Abstract: A cleaning composition for an oral appliance, including (A) and (B). (A) 0.05 mass % or more and 8 mass % or less of an anionic homopolymer or copolymer which has a mass average molecular weight of 2,000 or higher and 500,000 or lower and includes a constituent unit derived from (a1) an anionic monomer having a carboxyl group, a sulfo group, or a phosphoric acid group. (B) one or more surfactants selected from the group consisting of an anionic surfactant, a nonionic surfactant, and an amphoteric surfactant.

Abstract: A cleaning composition for an oral appliance, including the following components (A) and (B): (A) an unsaturated fatty acid having 10 or more and 20 or less carbon atoms or a salt thereof in an amount of 0.5 mass % or more and 14 mass % or less in terms of the fatty acid, and (B) one or more surfactants selected from the group consisting of an anionic surfactant (b1), a nonionic surfactant (b2), and an amphoteric surfactant (b3), and the composition has a pH at 25° C. of 5.5 or higher and 14 or lower.

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

Abstract: Diagnosis device verification system includes: a diagnosis device communicably connected to a vehicle controller mounted on a vehicle, and configured to diagnose the vehicle; a simulator configured to perform simulation operation of the vehicle controller; and a verification device configured to verify operation of the diagnosis device. The diagnosis device is configured to output a diagnosis result acquired by communication with the simulator.

Abstract: To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus is capable of forming a semiconductor film and includes a deposition chamber, a gas supply device connected to the deposition chamber, a gas refining device connected to the gas supply device, a vacuum pump for evacuating the deposition chamber, a target disposed in the deposition chamber, and a cathode disposed to face the target. The gas supply device is configured to supply at least one of an argon gas, an oxygen gas, and a nitrogen gas. The partial pressure of hydrogen molecules is lower than or equal to 0.01 Pa and the partial pressure of water molecules is lower than or equal to 0.0001 Pa in the deposition chamber.

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

Abstract: In a display device including a display panel having two areas and a backlight having two light-emitting sections, a first scanning period, a first blanking period, a second scanning period, and a second blanking period are set sequentially in one frame period, scanning lines in a first area are selected sequentially in the first scanning period, the scanning lines in a second area are selected sequentially in the second scanning period, a second light-emitting section is made to turn on in a first turn-on period set in the first blanking period, and a first light-emitting section is made to turn on in a second turn-on period set in the second blanking period.

Abstract: In a display device including a display panel having two areas and a backlight having two light-emitting sections, a first scanning period, a first blanking period, a second scanning period, and a second blanking period are set sequentially in one frame period, scanning lines in a first area are selected sequentially in the first scanning period, the scanning lines in a second area are selected sequentially in the second scanning period, a second light-emitting section is made to turn on in a first turn-on period set in the first blanking period, and a first light-emitting section is made to turn on in a second turn-on period set in the second blanking period.

Abstract: A liquid crystal display device including a display unit, a backlight including a plurality of light sources, an LED control circuit configured to output a PWM signal (LED control signal) based on a display synchronization signal, such that the light sources are intermittently lighted, and an LED driver configured to control a drive current that is supplied to the light sources, based on the PWM signal, is provided with a monitoring control unit that is configured to perform monitoring at least one of the PWM signal, the drive current, and the display synchronization signal, as a monitoring target. When an abnormality of the monitoring target is detected, the monitoring control unit controls a waveform of the PWM signal such that the drive current that is supplied to the light sources in the backlight becomes zero.

Abstract: In a liquid crystal display device including a liquid crystal panel displaying an image and an LED and an IC driver which is a heat generating component generating heat during operation, the liquid crystal panel includes a pair of substrates that are disposed opposite each other, and a liquid crystal layer containing liquid crystal molecules and sealed between the pair of substrates, and a transparent thermal conducing sheet is disposed such that a part thereof is continuous from the LED and the IC driver and another part thereof is directly in contact with a TFT substrate to cover a display area.

Abstract: A liquid crystal display device including a display unit, a backlight including a plurality of light sources, an LED control circuit configured to output a PWM signal (LED control signal) based on a display synchronization signal, such that the light sources are intermittently lighted, and an LED driver configured to control a drive current that is supplied to the light sources, based on the PWM signal, is provided with a monitoring control unit that is configured to perform monitoring at least one of the PWM signal, the drive current, and the display synchronization signal, as a monitoring target. When an abnormality of the monitoring target is detected, the monitoring control unit controls a waveform of the PWM signal such that the drive current that is supplied to the light sources in the backlight becomes zero.

Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.

Abstract: In a liquid crystal display device including a liquid crystal panel displaying an image and an LED and an IC driver which is a heat generating component generating heat during operation, the liquid crystal panel includes a pair of substrates that are disposed opposite each other, and a liquid crystal layer containing liquid crystal molecules and sealed between the pair of substrates, and a transparent thermal conducing sheet is disposed such that a part thereof is continuous from the LED and the IC driver and another part thereof is directly in contact with a TFT substrate to cover a display area.

Abstract: To carry out a suitable correction process while preventing a cost increase, an image processing device includes a frame memory (120) configured to store image data for the current frame; and a correction section (130, 140) configured to correct an image for the current frame, the correction section being configured to correct the image for the current frame with reference to a frame previous to the current frame, the frame memory being configured to further store image data for the previous frame.

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

Abstract: A transistor or the like having high field-effect mobility is provided. A transistor or the like having stable electrical characteristics is provided. A semiconductor device including a first oxide semiconductor layer, a second oxide semiconductor layer, a gate insulating film, and a gate electrode which partly overlap with one another is provided. The second oxide semiconductor layer is positioned between the first oxide semiconductor layer and the gate insulating film. The gate insulating film is positioned between the second oxide semiconductor layer and the gate electrode. The first oxide semiconductor layer has fewer oxygen vacancies than those of the second oxide semiconductor layer.

Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.

Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.