Abstract: PLS is further suppressed. A solid-state imaging device includes: a first semiconductor substrate including a first semiconductor layer provided with a plurality of photoelectric conversion units that performs photoelectric conversion, and a first wiring layer provided on a surface side opposite to a light incident surface of the first semiconductor layer; a second semiconductor substrate including a second semiconductor layer provided with a charge holding unit that holds signal charge generated in the photoelectric conversion unit and a second wiring layer provided on one surface side of the second semiconductor layer, and overlapped with and bonded to the first semiconductor substrate such that the second wiring layer is positioned between the first wiring layer and the second semiconductor layer; and a light shielding layer provided in at least one of the first wiring layer or the second wiring layer at a position facing the charge holding unit in a thickness direction.

Abstract: The present technology relates to a light receiving device capable of realizing high-speed transfer of charges, a drive control method therefor, and a distance measuring device. The light receiving device includes a pixel that transfers a charge generated in a photoelectric conversion unit to a predetermined FD in a case where a voltage of a predetermined value or more is simultaneously applied to gates of at least two transfer transistors. The present technology can be applied to, for example, a distance measuring module that measures a distance to a subject.

Abstract: The present technology relates to a light-receiving element and a distance measurement module. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Abstract: A solid-state imaging device capable of weakening incident light that passes through an effective pixel region and enters an optical black pixel region. Among a plurality of straight groove portions constituting a trench portion, a first straight groove portion is formed at a boundary between an effective pixel region and an optical black pixel region (OPB pixel region), a plurality of second straight groove portions are formed in the OPB pixel region and parallel to the boundary in a plan view, and a third straight groove portion is formed between photoelectric conversion units in the effective pixel region, a specific straight groove portion, the specific straight groove portion being the first groove portion and/or being one or more of the plurality of second straight groove portions, has a different shape from the third straight groove portion, and a light shielding material is embedded in the specific straight groove portion.

Abstract: The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity._A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

Abstract: The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Abstract: Disclosed herein is a ranging module including a light receiving element, a light emitting unit, and a light-emission control unit. The light receiving element has plural transfer gates which distribute and transfer, to plural floating diffusions, signal charge accumulated in a photodiode that photoelectrically converts incident light, and at least two of the plural transfer gates are disposed point-symmetrically with respect to an optical center as seen from a direction of incidence of the light. The light emitting unit emits irradiation light having a periodically varying brightness. The light-emission control unit controls irradiation timing of the irradiation light.

Abstract: Provided is a measurement device that includes a pixel including a light receiver, a plurality of storage sections, and an electric charge supplying section. The light receiver generates received-light electric charge by performing photoelectric conversion on the basis of light. The plurality of storage sections stores the received-light electric charge and the plurality of storage sections includes a first storage section and a second storage section. The electric charge supplying section selectively supplies the received-light electric charge generated by the light receiver to the plurality of storage sections. The measurement device includes a processor that generates a first detection value on the basis of an electric charge amount of the received-light electric charge stored in the first storage section, and generates a second detection value on the basis of an electric charge amount of the received-light electric charge stored in the second storage section.

Abstract: A solid-state imaging device capable of improving image quality and functionality is provided. Provided is a solid-state imaging device including a pixel region in which a plurality of pixels are two-dimensionally disposed, in which each of the pixels includes a photoelectric conversion unit and a concavo-convex portion, the photoelectric conversion unit photoelectrically converting incident light formed on a semiconductor substrate, and the concavo-convex portion being positioned above the photoelectric conversion unit and formed on a light receiving surface side of the semiconductor substrate, and the number of irregularities of a concavo-convex portion included in a pixel disposed in a central portion of the pixel region and the number of irregularities of a concavo-convex portion included in a pixel disposed in a peripheral portion of the pixel region are different from each other.

Abstract: Provided is an imaging device that makes it possible to exhibit a better imaging performance. The imaging device includes a semiconductor layer, a pixel separation section, a plurality of photoelectric conversion sections, and a plurality of electric charge voltage conversion sections. The semiconductor layer has a surface that extends in an in-plane direction, and a back face positioned on an opposite side of the surface in a thickness direction. The pixel separation section extends from the surface to the back face in the thickness direction, and separates the semiconductor layer into a plurality of pixel regions in the in-plane direction. The plurality of photoelectric conversion sections is respectively provided in the plurality of pixel regions of the semiconductor layer separated by the pixel separation section, and is each configured to generate, by a photoelectric conversion, electric charge corresponding to a light amount of incident light from the back face.

Abstract: The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap to which a first voltage is applied and a first charge detection portion, and a second tap to which a second voltage different from the first voltage is applied and a second charge detection portion. The position of the on-chip lens differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Abstract: The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap to which a first voltage is applied and a first charge detection portion, and a second tap to which a second voltage different from the first voltage is applied and a second charge detection portion. The position of the on-chip lens differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of increasing the capacitance of a charge holding unit. The solid-state imaging element includes a pixel including a photodiode, an FD that accumulates charges generated in the photodiode, and a charge holding unit that is connected in parallel with the FD. The charge holding unit includes a wiring capacitance formed by parallel running of a first wiring connected to a first potential and a second wiring connected to a second potential different from the first potential. The present disclosure can be applied to a solid-state imaging element that performs global shutter type imaging.

Abstract: The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, a first substrate arranged between the on-chip lens and the wiring layer, and a second substrate bonded to the first substrate via the wiring layer, the first substrate includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the second substrate includes a plurality of pixel transistors that performs an operation of reading charges detected in the first and second charge detection portions.

Abstract: The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Abstract: A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.

Abstract: The present technology relates to a light-receiving element and a distance measurement module which are capable of improving characteristics. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Abstract: A measurement device according to the present disclosure includes: a pixel including a light receiver, a plurality of storage sections, and an electric charge supplying section, the light receiver configured to generate received-light electric charge by performing photoelectric conversion on the basis of light, the plurality of storage sections configured to store the received-light electric charge and including a first storage section and a second storage section, and the electric charge supplying section configured to selectively supply the received-light electric charge generated by the light receiver to the plurality of storage sections; and a processor configured to generate a first detection value on the basis of an electric charge amount of the received-light electric charge stored in the first storage section, configured to generate a second detection value on the basis of an electric charge amount of the received-light electric charge stored in the second storage section, and configured to generate a

Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.