Abstract: According to one embodiment, a recording medium driving device includes: a recording medium including a plurality of groove regions and land regions, wherein each of the groove regions is formed in a groove formed on top surface of the recording medium and having an arrangement of a magnetic domain formed for each bit, and each of the land regions forms a flat surface on the top surface of the recording medium and in between a pair of the groove regions in adjacency; a head slider disposed to face the top surface of the recording medium; a head element mounted on the head slider; a heater mounted on the head slider and configured to cause a projection in the head element by heat; and a control circuit configured to cause the projection to contact with the land region at time of performing zero calibration for the projection.

Abstract: A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate.

Abstract: The present invention aims at providing a general-purpose experimental tool which specifically binds to a macromolecular substance that will be a receptor for a specific ligand such as drug, and is applicable throughout various processes to explore the nature of the macromolecular substance. In order to achieve this object, a molecular module has been developed which binds to a target compound and is used for purifying or labeling the target compound, wherein the molecular module has a rod-like spacer substance, an interacting substance that interacts with the target compound, a tag and a labeling substance, the interacting substance being positioned at one end of the rod-like spacer substance, and the tag and the labeling substance being positioned at the other end of the rod-like spacer substance.

Abstract: A semiconductor device includes a semiconductor substrate containing a p-type diffusion layer and an n-type diffusion layer which are separated by an element separation film; a gate insulating film formed on or above the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate, respectively; a gate electrode containing a metallic film and formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metallic film; and a silicon-containing layer formed on the metallic film.

Abstract: A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.

Abstract: A method of examining a storage disk is proposed. The method repeats steps of: executing a writing operation and a reading operation in sequence to recording tracks at first intervals so as to check a defect in the recording tracks based on the quality of a read signal; and selecting a recording track at a position spaced by a second interval larger than the first interval from a last recording track of the sequence, the recording track being a first recording track of the recording tracks at the first intervals. The method realizes detection of a defect for recording tracks at the first intervals in a concentrated manner. A recording track is then selected at a position spaced by the second interval from the sequence. A defect can reliably be detected without increasing the total number of recording tracks selected as sample tracks.

Abstract: A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.

Abstract: An image forming apparatus for forming an image on a recording medium, includes: a belt-like member that is capable of cyclic rotation; a plurality of support members, along which the belt-like member is stretched; a first member that is located along an inner face of the belt-like member; and a regulator that is located opposite the inner face of the belt-like member, wherein the regulator maintains a cyclic rotating state for the belt-like member while ensuring the first member is separated by a gap from the belt-like member.

Abstract: According to an aspect of the present invention, there is provided a method for fabricating a semiconductor device, the method including: forming a first region and a second region in a substrate; forming the high-permittivity insulating film on the substrate in the first region and in the second region; forming a nitride film on the high-permittivity insulating film in the second region; forming a cap film on the high-permittivity insulating film in the first region and on the nitride film in the second region; forming a metal film on the cap film; and performing a heating process.

Abstract: A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film.

Abstract: A belt feed apparatus, includes: an endless belt member; a belt back surface member including a close portion disposed close to the endless belt member to such a degree that, when the endless belt member stands stationary, the close portion is prevented from touching the endless belt member, and while the endless belt member is circulating, the close portion can be contacted with the endless belt member irregularly; and a non-sticking portion that includes a non-sucking surface contactable with the endless belt member to prevent the endless belt member from being electrostatically sucked to the close portion, the non-sucking surface being provided in an entire portion or part of a surface of the close portion opposed to the endless belt member, and due to the existence of the non-sucking surface, the non-sticking portion being able to prevent the endless belt member from sticking to the close portion.

Abstract: A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. The first MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate and a first insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film and which has a first element forming electric dipoles that reduce a threshold voltage of the first MISFET and the second MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate, and a second insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film formed on the surface of the substrate and which has a second element forming electric dipoles in a direction opposite to that in the first MISFET.

Abstract: A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.

Abstract: There is disclosed a magnetic disk apparatus including a magnetic disk and a magnetic head for recording data onto the magnetic disk or reading data from the magnetic disk. The magnetic disk includes a retracting part for loading the magnetic head on a surface of the magnetic disk or unloading the magnetic head from the surface of the magnetic disk. The magnetic head includes a protruding part provided at a tip part thereof. The retracting part includes an engaging part extending above the magnetic disk and having a slope part, and a driving part configured to move the engaging part in a direction orthogonal to the surface of the magnetic disk in a state where the protruding part contacts the slope part when unloading the magnetic head from the surface of the magnetic disk.

Abstract: A hypertext displaying apparatus is provided. When a link destination indicated in stored data is designated, a processing section instructs a transmission/reception section to download hypertext data at the link destination, and instructs a history storage section to register an identifier of the currently-displayed stored data. If a user gives a “previous content” instruction, the processing section reads from a stored information storage section the stored data corresponding to the identifier registered in the history information storage section, so that the stored data is displayed on a screen.

Abstract: The player is given the further enjoyment after the completion of a game and encouraged to participate in the next game. The relationship between characteristic parameters used for displaying a character and ability parameters of the player that are computed based on the execution of a game is defined for each character. The relationship between the characteristic parameters and the ability parameters is set to be different from character to character. Therefore, a character that the player has selected changes according to a game result. Because the way a character changes differs from character to character, the player is given the enjoyment of finding a character for which he/she can take advantage of his/her play style in addition to the enjoyment given by an actual game. In order to realize this enjoyment, a relationship between the characteristic parameters and the ability parameters of a character is intentionally made secret and unknown to the player when the player selects a character.

Abstract: A head slider arranged opposite to a storage medium, includes: a slider body, an insulating nonmagnetic layer laminated on a trailing edge of the slider body, and a head element embedded in the nonmagnetic film. A front edge of the head element is exposed at a top surface of the rail. A heater embedded in the nonmagnetic film near the head element, causes the head element to bulge at the top surface of the rail. A protection film is laminated on the top surface of the rail, and at least one protrusion is configured to protrude from a surface of the protection film and come close to the storage medium as compared with the top surface of the protection film when the head element bulges. The protrusion is used to determine how much to heat the film to bring the head element as close to the storage medium as possible.

Abstract: A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.

Abstract: A hypertext displaying apparatus is provided. When a link destination indicated in stored data is designated, a processing section instructs a transmission/reception section to download hypertext data at the link destination, and instructs a history storage section to register an identifier of the currently-displayed stored data. If a user gives a “previous content” instruction, the processing section reads from a stored information storage section the stored data corresponding to the identifier registered in the history information storage section, so that the stored data is displayed on a screen.

Abstract: Further interest after completion of a game and motivation to participate in the next game are given to players of any skill. Using the results (for example, skill points, maximum combo number) of players evaluated for each predetermined parameter in for example a music game, and players again compete against each other. In other words, after the music game a separate game (secondary game) is played. Winning or losing in the secondary game depends on the results of the players for each parameter in the primary game, and the skill of the player in the secondary game. Therefore, a player's effort and skill in the primary game can be utilized in the result of the secondary game, and even if the result of the primary game is unsatisfactory, the player can seize the chance to win the secondary game, depending on the skill of the player in the secondary game.