Patents by Inventor Takuya Miyakawa

Takuya Miyakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010052390
    Abstract: A method and apparatus for solid bonding without using a bonding agent are provided. A surface of metal, glass, or other bond members 16a and 16b is fluorinated by exposure to a mixture of HF gas from a HF gas supply unit 24 and water vapor from a vapor generator 26 in a fluorination process section 12. The bond members 16a and 16b are then placed in contact at the fluorinated surface on table 36 in bonding process section 14. Argon is then introduced to bonding chamber 34. Pressure is then applied to the first bond member 16a and second bond member 16b by a cylinder 46, and heated to below the melting point by a heater 48, to bond the first and second bond members together.
    Type: Application
    Filed: March 5, 2001
    Publication date: December 20, 2001
    Inventors: Yoshiaki Mori, Yasutsugu Aoki, Takuya Miyakawa
  • Patent number: 6299708
    Abstract: A carbide dispersed, strengthened copper alloy includes copper as a major constituent, carbide particles, and a dispersing agent. The carbide particles consist of one or more carbides selected from chromium carbide, tungsten carbide, molybdenum carbide, and tantalum carbide. The dispersing agent consists of one or more elements selected from magnesium, chromium, silicon, and aluminum.
    Type: Grant
    Filed: July 27, 1998
    Date of Patent: October 9, 2001
    Assignee: Yazaki Corporation
    Inventors: Takao Choh, Hirohiko Fujimaki, Yuji Nitta, Takuya Miyakawa
  • Publication number: 20010009176
    Abstract: A method and apparatus for solid bonding without using a bonding agent are provided. A surface of metal, glass, or other bond members 16a and 16b is fluorinated by exposure to a mixture of HF gas from a HF gas supply unit 24 and water vapor from a vapor generator 26 in a fluorination process section 12. The bond members 16a and 16b are then placed in contact at the fluorinated surface on table 36 in bonding process section 14. Argon is then introduced to bonding chamber 34. Pressure is then applied to the first bond member 16a and second bond member 16b by a cylinder 46, and heated to below the melting point by a heater 48, to bond the first and second bond members together.
    Type: Application
    Filed: March 5, 2001
    Publication date: July 26, 2001
    Inventors: Yoshiaki Mori, Yasutsugu Aoki, Takuya Miyakawa
  • Patent number: 6221197
    Abstract: A method and apparatus for solid bonding without using a bonding agent are provided. A surface of metal, glass, or other bond members 16a and 16b is fluorinated by exposure to a mixture of HF gas from a HF gas supply unit 24 and water vapor from a vapor generator 26 in a fluorination process section 12. The bond members 16a and 16b are then placed in contact at the fluorinated surface on table 36 in bonding process section 14. Argon is then introduced to bonding chamber 34. Pressure is then applied to the first bond member 16a and second bond member 16b by a cylinder 46, and heated to below the melting point by a heater 48, to bond the first and second bond members together.
    Type: Grant
    Filed: December 2, 1998
    Date of Patent: April 24, 2001
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Yasutsugu Aoki, Takuya Miyakawa
  • Patent number: 6183883
    Abstract: Brazing or soldering materials which effectively improve the wettability of the brazing alloy or solder without using flux and a method of manufacturing such materials are provided. A metallic base is placed on turntable inside a vacuum chamber. A copper target is affixed to a sputtering electrode above the metallic base. Air is removed from the vacuum chamber through a vacuum outlet to increase the vacuum therein to a specific pressure, and carbon tetrafluoride and argon are introduced from a gas inlet to control the sputter pressure. Thereafter, turntable is rotated while a high frequency voltage is applied between the target and the metallic base to form a halide layer, such as a layer of copper fluoride, on a surface of metallic base.
    Type: Grant
    Filed: June 16, 1998
    Date of Patent: February 6, 2001
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Katsuhiro Takahashi, Takuya Miyakawa, Yasushi Karasawa
  • Patent number: 6180253
    Abstract: The present invention provides a joining, brazing or soldering material wherein solderability is effectively improved without using a flux, and a production method thereof. In production of a joining material, a halogen compound is mixed, a film is formed on the surface of a solder molding or the surface of a solder molding is halogenated. In production of a joining material, a halogen compound is added to a solder melt, a film of a halogen compound is formed on the surface of a processed joining material, or the surface layer of the processed joining material is converted to a halogen compound layer by halogenation. Film formation or surface treatment may be carried out either a dry or wet method.
    Type: Grant
    Filed: April 2, 1998
    Date of Patent: January 30, 2001
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Katsuhiro Takahashi, Takuya Miyakawa
  • Patent number: 6158648
    Abstract: High frequency electrical discharge or nonpolar discharge using microwaves is generated in a gas that is introduced into a gas duct formed by a dielectric material, such as glass or ceramic. Surface treatment is applied to the components, which are under atmospheric pressure, by exposing them to the gas flow containing the active species generated by the above mentioned electrical discharge. Components are soldered before, during, or after the application of this surface treatment. The surface of the components is exposed to the active species by either directly exposing the components to the electrical discharge, or by blasting the reactive gas flow containing the active species at them. By selecting an appropriate gas for generating the active species, it is possible to improve the wettability of the surface of the component to be soldered, or to remove the organic substances or the oxide film.
    Type: Grant
    Filed: March 11, 1998
    Date of Patent: December 12, 2000
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Takuya Miyakawa, Yasuhiko Asano, Osamu Kurashina, Satoshi Miyamori, Yohei Kurashima, Makoto Anan
  • Patent number: 6086710
    Abstract: In a surface treatment apparatus (30) of the face type, a porous dielectric (37) is supported by the outer periphery portion of the supporting member (45) under the bottom surface of a porous electrode (32). The dielectric can be supported by the supporting member to permit the thermal expansion deformation of the dielectric by forming an upward inclined-face (47) and a downward inclined-face (43) on the supporting member (45) and the dielectric (37), respectively. Further, a discharge gas can be supplied uniformly to a discharge region (51) through the electrode (32) and the dielectric (37), both of which are porous. Many gas exhaust ports (41), by which the flow rate of the gas can be regulated, are provided around the discharge region (51). Thus, the gas is uniformly exhausted around the discharge region (51).
    Type: Grant
    Filed: December 6, 1996
    Date of Patent: July 11, 2000
    Assignee: Seiko Epson Corporation
    Inventors: Takeshi Miyashita, Takuya Miyakawa, Yasutugu Aoki, Isao Kubota, Osamu Kurashina, Yasuhiko Asano, Yoshio Oda, Yoshiaki Mori
  • Patent number: 6051150
    Abstract: An etching method includes the steps of supplying, to the gap between two powered electrodes, a gas capable of discharge which may be produced by adding water to helium and mixing a substance of chlorine, bromine or iodine or a compound containing chlorine, bromine or iodine; applying a RF voltage to the electrodes to produce gaseous discharge between the electrodes and the grounded stage having a material to be processed, thereon i.e., a glass substrate, at a pressure close to or at atmospheric pressure; and exposing the surface of the glass substrate to active species of the gas capable of discharge, which are produced by the discharge, to thus etch an ITO film on the surface of the substrate. The method is capable of removing a metal or a metallic compound containing a metal such as Au, Al, In, Sn or the like, which cannot be easily removed by conventional etching under atmospheric pressure, by producing a compound having a low boiling point or sublimation point and vaporizing it.
    Type: Grant
    Filed: August 5, 1996
    Date of Patent: April 18, 2000
    Assignee: Seiko Epson Corporation
    Inventor: Takuya Miyakawa
  • Patent number: 6006763
    Abstract: A method for surface treatment of a substrate is described in which a gas discharge at or about atmospheric pressure produces activated gas or active species which are then used for surface treatment of a substrate. When the discharge gas contains oxygen, for example, surface treatment forms a metal oxide film on a metal circuit on a substrate. If, however, the gas contains hydrogen or an organic substance, a metal oxide film, such as a transparent electrode formed on the surface of a liquid crystal panel, is reduced. Alternatively, by causing discharge to take place adjacent to the surface of a liquid, or bubbled through a liquid, a liquid may be used for surface treatment of a substrate without risk of thermal or electrical damage to the substrate.
    Type: Grant
    Filed: March 16, 1998
    Date of Patent: December 28, 1999
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Takuya Miyakawa, Katsuhiro Takahashi, Takeshi Miyashita, Satoru Katagami
  • Patent number: 5918354
    Abstract: A piezoelectric resonator is provided which is formed of an element piece. This element piece further includes a piezoelectric material and an electrode formed on the surface of the piezoelectric material. A plug for mounting the element piece and a case for housing said element piece in an air-tight manner are also provided. The surface of the element piece is coated with a resin film formed from an excited active species of an organic compound generated through a gas discharge in a predetermined discharge gas at approximately atmospheric pressure. A method of manufacturing a piezoelectric resonator is also provided, which comprises the steps of first mounting the element piece on the plug. Next, a gas discharge in a predetermined discharge gas is produced at approximately atmospheric pressure and an excited active species of an organic compound which is a liquid or a gas at room temperature is generated as a result of this gas discharge in a gas discharge region.
    Type: Grant
    Filed: April 2, 1997
    Date of Patent: July 6, 1999
    Assignee: Seiko Epson Corporation
    Inventors: Yasumitsu Ikegami, Takuya Miyakawa
  • Patent number: 5735451
    Abstract: High frequency electrical discharge or nonpolar discharge using microwaves is generated in a gas that is introduced into a gas duct formed by a dielectric material, such as glass or ceramic. Surface treatment is applied to components, which are under atmospheric pressure, by exposing them to the gas flow containing the active species generated by the above mentioned electrical discharge. The components are soldered before, during, or after the application of this surface treatment. The surface of the components is exposed to the active species by either directly exposing the components to the electrical discharge, or by directing the reactive gas flow containing the active species at the component surfaces. By selecting an appropriate gas for generating the active species, it is possible to improve the wettability of the surface of the component to be soldered, or to remove organic substances or oxide film surfaces.
    Type: Grant
    Filed: February 10, 1995
    Date of Patent: April 7, 1998
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Takuya Miyakawa, Yasuhiko Asano, Osamu Kurashina, Satoshi Miyamori, Yohei Kurashima, Makoto Anan