Abstract: The present invention provides an interlayer film for laminated glass which has excellent sound insulating properties even when the thickness is reduced, and also hardly causes optical unevenness. An interlayer film for laminated glass includes at least one layer A containing a thermoplastic elastomer, wherein the shear storage modulus of the layer A at 70° C. as measured by performing a dynamic viscoelasticity test at a frequency of 1,000 Hz in accordance with ASTM D4065-06 is 1 MPa or more, and a layer having a higher shear storage modulus than the layer A is provided on at least one surface of the layer A, and at least one surface of the interlayer film for laminated glass is in a state of having been shaped.

Abstract: A multilayer interlayer containing a specified ionomer skin layer and an acoustic damping intermediate layer, and laminate containing such interlayer are provided, wherein the laminate has a desirable combination of sound insulating, flexural strength and optical properties suitable for use in transportation and architectural end uses.

Abstract: An interlayer for a laminated glass is provided. The interlayer film contains (a) a polyvinyl acetal with an acetalization degree of 60 to 80 mol %, a content of a vinyl ester monomer unit of from 0.1 to 20 mol %, and a viscosity-average degree of polymerization of from 1400 to 4000, and (b) light-diffusing fine particles in which an absolute value difference between a refractive index of the light-diffusing fine particles and a refractive index of the intrlayer excluding the light-diffusing fine particles is 0.20 or more and a haze as measured in accordance with JIS K 7105 for a laminated glass prepared by sandwiching the interlayer film between two glass sheets with a thickness of 3 mm is 20% or less.

Abstract: An image forming apparatus includes an image forming device that forms an image on a recording medium with a powdery material, the image being sized so as to extend beyond an edge of the recording medium; a collecting device that collects the material that has extended off the recording medium as a result of the image forming device forming the image; and a restricting unit that controls the image forming device in such a manner that the image forming device reduces an amount of use of the material in a region of the image that extends off the recording medium to a larger degree on an outer side of the image than a side of the image near the recording medium.

Abstract: An image forming apparatus includes an image forming device that forms an image on a recording medium with a powdery material, the image being sized so as to extend beyond an edge of the recording medium; a collecting device that collects the material that has extended off the recording medium as a result of the image forming device forming the image; and a restricting unit that controls the image forming device in such a manner that the image forming device reduces an amount of use of the material in a region of the image that extends off the recording medium to a larger degree on an outer side of the image than a side of the image near the recording medium.

Abstract: Provided is a charging unit including a charging member that is provided and comes in contact with a surface of an image holding member holding an image to charge the image holding member, a cleaning member that is provided and comes in contact with a surface of the charging member to clean the charging portion which is provided with an opening portion that opens in a direction intersecting rotating shafts of the charging member and the cleaning member, and which supports one end of the charging member is inserted through the opening portion to support the one end of the charging member, and a second support portion which is formed by being connected to the first support portion and which supports one end of the cleaning member which is inserted from the opening portion through the first support portion.

Abstract: Provided is a charging unit including a charging member that is provided and comes in contact with a surface of an image holding member holding an image to charge the image holding member, a cleaning member that is provided and comes in contact with a surface of the charging member to clean the charging member, and a support member that includes a first support portion which is provided with an opening portion that opens in a direction intersecting rotating shafts of the charging member and the cleaning member, and which supports one end of the charging member is inserted through the opening portion to support the one end of the charging member, and a second support portion which is formed by being connected to the first support portion and which supports one end of the cleaning member which is inserted from the opening portion through the first support portion.

Abstract: A hypertext displaying apparatus in which when a link destination indicated in stored data is designated, a processing section instructs a transmission/reception section to download hypertext data at the link destination. Additionally, the processing section instructs a history storage section to register an identifier of the currently-displayed stored data. If a user indicates a “previous content” instruction, the processing section reads from a stored information storage section the stored data corresponding to the identifier registered in the history information storage section, so that the stored data is displayed on a screen.

Abstract: A cleaning device includes a cleaning member that comes into contact with a developer carrier, which carries developer, in a direction crossing a moving direction of the developer carrier and cleans the developer carrier by removing the developer from the developer carrier, a recovery section that is provided with a recovery port formed inside of end portions of the developer carrier in the direction crossing the moving direction of the developer carrier and recovers the developer, which is removed by the cleaning member, through the recovery port, and a guide member that guides the developer to the recovery port, one end of the guide member being positioned outside an end portion of the cleaning member and the end portion of the developer carrier, and the other end of the guide member being positioned inside the cleaning member in the direction crossing the moving direction of the developer carrier.

Abstract: The present invention aims at providing a general-purpose experimental tool which specifically binds to a macromolecular substance that will be a receptor for a specific ligand such as drug, and is applicable throughout various processes to explore the nature of the macromolecular substance. In order to achieve this object, a molecular module has been developed which binds to a target compound and is used for purifying or labeling the target compound, wherein the molecular module has a rod-like spacer substance, an interacting substance that interacts with the target compound, a tag and a labeling substance, the interacting substance being positioned at one end of the rod-like spacer substance, and the tag and the labeling substance being positioned at the other end of the rod-like spacer substance.

Abstract: A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate.

Abstract: A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. The first MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate and a first insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film and which has a first element forming electric dipoles that reduce a threshold voltage of the first MISFET and the second MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate, and a second insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film formed on the surface of the substrate and which has a second element forming electric dipoles in a direction opposite to that in the first MISFET.

Abstract: The player is given the further enjoyment after the completion of a game and encouraged to participate in the next game. The relationship between characteristic parameters used for displaying a character and ability parameters of the player that are computed based on the execution of a game is defined for each character. The relationship between the characteristic parameters and the ability parameters is set to be different from character to character. Therefore, a character that the player has selected changes according to a game result. Because the way a character changes differs from character to character, the player is given the enjoyment of finding a character for which he/she can take advantage of his/her play style in addition to the enjoyment given by an actual game. In order to realize this enjoyment, a relationship between the characteristic parameters and the ability parameters of a character is intentionally made secret and unknown to the player when the player selects a character.

Abstract: A belt feed apparatus, includes: an endless belt member; a belt back surface member including a close portion disposed close to the endless belt member to such a degree that, when the endless belt member stands stationary, the close portion is prevented from touching the endless belt member, and while the endless belt member is circulating, the close portion can be contacted with the endless belt member irregularly; and a non-sticking portion that includes a non-sucking surface contactable with the endless belt member to prevent the endless belt member from being electrostatically sucked to the close portion, the non-sucking surface being provided in an entire portion or part of a surface of the close portion opposed to the endless belt member, and due to the existence of the non-sucking surface, the non-sticking portion being able to prevent the endless belt member from sticking to the close portion.

Abstract: A cleaning device includes a cleaning member that comes into contact with a developer carrier, which carries developer, in a direction crossing a moving direction of the developer carrier and cleans the developer carrier by removing the developer from the developer carrier, a recovery section that is provided with a recovery port formed inside of end portions of the developer carrier in the direction crossing the moving direction of the developer carrier and recovers the developer, which is removed by the cleaning member, through the recovery port, and a guide member that guides the developer to the recovery port, one end of the guide member being positioned outside an end portion of the cleaning member and the end portion of the developer carrier, and the other end of the guide member being positioned inside the cleaning member in the direction crossing the moving direction of the developer carrier.

Abstract: A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film.

Abstract: According to an aspect of the present invention, there is provided a method for fabricating a semiconductor device, the method including: forming a first region and a second region in a substrate; forming the high-permittivity insulating film on the substrate in the first region and in the second region; forming a nitride film on the high-permittivity insulating film in the second region; forming a cap film on the high-permittivity insulating film in the first region and on the nitride film in the second region; forming a metal film on the cap film; and performing a heating process.

Abstract: A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.

Abstract: Further interest after completion of a game and motivation to participate in the next game are given to players of any skill. Using the results (for example, skill points, maximum combo number) of players evaluated for each predetermined parameter in for example a music game, and players again compete against each other. In other words, after the music game a separate game (secondary game) is played. Winning or losing in the secondary game depends on the results of the players for each parameter in the primary game, and the skill of the player in the secondary game. Therefore, a player's effort and skill in the primary game can be utilized in the result of the secondary game, and even if the result of the primary game is unsatisfactory, the player can seize the chance to win the secondary game, depending on the skill of the player in the secondary game.

Abstract: A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.