Abstract: The present invention includes a transmitter/receiver 20 that transmits/receives an FMCW based sweep signal, a velocity grouping unit 36 that performs grouping of a target for each velocity range by a velocity of the target calculated based on the sweep signal from the transmitter/receiver, and a correlation tracking unit 37 that performs correlation tracking for each velocity group which is grouped by the velocity grouping unit.

Abstract: A hologram recording film manufacturing method includes the steps of obtaining a laminated structure by alternately laminating M (where M?2) photosensitive material precursor layers including a photosensitive material and at least one (M?1) resin layer on one another, obtaining M photosensitive material layers, where at least two interference fringes with a desired pitch and a desired slant angle are formed on each of the M photosensitive material layers, from the M photosensitive material precursor layers by irradiating the laminated structure with a reference laser light beam and an object laser light beam, and making the slant angles of the M photosensitive material layers different from each other while retaining the pitch value, which is defined on a face of the photosensitive material layer, by irradiating the laminated structure with an energy ray from the laminated structure's one face side, and heating the laminated structure.

Abstract: The present invention intends to provide a manufacturing method of a semi-transmissive liquid crystal display device in which method a structure and manufacturing process thereof are simplified to enable to reduce the manufacturing cost. In order to achieve the above object, a semi-transmissive liquid crystal display device in the invention has a layer constitution in which a reflective pixel electrode is formed with a second conductive film that constitutes a source electrode, a drain electrode, a source wiring and so on and on an upper layer of the second metal film a transmissive pixel electrode made of a transparent conductive film is formed through the insulating film. A TFT array substrate can be formed through 5 times of photoengraving process.

Abstract: A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

Abstract: A data processing apparatus is provided for processing an image signal obtained from a solid-state image pickup device, in which a plurality of types of color filters are discretely provided on pixels, and a pixel to be interpolated and surrounding pixels thereof have image signals. The apparatus comprises an interpolation section for generating a missing color signal in the image signal of each pixel by interpolation using at least the image signals of the surrounding pixels among the image signals of the pixel to be interpolated and the surrounding pixels thereof. The interpolation section obtains an interpolation pattern, which is similar to a pattern of data values of the pixel to be interpolated and the surrounding pixels thereof, depending on uniformity and gradient of the image signals of the pixel to be interpolated and the surrounding pixels thereof, and performs interpolation depending on the interpolation pattern.

Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

Abstract: A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

Abstract: A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

Abstract: A resolution correction apparatus of the present invention includes: an outline signal generator for generating an outline signal, which represents an outline of an image, based on an image signal; an outline correction signal generator for generating an outline correction signal to emphasize the outline of the image, based on the outline signal generated by the outline signal generator and an amount of correction which is increased along radial directions from the center of the image to peripheral portions thereof; and an outline correction signal adder for adding the outline correction signal generated by the outline correction signal generator to the image signal.

Abstract: A substrate with a light-shielding film according to one mode of the invention is obtained in a method of manufacture of a substrate with a light-shielding film having a light-shielding film pattern formed on a substrate, by depositing in order a first film having chromium oxide and a second film having chromium on a substrate, to form a multilayer film; forming a resist pattern on the multilayer film; performing etching of the multilayer film, using an etching liquid comprising ceric ammonium nitrate to which nitric acid is added at a concentration of at least 2.5 mol/liter, to form a light-shielding film pattern; and removing the resist pattern.

Abstract: A flicker correction apparatus for correcting a flicker component of an image signal obtained by imaging an object using an imaging device is provided. The apparatus comprises an image average calculation section for calculating an average of the image signal, a flicker frequency calculation section for calculating a flicker frequency, a flicker data extraction section for extracting flicker data using the average of the image signal and the flicker frequency, a flicker determination section for determining the presence or absence of a flicker phenomenon using the flicker data, a flicker correction amount calculation section for calculating a flicker correction amount using the flicker data, and a flicker correction section for removing the flicker component of the image data using the flicker correction amount.

Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

Abstract: A fine wiring line profile with satisfactory precision is formed from a multilayer film containing a first layer made of an aluminum alloy and a second layer formed thereon made of a molybdenum-niobium alloy, by simultaneously etching the two layers constituting the multilayer film through only one etching operation while preventing the upper layer from forming overhangs. An etchant for etching a multilayer film containing an aluminum alloy layer formed over a substrate and a molybdenum-niobium alloy layer formed thereon having a niobium content of 2-19% by weight contains an aqueous solution of an acid mixture containing phosphoric acid, nitric acid, and an organic acid; and a method of etching is carried out with this etchant. The etchant preferably has a phosphoric acid concentration Np of 50-75% by weight, a nitric acid concentration Nn of 2-15% by weight, and an acid ingredient concentration defined by Np+(98/63)Nn of 55-85% by weight.

Abstract: A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a second metallic pattern is provided on the semiconductor pattern. The second metallic pattern is surrounded by the semiconductor pattern.

Abstract: An electrically erasable programmable read-only memory receives a single supply voltage and a ground voltage, and generates a first voltage higher than both the supply voltage and the ground voltage, and a second voltage lower than both the supply voltage and the ground voltage. Each memory cell in the memory has a nonvolatile storage transistor with a floating gate. To erase the memory cell, the first voltage is applied on a first side of the floating gate and th second voltage is on a second, opposite side of the floating gate. To program the memory cell, the second voltage is applied on the first side of the floating gate, and the first voltage is applied on the second side of the floating gate.

Abstract: A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

Abstract: In the DSP which processes an image pickup signal obtained via an optical lens (imaging optical system) and outputs the resulting image pickup signal as processes to an image display section, distortion aberration due to the optical lens is corrected according to a distance from a pixel position corresponding to an optical axis of the optical lens by changing the pixel position for each of a target image in radial directions when the pixel position corresponding to the optical axis is set as a center while suppressing an occurrence of jaggy in the resulting image. With this structure, an image pickup apparatus which corrects distortion aberration by changing pixel position only in radial directions from a pixel position corresponding to an optical axis of the imaging optical system while suppressing an occurrence of jaggy.

Abstract: A compound represented by the general formula (I) or a salt thereof which has excellent antibacterial activity (R1 represents hydrogen atom or an alkylcarbonyl group, R2 represents hydrogen atom, oxygen atom, hydroxyl group, or an alkylcarbonyloxy group, for example, when R2 is hydrogen atom, R3 represents group (a) (each of R5 and R6 represents hydrogen atom or an alkyl group), R4 represents hydrogen atom or group (c) (each of R8 and R9 represents hydrogen atom or an alkylcarbonyl group), and Me represents methyl group).

Abstract: A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a second metallic pattern is provided on the semiconductor pattern. The second metallic pattern is surrounded by the semiconductor pattern.