Abstract: A substrate is processed while plasma distribution on the substrate is controlled by a plasma trap made up of a groove-shaped space between a dielectric plate and a dielectric ring provided around the dielectric plate, and a groove-shaped space between an antenna and a conductor ring provided around the antenna.

Abstract: A plasma processing method includes evacuating a vacuum chamber while supplying a gas into the vacuum chamber, thereby controlling an interior of the vacuum chamber to a pressure, and supplying a high frequency power of a frequency of 50 MHz-3 GHz to an antenna which is set opposite to a substrate placed to a substrate electrode in the vacuum chamber and which has a structure with a dielectric member held between a wall face of the vacuum chamber opposite to the substrate and a metallic plate, thereby generating plasma inside the vacuum chamber and processing the substrate, wherein the high frequency power is supplied to satisfy a relation 3r<c/(f·&egr;½)<9r when c is a light velocity (m/sec), f is a frequency (Hz) of the high frequency power, &egr; is a relative permittivity of the dielectric member and, r is a half (m) of a longer line of a shape of the dielectric member.