Abstract: A display device (50aa) includes a display panel (30) which has a display region (D) for image display and a non-display region (N) surrounding the display region (D), and has flexibility, wherein a reinforcing member (35a) is bonded to in the non-display region (N) of the display panel (30) such that the display region (D) is exposed.

Abstract: Provided is a display panel that has a touch sensor function, that is thin, and that has high flexibility. A plurality of sub-pixel electrodes (46) arranged in matrix and a counter electrode (35) are opposed to each other, and a pair of flexible substrates (21, 31) are opposed to each other, with the sub-pixel electrodes (46) and the counter electrode (35) being interposed therebetween. A desired display is carried out by controlling respective potentials of the plurality of sub-pixel electrodes with respect to the counter electrode. A pressure-sensitive conductive resin (48) whose electric resistance varies with a compressive force applied thereto is provided between the pair of flexible substrates. A change in a distance between the pair of flexible substrates that occurs according to a pressure applied to one of the pair of flexible substrates is detected based on a value of an electric current flowing through the pressure-sensitive conductive resin.

Abstract: A liquid crystal panel 3 includes a TFT-side film substrate 5 made of resin, a counter-side film substrate 7 made of resin, and a liquid crystal device. A TFT-side laminated film 15 is bonded to the TFT-side film substrate 5 with a TFT-side photo-curable transparent adhesive layer 17 being interposed therebetween, and a counter-side laminated film 19 is bonded to the counter-side film substrate 7 with a counter-side photo-curable transparent adhesive layer 21 being interposed therebetween. A CF 23 is formed on a surface of the counter-side laminated film 19 opposite to the counter-side film substrate 7. Thus, a flexible display can be provided, which has such high reliability that no cracking occurs in a device layer and that no peeling at a bonding surface of a flexible film substrate and an adjacent layer occurs, and which has a thickness effectively reduced even if a plurality of functional layers are formed.

Abstract: A display device (50aa) includes a display panel (30) which has a display region (D) for image display and a non-display region (N) surrounding the display region (D), and has flexibility, wherein a reinforcing member (35a) is bonded to in the non-display region (N) of the display panel (30) such that the display region (D) is exposed.

Abstract: Provided is a display panel that has a touch sensor function, that is thin, and that has high flexibility. A plurality of sub-pixel electrodes (46) arranged in matrix and a counter electrode (35) are opposed to each other, and a pair of flexible substrates (21, 31) are opposed to each other, with the sub-pixel electrodes (46) and the counter electrode (35) being interposed therebetween. A desired display is carried out by controlling respective potentials of the plurality of sub-pixel electrodes with respect to the counter electrode. A pressure-sensitive conductive resin (48) whose electric resistance varies with a compressive force applied thereto is provided between the pair of flexible substrates. A change in a distance between the pair of flexible substrates that occurs according to a pressure applied to one of the pair of flexible substrates is detected based on a value of an electric current flowing through the pressure-sensitive conductive resin.

Abstract: A production method for a flexible semiconductor substrate according to the present invention includes: a step of providing an inorganic substrate 11; a step of forming a polyimide layer 22a on the inorganic substrate by using a material in solution form, the polyimide layer 22a having a thickness of less than 10 ?m; a step of forming a semiconductor device on the polyimide layer; a step of, after forming the semiconductor device, removing the polyimide layer from the inorganic substrate; and a step of forming a polyparaxylene resin layer 35, 37 having a thickness which is equal to or greater than the thickness of the polyimide layer. The polyparaxylene resin layer may be formed on the semiconductor device before the removing step, or formed on the opposite side of the polyimide layer from the semiconductor device after the removing step. The production method according to the present invention excels in mass producibility.

Abstract: A film-shape display substrate (26) is fabricated by forming first TFT elements (4) and an organic EL display element (11) on a film-shape base layer (2). A film-shape driver circuit substrate (27) is fabricated by forming, on a film-shape base layer (40), second TFT elements (41) having a higher mobility than the mobility of the first TFT element (4). Then, in a driver circuit region (21), the display substrate (26) and the driver circuit substrate (27) are bonded together via an adhesive conductive member (28), and the first TFT element (4) so that the second TFT elements (41) are electrically connected.

Abstract: It is an object of the present invention to provide an organic electroluminescent display device and a production method thereof with which an organic electroluminescent display device having a high extraction efficiency is produced in a high yield. The present invention is an organic electroluminescent display device, comprising: a component placement substrate having an organic electroluminescence element; a circuit board having a driver circuit for the organic electroluminescence element, the component placement substrate and the circuit board being joined to each other; and a conductor in a clearance between the component placement substrate and the circuit board, the component placement substrate comprising in this order from an observation face side: a transparent separation layer; a light-scattering layer; a transparent electrode; a light-emitting layer; and the reflective electrode, wherein the conductor electrically connects the reflective electrode to an electrode of the driver circuit.

Abstract: A production method for a flexible semiconductor substrate according to the present invention includes: a step of providing an inorganic substrate 11; a step of forming a polyimide layer 22a on the inorganic substrate by using a material in solution form, the polyimide layer 22a having a thickness of less than 10 ?m; a step of forming a semiconductor device on the polyimide layer; a step of, after forming the semiconductor device, removing the polyimide layer from the inorganic substrate; and a step of forming a polyparaxylene resin layer 35, 37 having a thickness which is equal to or greater than the thickness of the polyimide layer. The polyparaxylene resin layer may be formed on the semiconductor device before the removing step, or formed on the opposite side of the polyimide layer from the semiconductor device after the removing step. The production method according to the present invention excels in mass producibility.

Abstract: An island of a crystalline semiconductor according to the present invention has an upper surface and a sloped side surface, which are joined together with a curved surface. Crystal grains in a body portion of the island, including the upper surface, and crystal grains in an edge portion of the island, including the sloped side surface, both have average grain sizes that are greater than 0.2 ?m.

Abstract: A liquid crystal display apparatus (10) includes a first substrate (20) including a base layer (71) and a display element layer formed on the base layer (71). The base layer (71) of the first substrate (20) is constituted by a transparent and colorless resin film formed by vapor deposition at room temperature.

Abstract: To provide a method for producing a high-performance semiconductor device by a simple and low-temperature process. The method for producing a semiconductor device, in accordance with the present invention, is a production method of a semiconductor device including a first insulating film, a semiconductor layer, and a second insulating film in this order on a substrate, the method including the steps of: forming a first insulating film including a hydrogen barrier layer; forming a semiconductor layer on a region where the hydrogen barrier layer of the first insulating film is formed; injecting hydrogen into the semiconductor layer; forming a second insulating film, the second insulating film including a hydrogen barrier layer on at least a region where the semiconductor layer is formed; and subjecting the semiconductor layer to hydrogenation annealing.

Abstract: To provide a semiconductor device and a display device which include a circuit element capable of improving performances and a circuit element capable of increasing a withstand voltage on the same substrate and which can improve the reliability.

Abstract: To provide a method for producing a high-performance semiconductor device by a simple and low-temperature process. The method for producing a semiconductor device, in accordance with the present invention, is a production method of a semiconductor device including a first insulating film, a semiconductor layer, and a second insulating film in this order on a substrate, the method including the steps of: forming a first insulating film including a hydrogen barrier layer; forming a semiconductor layer on a region where the hydrogen barrier layer of the first insulating film is formed; injecting hydrogen into the semiconductor layer; forming a second insulating film, the second insulating film including a hydrogen barrier layer on at least a region where the semiconductor layer is formed; and subjecting the semiconductor layer to hydrogenation annealing.

Abstract: To provide a semiconductor device and a display device which include a circuit element capable of improving performances and a circuit element capable of increasing a withstand voltage on the same substrate and which can improve the reliability.

Abstract: An island of a crystalline semiconductor according to the present invention has an upper surface and a sloped side surface, which are joined together with a curved surface. Crystal grains in a body portion of the island, including the upper surface, and crystal grains in an edge portion of the island, including the sloped side surface, both have average grain sizes that are greater than 0.2 ?m.