Abstract: An information processing apparatus includes a processor configured to: acquire an ordering condition for each of plural outsourcing patterns from an ordering company that places an order in a case where the ordering company outsources at least a part of the order; acquire order receiving conditions presented by plural order receiving companies that are candidates for an outsourcee; and perform control for displaying, for each of the plural outsourcing patterns, information on an order receiving company that presents an order receiving condition meeting the ordering condition for the outsourcing pattern and information on a profit which the ordering company is supposed to get when outsourcing the at least the part of the order to the order receiving company.

Abstract: An information processing apparatus includes a processor configured to: obtain an index value representing an operating status of a production facility for a product at each of plural order-receiving companies registered in advance as candidates for a contractor for production of the product; for each order-receiving company, set an order-receiving condition of at least one of an estimated amount and a delivery time for production of the product in accordance with the index value; and output estimate order-receiving conditions of each order-receiving company, which include the order-receiving condition, to an order-placing terminal used by a person in charge at a company that places an order for the product.

Abstract: A combustion chamber structure for an internal combustion engine includes a recessed portion formed in a pent roof of a cylinder head on an upstream side of a tumble flow with respect to a spark plug.

Abstract: A printing management apparatus includes: a receiving unit that receives order information about a printed material and print data of the printed material; a generating unit that generates bar code information about a bar code assigned to each page of the printed material based on the order information; an output unit that outputs the print data and the bar code information to a printer for executing processing including printing of the printed material; an acquiring unit that, in response to a failure occurring in the processing executed by the printer on a failure page, acquires the bar code information about the bar code assigned to the failure page; and a controller that controls the output unit so that the output unit outputs the bar code information about the failure page and reprint data of a reprinted material including the failure page to the printer.

Abstract: The objective of the present invention is to provide a method for efficiently supporting a thiol group-including compound on an insoluble base material. The method for supporting a thiol group-including compound on an insoluble base material according to the present invention is characterized in comprising Step A: treating the thiol group-including compound with a thiol group-including organic reducing agent and an inorganic reducing agent, and Step B: contacting a reaction liquid of said Step A with the insoluble base material.

Abstract: An information processing apparatus includes a processor configured to convert, using a conversion rule prescribing an association between order reception information on an article and manufacturing information used by each of plural manufacturers manufacturing the article in accordance with the order reception information on the article, the order reception information into the manufacturing information used by a designated manufacturer that is requested to manufacture the article.

Abstract: A semiconductor device of embodiments includes a silicon carbide layer having a first face and a second face, a gate electrode, a gate insulating layer on the first face. The silicon carbide layer includes a first silicon carbide region of a first conductive type; a second silicon carbide region of a second conductive type disposed between the first silicon carbide region and the first face; a third silicon carbide region of a second conductive type between the first silicon carbide region and the first face; a fourth silicon carbide region; a fifth silicon carbide region; a sixth silicon carbide region of a second conductive type between the first silicon carbide region and the first face and between the second silicon carbide region and the third silicon carbide region; and a crystal defect. The crystal defect is in the sixth silicon carbide region.

Abstract: There is provided a biological gas measurement device that continuously collects biological gas, and is able to immediately and chronologically measure a target substance from the collected biological gas. A skin gas measurement device includes a biological gas collector 10 having an aperture portion 11 in a side thereof that faces a living body, and having a recessed portion 12 that is connected with the aperture portion 11 and serves as a space for collecting biological gas, a measurement device 100 that measures a target substance in the biological gas collected by the biological gas collector 10, an outflow path 40 through which collected biological gas is discharged from the recessed portion 12 to the measurement device 100, and a correction device 124 that corrects measurements of the target substance performed by the measurement device 100, and enables measurement results of the target substance from which effects of moisture present inside the outflow path 40 have been excluded to be output.

Abstract: A semiconductor device of embodiments includes a silicon carbide layer including an element region and a termination region around the element region, the termination region having first straight-line portions extending in a first direction, second straight-line portions extending in a second direction, and corner portions between the first straight-line portions and the second straight-line portions, the termination region including a second-conductivity-type second silicon carbide region having a dot-line shape with first dot portions and first space portions surrounding the element region, an occupation ratio of the first dot portions is larger in the corner portions than in the first straight-line portions, and a second-conductivity-type third silicon carbide region having a dot-line shape with second dot portions and second space portions surrounding the second silicon carbide region, an occupation ratio of the second dot portions is lager in the corner portions than in the first straight-line portions.

Abstract: An information processing apparatus includes a processor. The processor is configured to store received-order information indicating that production of printed matter is acceptable and containing device information used for producing the printed matter, accept order information with respect to a process for producing the printed matter, identify the received-order information indicating that the production of the printed matter is acceptable from the stored received-order information by using the printed matter indicated in the order information as a search condition, and associate the order information with at least one device corresponding to the device information associated with the identified received-order information.

Abstract: A printing management apparatus includes a processor configured to acquire an order quantity being a quantity of paper required for printing, acquire a stock quantity for each attribute of paper, the stock quantity being a quantity of paper having at least one or more attributes in common with attributes of the paper which is required for the printing and is in stock by a printer, and, when the order quantity is greater than the stock quantity and a sum of at least two stock quantities is equal to or greater than the order quantity, display the printer as a printer capable of accepting an order.

Abstract: A grouping system includes a first grouping apparatus having a first processor configured to receive a print order for a first apparatus, the print order including a plurality of jobs, group the plurality of jobs included in the print order for the first apparatus, specify ungrouped jobs that are jobs which are not grouped by the grouping, and perform a control to transmit the ungrouped jobs to a second grouping apparatus, and the second grouping apparatus having a second processor configured to receive a print order for a second apparatus, the print order including jobs, perform a control to receive the ungrouped jobs from the first grouping apparatus, and group the jobs included in the print order for the second apparatus and the ungrouped jobs.

Abstract: A heat shielding member includes a base, and a heat shielding membrane on the base. The heat shielding membrane includes a porous layer including at least a closed pore. The porous layer includes resin and carbon-based filler. The heat shielding member has both of low thermal conductivity and low heat capacity and improves the fuel economy performance.

Abstract: A semiconductor device of embodiments includes a silicon carbide layer including an element region and a termination region around the element region, the termination region having first straight-line portions extending in a first direction, second straight-line portions extending in a second direction, and corner portions between the first straight-line portions and the second straight-line portions, the termination region including a second-conductivity-type second silicon carbide region having a dot-line shape with first dot portions and first space portions surrounding the element region, an occupation ratio of the first dot portions is larger in the corner portions than in the first straight-line portions, and a second-conductivity-type third silicon carbide region having a dot-line shape with second dot portions and second space portions surrounding the second silicon carbide region, an occupation ratio of the second dot portions is lager in the corner portions than in the first straight-line portions.

Abstract: A heat shield component includes a substrate, and a heat shield film arranged on the substrate. The heat shield film includes a first layer arranged on the substrate, including pores, and having a thermal conductivity of 0.3 W/(m·K) or less and a volumetric specific heat of 1200 kJ/(m3·K) or less, and a second layer arranged on the first layer to provide closed pores between the first layer and the second layer. The heat shield film has a surface roughness on a top surface which is 1.5 ?m Ra or less. The heat shield component can achieve high heat-insulating properties and an improved effect of reducing the emission amount of hydrocarbon in an internal combustion engine, for example.

Abstract: A combustion chamber structure for an internal combustion engine includes a recessed portion formed in a pent roof of a cylinder head on an upstream side of a tumble flow with respect to a spark plug.

Abstract: A semiconductor device of embodiments includes a silicon carbide layer including an element region and a termination region around the element region, the termination region having first straight-line portions extending in a first direction, second straight-line portions extending in a second direction, and corner portions between the first straight-line portions and the second straight-line portions, the termination region including a second-conductivity-type second silicon carbide region having a dot-line shape with first dot portions and first space portions surrounding the element region, an occupation ratio of the first dot portions is larger in the corner portions than in the first straight-line portions, and a second-conductivity-type third silicon carbide region having a dot-line shape with second dot portions and second space portions surrounding the second silicon carbide region, an occupation ratio of the second dot portions is lager in the corner portions than in the first straight-line portions.

Abstract: In a piston of an internal combustion engine in which a recessed portion that holds an intake air swirling flow is formed on a crown surface of the piston, the crown surface includes a heat insulating film formation portion having a heat insulating film whose thermal conductivity is lower than a base material of the piston, the heat insulating film whose thermal capacity per volume is smaller than the base material of the piston, and a heat insulating film non-formation portion provided at a position on the more outside of a cylinder bore side of the internal combustion engine than the heat insulating film formation portion, the heat insulating film non-formation portion not having the heat insulating film.

Abstract: A semiconductor device according to an embodiment includes a silicon carbide layer; a gate electrode; and a gate insulating layer which is provided between the silicon carbide layer and the gate electrode and includes a first silicon oxide layer and a second silicon oxide layer provided between the first silicon oxide layer and the gate electrode, the first silicon oxide layer having a first nitrogen concentration and a first thickness, the second silicon oxide layer having a second nitrogen concentration lower than the first nitrogen concentration and a second thickness. The second thickness between an end portion of the gate electrode and the silicon carbide layer is greater than the second thickness between a central portion of the gate electrode and the silicon carbide layer.

Abstract: A semiconductor device according to an embodiment includes a silicon carbide layer having first and second planes; first and second trenches extending in a first direction; first and second gate electrodes; a first silicon carbide region of a first conductivity type; a plurality of second silicon carbide regions of a second conductivity type between the first silicon carbide region and the first plane, located between the first trench and the second trench, and separated from each other in the first direction; a fourth silicon carbide region of the second conductivity type between two of the second silicon carbide regions and contacting the second silicon carbide region; a fifth silicon carbide region of the second conductivity type between the two second silicon carbide regions and contacting the second silicon carbide region; a first electrode contacting the first silicon carbide region; and a second electrode.