Abstract: Memory with an error correction circuit includes: a first error correction circuit performing error correction on first partial data to generate first partial write data or first partial read data; and a second error correction circuit performing error correction on second partial data to generate second partial write data or second partial read data. In a write mode, a plurality of sensing drive circuits respectively receive a plurality of first partial write bits of the first partial write data and a plurality of second partial write bits of the second partial write data, and each sensing drive circuit combines the first partial write bits with the corresponding second partial write bits and writes them to corresponding memory cell columns; in a read mode, the sensing driving circuits respectively sense stored data in the memory cell columns to generate a plurality of first partial read data and second partial read data.

Abstract: A positive electrode active material for an all-solid-state lithium-ion battery is provided which includes particles including crystals of a lithium metal composite oxide, in which the lithium metal composite oxide has a layered structure and includes Li and a transition metal, the particles are formed so that a relational expression (D90?D10)/D50?0.90 holds with respect to D10, D50, and D90 obtained from a cumulative particle size distribution based on a volume measured through a laser diffraction type particle size distribution measurement, and the crystals are formed so that a ratio ?/? between a crystallite size ? at a peak in the range of 2?=18.7±2° and a crystallite size ? at a peak in the range of 2?=44.6±2° is 1.0 or more in an X-ray diffraction measurement using CuK? radiation.

Abstract: According to one embodiment, a semiconductor memory device includes: first and second memory cell transistors; first and second bit lines; a first sense amplifier capable of coupling the first bit line to one of first and second power supply lines; and a second sense amplifier capable of coupling the second bit line to one of the first and second power supply lines. A write operation includes first and second steps. In the first step, when the second bit line is uncoupled from the first and second power supply line, the first sense amplifier applies a third voltage to the first bit line. In the second step, when the first bit line is uncoupled from the first and second power supply line, the second sense amplifier applies the second voltage to the second bit line.

Abstract: A device includes a voltage converter circuit that includes an output node, a voltage drop circuit, and a first transistor. The first transistor is electrically coupled between the output node and the voltage drop circuit.

Abstract: A device may include, but is not limited to, a bit line; a power line supplied with a power voltage; a sense amplifier circuit amplifying a voltage of the bit line by using the power voltage of the power line; and a control circuit configured to respond to an active command and supply, as the power voltage, the power line with a first voltage during a first period and a second voltage lower than the first voltage during a second period. The control circuit is further configured to respond to a refresh command and supply, as the power voltage, the power line with the second voltage during both the first and second periods.

Abstract: To provide a semiconductor device including a temperature detection circuit that detects a temperature of the semiconductor device and outputs temperature information, a counter circuit that takes a count of repeated inputs of a refresh command and outputs count information, a comparison circuit that activates a match signal when the temperature information matches the count information, and a refresh control circuit that controls whether to perform a refresh operation according to activation of the refresh command based on the match signal. According to the present invention, a refresh cycle can be finely adjusted because the repeated inputs of the refresh command are thinned out based on the temperature information. With this configuration, power consumption caused by the refresh operation can be reduced.

Abstract: A device may include, but is not limited to, a bit line; a power line supplied with a power voltage; a sense amplifier circuit amplifying a voltage of the bit line by using the power voltage of the power line; and a control circuit configured to respond to an active command and supply, as the power voltage, the power line with a first voltage during a first period and a second voltage lower than the first voltage during a second period. The control circuit is further configured to respond to a refresh command and supply, as the power voltage, the power line with the second voltage during both the first and second periods.

Abstract: To provide a semiconductor device including a temperature detection circuit that detects a temperature of the semiconductor device and outputs temperature information, a counter circuit that takes a count of repeated inputs of a refresh command and outputs count information, a comparison circuit that activates a match signal when the temperature information matches the count information, and a refresh control circuit that controls whether to perform a refresh operation according to activation of the refresh command based on the match signal. According to the present invention, a refresh cycle can be finely adjusted because the repeated inputs of the refresh command are thinned out based on the temperature information. With this configuration, power consumption caused by the refresh operation can be reduced.

Abstract: A device includes a voltage converter circuit that includes an output node, a voltage drop circuit, and a first transistor. The first transistor is electrically coupled between the output node and the voltage drop circuit.

Abstract: This invention provides a catalyst for producing hydrogen gas from a mixed gas comprising dimethyl ether and water vapor or carbon dioxide gas, which comprises copper, iron, cobalt, palladium, iridium, platinum, rhodium, or nickel as an active component, and a method of producing synthesis gas or hydrogen gas in a high yield at a low temperature. By using the catalyst, fuel cell, electricity generation, reduction of iron ore and the like can be carried out.

Abstract: This invention provides a catalyst for producing hydrogen gas from a mixed gas comprising dimethyl ether and water vapor or carbon dioxide gas, which comprises copper, iron, cobalt, palladium, iridium, platinum, rhodium, or nickel as an active component, and a method of producing synthesis gas or hydrogen gas in a high yield at a low temperature. By using the catalyst, a fuel cell, electricity generation, reduction of iron ore and the like can be carried out.