing agents, stannous chloride is employed as the reducing agent to enable electroless plating of bismuth, which has generally been regarded as impossible. A preferable composition of the plating bath is 0.08M of bismuth trichloride, 0.34M of sodium citrate, 0.08M of EDTA, 0.20M of nitrilotriacetic acid, and 0.04M of stannous chloride. In plating treatment, the plating bath preferably has a temperature of 60.degree. C. and a pH value of 8.6 to 8.8.

Abstract: An electroless plating bath for depositing a metal selected from the group consisting of Ni, Zn, As, Cd, In, Sb, Pb and alloys thereof, which contains a titanium (III) compound as a reducing agent. Typical titanium (III) compounds are titanium halides, cyclopentadienyl complex compounds of titanium (III) ions, titanium sulfate, and titanium hydroxide.

Abstract: A metal film (12) for providing internal electrodes (22) is formed on a back film (11) made of a material such as polyethylene terephthalate by a thin film forming method such as vapor deposition or sputtering. A ceramic green sheet (14) is prepared. Then the metal film (12) is transferred onto the green sheet from the back film (11). In order to form the metal film (12) to be transferred into prescribed patterns, the metal film (12) may be partially removed from the back film (11) to leave only specific parts which are correlative with the prescribed patterns. Alternatively, only specific parts, which are correlative with the prescribed patterns, of the back film (11) may be pressed against the ceramic green sheet (14). A plurality of such ceramic green sheets (14), onto which the parts of the metal films (120 are transferred, have been stacked with each other.

Abstract: A work holder (12) for holding a workpiece (2) while partially masking the same by use of a mask (18). The workpiece and the mask are elastically pressed against each other by an aggregate (15) of heat-resistant fiber such as metal fiber or ceramic fiber, so that the workpiece and the mask are brought into close contact with each other. This work holder is adapted to form a resistor film (9) on a part of the surface of a chip (2) to form a chip-type resistor (1), for example, by a thin film forming method such as sputtering.

Abstract: A structure of a copper conductor is obtained by oxidizing copper film formed on the surface of a substrate, and by heat treating the same in a reducing atmosphere, whereby only the surface layer portion of the oxidized copper film is reduced to become copper. The copper film of a conductor is formed on the surface of the substrate with the oxidized copper film interposed therebetween. As a result, an adhesion of the copper film to the surface of the substrate is enhanced.

Abstract: Thin film electrodes are formed on a chip-type electronic component for connecting to external circuitry.The electronic components is first located so that a first principal plane thereof faces toward a scattering source of an electrode-forming. The first principal plane is covered with a mask except for a pair of edge portions of the first principal plane, which extend a little toward the center of the first principal plane from a pair of first edges. The first edges are respectively defined by the first principal plane and two opposing end planes of the component.A thin film of the electrode material is deposited on each of the edge portions of the first principal plane, on the first edges, and on first portions of the end planes, which extend onto the end planes from the first edges.Then the electronic component is located so that a second principal plane counter to the first principal plane faces toward the scattering source.

Abstract: A thin-film resistor comprising a thin film of a nitride of at least one element belonging to groups III-VI of the periodic table. The thin-film resistor has a metal oxide layer comprising at least one metal oxide selected from the group consisting of manganese oxide, iron oxide, cobalt oxide, nickel oxide, zinc oxide, indium oxide, tin oxide and indium tin oxide interposed between the nitride thin film and an electrode for external connection.

Abstract: A process for metallizing a copper film comprising the step of heat treating a copper film formed by an electroless plating process as opposing electrodes of a ceramic capacitor. The process comprises the steps of placing a ceramic body having a copper film formed on the surface thereof by an electroless plating process within a container sealing the same from the external atmosphere and maintaining constant the internal atmosphere, and heating the container maintaining the surrounding of the container in an inert atmosphere.

Abstract: A monolithic ceramic capacitor comprises a dielectric ceramic element assembly, metal electrodes for external connection and conductive metal oxide layers formed between the ceramic element assembly and the metal electrodes for preventing reduction of metal oxide forming the dielectric ceramic material.

Abstract: A method for inhibiting oxidation of copper electrodes of a ceramic capacitor, comprising the step of subjecting copper films formed by an electroless plating process or the like and serving as opposed electrodes of a ceramic capacitor to a hydrocarbon halide compound including trichloroethylene, perchloroethylene, freon, chlorobenzene, methyl chloride, methylene chloride, chloroform, carbon tetrachloride, or the like.

Abstract: A process for metallizing a copper film comprising the step of heat treating a copper film formed by an electroless plating process as opposing electrodes of a ceramic capacitor. The process comprises the steps of placing a ceramic body having a copper film formed on the surface thereof by an electroless plating process within a container sealing the same from the external atmosphere and maintaining constant the internal atmosphere, and heating the container maintaining the surrounding of the container in an inert atmosphere.

Abstract: A method for processing a waste solution used in a chemical plating process and including a heavy metal complex salt, a reducing agent, and a pH adjusting agent. The heavy metal complex salt is decomposed into a heavy metal component and a complexing agent component by applying ultrasonic vibration to the waste solution. The heavy metal component obtained by decomposition is in a powder state. Then the waste solution is filtered, so that the heavy metal component may be separated from the complexing agent component.

Abstract: A structure of a copper conductor is obtained by oxidizing copper film formed on the surface of a substrate, and by heat treating the same in a reducing atmosphere, whereby only the surface layer portion of the oxidized copper film is reduced to become copper. The copper film of a conductor is formed on the surface of the substrate with the oxidized copper film interposed therebetween. As a result, an adhesion of the copper film to the surface of the substrate is enhanced.