Abstract: Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

Abstract: Epitaxial silicon layers are formed on n+-source/drain regions of two MOS transistors neighboring to each other and formed on a silicon substrate, respectively. In this processing, polycrystalline silicon pieces are generated on an element isolating and insulating film and others. Thereafter, the silicon substrate is exposed to an oxygen atmosphere so that hydrogen reacts with silicon at the surfaces of the epitaxial silicon layers and the surfaces of the polycrystalline silicon pieces to form silicon oxide films and polycrystalline silicon pieces. Thereby, short-circuit between MOS transistors in neighboring memory cells is prevented, and a semiconductor device has a high electrical reliability.

Abstract: A polysilicon film, a titanium silicide film and a titanium nitride film are formed in a storage node contact hole of a memory cell region, while a polysilicon film, a titanium silicide film and a titanium nitride film are formed in a bit line contact hole. In a peripheral circuit region, a peripheral circuit contact hole is formed in a silicon oxide film, and another peripheral circuit contact hole is formed in an interlayer insulation film and a silicon oxide film. Thus obtained are a semiconductor device reducing a leakage current, suppressing an electrical short and attaining a high-speed operation while readily forming each contact hole and a method of fabricating the same.

Abstract: Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

Abstract: According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600° C. to 900° C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.