Abstract: A heat pump system includes a refrigerant circuit in which a compressor, a refrigerant flow path included in a heat medium heat exchanger, an expansion valve, and a heat source side heat exchanger are connected, the heat medium heat exchanger including the refrigerant flow path and a heat medium flow path; a heat medium feed path connected to the heat medium flow path included in the heat medium heat exchanger; an indoor unit connected to the heat medium feed path and configured to condition air inside a room; a room temperature sensor configured to detect an indoor temperature in the room; a heat medium temperature sensor configured to detect a temperature of a heat medium that flows into the indoor unit; and a controller configured to control the refrigerant circuit or the indoor unit by using a set temperature in the room.

Abstract: A sensor element includes a first silicon semiconductor portion, a second silicon semiconductor portion, a third silicon semiconductor portion, and a p-n junction. The first silicon semiconductor portion includes a first p-type impurity. The second silicon semiconductor portion is arranged on the first silicon semiconductor portion and includes a second p-type impurity. The third silicon semiconductor portion is arranged on the second silicon semiconductor portion and includes an n-type impurity. The p-n junction is defined between the second silicon semiconductor portion and the third silicon semiconductor portion. The sensor element has light-receiving sensitivity to light having a wavelength longer than a wavelength corresponding to a band gap of silicon.

Abstract: A positive electrode active material for an all-solid-state lithium-ion battery composed of particles containing crystals of a lithium metal composite oxide, wherein the lithium metal composite oxide has a layered structure and contains at least Li and a transition metal, and the positive electrode active material for an all-solid-state lithium-ion battery satisfies all Formulae (1) to (3).

Abstract: A positive electrode active material for an all-solid-state lithium-ion battery composed of particles containing crystals of a lithium metal composite oxide, wherein the particles have a layered structure and contain at least Li and a transition metal, and in powder x-ray diffraction measurement using CuK? rays, a ratio I003/I004 of an integrated intensity I104 of a diffraction peak in a range of 2?=44.4±1° to an integrated intensity I003 of a diffraction peak in a range of 2?=18.5±1° exceeds 1.23, and wherein a press density A when the positive electrode active material for an all-solid-state lithium-ion battery is compressed at a pressure of 45 MPa is 2.90 g/cm3 or more.

Abstract: What is provided is a positive electrode active material for an all-solid-state lithium-ion battery composed of particles containing crystals of a lithium metal composite oxide, wherein the particles have a hexagonal layered crystal structure belonging to the space group R-3m and contain at least Li and a transition metal, and in powder x-ray diffraction measurement using CuK? rays, the crystallite size L003 of a diffraction peak in a range of 2?=18.7±1° is 1,300 ? or less, and wherein the BET specific surface area is 0.2 m2/g or more and 2.0 m2/g or less.

Abstract: A method of manufacturing a non-classical light source device includes: providing a semiconductor structure that includes a first semiconductor region having a first impurity of a first conductivity type that is one of p-type or n-type, and a second semiconductor region having a second impurity of a second conductivity type that is the other of p-type or n-type; and irradiating the semiconductor structure with laser light in the presence of a forward current flowing through the semiconductor structure while the semiconductor structure is in thermal contact with a cooling base at a temperature higher than ?40° C. and lower than 15° C., thereby diffusing the second impurity.

Abstract: A light-emitting device includes at least one light-emitting element including a semiconductor layered portion and configured to emit light that has a predetermined wavelength and includes a first polarization component and a second polarization component; and at least one polarized light control member in contact with the at least one light-emitting element. The at least one polarized light control member includes a first structure and a second structure that are positioned in order from the at least one light-emitting element side. The first structure receives the light having the predetermined wavelength to generate near-field light. The second structure receives the near-field light and the light having the predetermined wavelength to emit light in which a proportion of the second polarization component is greater than a proportion of the first polarization component.

Abstract: What is claimed is a positive electrode active material for an all-solid-state lithium-ion battery composed of particles containing crystals of a lithium metal composite oxide, wherein the lithium metal composite oxide has a layered structure and contains at least Li and a transition metal, and wherein, in the particles, in pore physical properties obtained from nitrogen adsorption isotherm measurement and nitrogen desorption isotherm measurement at a liquid nitrogen temperature, the total pore volume obtained from a nitrogen adsorption amount when the relative pressure (p/p0) of an adsorption isotherm is 0.99 is less than 0.0035 cm3/g.

Abstract: A mixed powder for an all-solid-state lithium-ion battery, which is composed of a positive electrode active material for a lithium-ion battery and a solid electrolyte, wherein the positive electrode active material for a lithium-ion battery is composed of particles containing crystals of a lithium metal composite oxide, and the lithium metal composite oxide has a layered structure and contains at least Li and a transition metal, wherein the positive electrode active material for a lithium-ion battery has a particle diameter distribution that satisfies the following Formula (1), and wherein the solid electrolyte has a particle diameter distribution that satisfies the following Formula (2): D90-D10 / D50 ? 1 .5 D90-D10 / D50 ? 2.

Abstract: A transmissive polarization control device includes: a semiconductor layer having a first surface and a second surface opposite to the first surface, the semiconductor layer including: a first conductivity type region having a conductivity type, a second conductivity type region having a conductivity type, and a pn junction located between the first and second conductivity type regions; a loop electrode disposed on the first surface and configured such that an electric current flowing through the loop produces a magnetic field in a direction penetrating the pn junction; and a near-field light formation region in which an impurity of the first conductivity type introduced as a dopant into the first conductivity type region for formation of near-field light is distributed. A polarization direction of linearly polarized light traveling through a region surrounded by the loop electrode and the near-field light formation region is rotated according to the electric current.

Abstract: A memory device and an operation method thereof are provided. The memory device includes an input/output data latch circuit and a bit line sensing amplifier circuit. The input/output data latch circuit is coupled between a main input/output line pair and a local input/output line pair. The local input/output line pair is coupled to a plurality of bit line pairs through the bit line sensing amplifier circuit. The memory device performs a two-stage operation to input or output data of a selected bit line pair among the bit line pairs. The selected bit line pair connects to the local input/output line pair only during one stage operation of the two-stage operation. Further, during the other stage operation of the two-stage operation, the data of the selected bit line pair latched in the input/output data latch circuit is transmitted to the main input/output line pair.

Abstract: A sense amplification device is provided. The sense amplification device includes a first sense amplifier, a second sense amplifier, and a third sense amplifier. An input terminal of the first sense amplifier is coupled to a first bit line. An input terminal of the second sense amplifier is coupled to a second bit line. The third sense amplifier has a differential input pair and a differential output pair, wherein a first input terminal of the differential input pair is coupled to an output terminal of the first sense amplifier, a second input terminal of the differential input pair is coupled to an output terminal of the second sense amplifier, a first output terminal of the differential output pair is coupled to the input terminal of the first sense amplifier, and a second output terminal of the differential output pair is coupled to the input terminal of the second sense amplifier.

Abstract: The present invention provides a positive electrode active material for an all-solid-state lithium-ion battery, an electrode, and an all-solid-state lithium-ion battery capable of smoothly exchanging lithium ions with a solid electrolyte at a positive electrode and improving battery performance. A positive electrode active material for an all-solid-state lithium-ion battery formed of particles includes crystals of a lithium metal composite oxide, in which the lithium metal composite oxide has a layered structure and contains at least Li and a transition metal, and the particles have an average crush strength of more than 50 MPa and satisfy Expression (1). 1.

Abstract: A sense amplification device is provided. The sense amplification device includes a first sense amplifier, a second sense amplifier, and a third sense amplifier. An input terminal of the first sense amplifier is coupled to a first bit line. An input terminal of the second sense amplifier is coupled to a second bit line. The third sense amplifier has a differential input pair and a differential output pair, wherein a first input terminal of the differential input pair is coupled to an output terminal of the first sense amplifier, a second input terminal of the differential input pair is coupled to an output terminal of the second sense amplifier, a first output terminal of the differential output pair is coupled to the input terminal of the first sense amplifier, and a second output terminal of the differential output pair is coupled to the input terminal of the second sense amplifier.

Abstract: A memory device and an operation method thereof are provided. The memory device includes an input/output data latch circuit and a bit line sensing amplifier circuit. The input/output data latch circuit is coupled between a main input/output line pair and a local input/output line pair. The local input/output line pair is coupled to a plurality of bit line pairs through the bit line sensing amplifier circuit. The memory device performs a two-stage operation to input or output data of a selected bit line pair among the bit line pairs. The selected bit line pair connects to the local input/output line pair only during one stage operation of the two-stage operation. Further, during the other stage operation of the two-stage operation, the data of the selected bit line pair latched in the input/output data latch circuit is transmitted to the main input/output line pair.

Abstract: The present invention provides a positive electrode active material for an all-solid-state lithium-ion battery, an electrode, and an all-solid-state lithium-ion battery capable of smoothly exchanging lithium ions with a solid electrolyte at a positive electrode and improving battery performance. A positive electrode active material for an all-solid-state lithium-ion battery formed of particles includes crystals of a lithium metal composite oxide, in which the lithium metal composite oxide has a layered structure and contains at least Li and a transition metal, and the particles have an average crush strength of more than 50 MPa and satisfy Expression (1). 1.

Abstract: A transmissive polarization control device includes: a semiconductor layer having a first surface and a second surface opposite to the first surface, the semiconductor layer including: a first conductivity type region having a conductivity type, a second conductivity type region having a conductivity type, and a pn junction located between the first and second conductivity type regions; a loop electrode disposed on the first surface and configured such that an electric current flowing through the loop produces a magnetic field in a direction penetrating the pn junction; and a near-field light formation region in which an impurity of the first conductivity type introduced as a dopant into the first conductivity type region for formation of near-field light is distributed. A polarization direction of linearly polarized light traveling through a region surrounded by the loop electrode and the near-field light formation region is rotated according to the electric current.

Abstract: Memory with an error correction circuit includes: a first error correction circuit performing error correction on first partial data to generate first partial write data or first partial read data; and a second error correction circuit performing error correction on second partial data to generate second partial write data or second partial read data. In a write mode, a plurality of sensing drive circuits respectively receive a plurality of first partial write bits of the first partial write data and a plurality of second partial write bits of the second partial write data, and each sensing drive circuit combines the first partial write bits with the corresponding second partial write bits and writes them to corresponding memory cell columns; in a read mode, the sensing driving circuits respectively sense stored data in the memory cell columns to generate a plurality of first partial read data and second partial read data.

Abstract: Memory with an error correction circuit includes: a first error correction circuit performing error correction on first partial data to generate first partial write data or first partial read data; and a second error correction circuit performing error correction on second partial data to generate second partial write data or second partial read data. In a write mode, a plurality of sensing drive circuits respectively receive a plurality of first partial write bits of the first partial write data and a plurality of second partial write bits of the second partial write data, and each sensing drive circuit combines the first partial write bits with the corresponding second partial write bits and writes them to corresponding memory cell columns; in a read mode, the sensing driving circuits respectively sense stored data in the memory cell columns to generate a plurality of first partial read data and second partial read data.