Abstract: There are provided a microparticle measuring device capable of analyzing microparticles with increased accuracy and a microparticle analysis method. According to a microparticle measuring device 1, transmission images of microparticles in the liquid sample are captured by a plurality of image capturing units that are disposed in mutually different orientations with respect to a liquid feed pipe when viewed in a cross section orthogonal to the flowing direction of a liquid sample in the liquid feed pipe, and the microparticles are analyzed by an analyzing unit on the basis of the transmission images.

Abstract: There is provided a method of producing a separation membrane in which a zeolite membrane is formed on an inorganic oxide porous substrate. The substrate has amorphous SiO2 as a main component of a zeolite formation portion of the substrate, the method includes: a first step of forming a zeolite seed crystal and an alkaline component including a structure directing agent on a surface of the substrate; and a second step of treating a formed product obtained in the first step under a heated steam atmosphere, and the zeolite membrane is formed on the surface of the substrate.

Abstract: There is provided a zeolite membrane which is an MFI-type zeolite membrane formed on an inorganic oxide porous substrate, in which, in a diffraction pattern obtained by X-ray diffraction measurement using a CuK? ray as an X-ray source, when an intensity of a diffraction peak appearing at diffraction angles of 7.3° to 8.4° at which a crystal lattice plane belongs to 011 and/or 101 planes is used as a reference, an intensity of a diffraction peak appearing at diffraction angles of 8.4° to 9.0° at which a crystal lattice plane belongs to 200 and/or 020 planes is preferably 0.3 or more.

Abstract: There are provided a microparticle measuring device capable of analyzing microparticles with increased accuracy and a microparticle analysis method. According to a microparticle measuring device 1, transmission images of microparticles in the liquid sample are captured by a plurality of image capturing units that are disposed in mutually different orientations with respect to a liquid feed pipe when viewed in a cross section orthogonal to the flowing direction of a liquid sample in the liquid feed pipe, and the microparticles are analyzed by an analyzing unit on the basis of the transmission images.

Abstract: Provided is a microscope device which includes: (1) a light source that outputs illumination light in a wavelength band including a near-infrared region; (2) an illumination optical system that irradiates an observation target with the illumination light output from the light source; (3) an image formation optical system that includes a spectroscopic unit which is configured to receive and disperse transmitted or scattered light produced at the observation target by irradiating the observation target with the illumination light, and that forms an image on the basis of the dispersed transmitted or scattered light; and (4) an image capturing unit that acquires the image formed by the image formation optical system. An illumination-light-irradiated area of the observation target is larger than an area of the field of view of the image formation optical system, and is less than or equal to ten times the area of the field of view.

Abstract: A quality evaluation method includes an acquisition step of acquiring spectral data related to transmitted light or diffusely reflected light from a cell mass by irradiating the cell mass with measurement light including near-infrared light, and an evaluation step of evaluating quality of the cell mass, based on the spectral data of the cell mass acquired in the acquisition step.

Abstract: A microscope that makes it possible to acquire a hyperspectral image with high data precision includes a light source, an illumination optical system, an image-forming optical system, an imaging unit, a spectroscope, a stage, a drive unit, and a control unit. The illumination optical system converges, at a converging angle ?, illuminating light in a wavelength band included in the near-infrared region output from the light source, and emits the converged illuminating light onto the object being observed. The image-forming optical system forms an image based on transmitted and scattered light generated by the observed object by emission of the illuminating light onto the observed object. The sin ? is set to a value that does not exceed the numerical aperture of an objective lens that receives the transmitted and scattered light from the observed object.

Abstract: From a first image indicating an intensity distribution of radiation from a subject 5 in a first wavelength region and a second image indicating an intensity distribution of radiation from the subject in a second wavelength region, a surgical microscope system 1 obtains image data of a third image indicating a position of a target substance. Output data obtained by superposing the image data of the third image onto form image data further includes information indicating the target substance in addition to the image indicating the surface form of the subject 5. Therefore, the position of the target substance existing on the inside of a tissue can be grasped non-invasively by referring to the output data.

Abstract: A method for producing an ammonium tungstate aqueous solution includes the steps of: adding sulfuric acid to a solution containing tungstate ions; bringing the solution having the sulfuric acid added therein, into contact with an anion exchange resin; and bringing the anion exchange resin into contact with an aqueous solution containing ammonium ions.

Abstract: A semiconductor device includes: a semiconductor substrate including a first semiconductor layer on the semiconductor substrate; multiple semiconductor elements in the semiconductor substrate; and an ineffective region. Each semiconductor element includes: a second semiconductor layer in a surface portion of the first semiconductor layer; a third semiconductor layer disposed in another surface portion of the first semiconductor layer and spaced a part from the second semiconductor layer; and a control layer disposed on a portion of the first semiconductor layer between the second semiconductor layer and the third semiconductor layer. The ineffective region is disposed in the semiconductor substrate between at least two adjacent semiconductor elements; and does not provide a function of the semiconductor elements.

Abstract: There are provided a cemented carbide high in thermal diffusivity and excellent in wear resistance, and a cutting tool including a base material formed of this cemented carbide. The cemented carbide is a WC based cemented carbide in which a hard phase mainly constituted of WC grains is bound by a binder phase mainly constituted of Co, and is used for a cutting tool. The binder phase is substantially constituted of Co, or Co and Ni. A total content of Co and Ni is not less than 4.5 mass % and not more than 15 mass %. In this cemented carbide, the WC grains have an average diameter of not less than 0.4 ?m and not more than 4 ?m.

Abstract: A semiconductor device includes: a semiconductor substrate including a first semiconductor layer on the semiconductor substrate; multiple semiconductor elements in the semiconductor substrate; and an ineffective region. Each semiconductor element includes: a second semiconductor layer in a surface portion of the first semiconductor layer; a third semiconductor layer disposed in another surface portion of the first semiconductor layer and spaced a part from the second semiconductor layer; and a control layer disposed on a portion of the first semiconductor layer between the second semiconductor layer and the third semiconductor layer. The ineffective region is disposed in the semiconductor substrate between at least two adjacent semiconductor elements; and does not provide a function of the semiconductor elements.

Abstract: A method for producing an ammonium tungstate aqueous solution includes the steps of: adding sulfuric acid to a solution containing tungstate ions; bringing the solution having the sulfuric acid added therein, into contact with an anion exchange resin; and bringing the anion exchange resin into contact with an aqueous solution containing ammonium ions.

Abstract: There are provided a cemented carbide high in thermal diffusivity and excellent in wear resistance, and a cutting tool including a base material formed of this cemented carbide. The cemented carbide is a WC based cemented carbide in which a hard phase mainly constituted of WC grains is bound by a binder phase mainly constituted of Co, and is used for a cutting tool. The binder phase is substantially constituted of Co, or Co and Ni. A total content of Co and Ni is not less than 4.5 mass % and not more than 15 mass %. In this cemented carbide, the WC grains have an average diameter of not less than 0.4 ?m and not more than 4 ?m.

Abstract: In the manufacturing process of a Bi-CMOS semiconductor device, which includes a CMOSFET and a bipolar transistor, the steps for forming a well region, source regions, and drain regions of the CMOSFET are also used for forming the bipolar transistor. One of the steps is used for introducing impurities of the same conductivity type in a surface of a base region of the bipolar transistor in order to form a high impurity concentration region in the surface. The high impurity concentration region is formed such that the distance between an emitter region of the bipolar transistor and the high impurity concentration region becomes 1 to 2 ?m. The shift in device characteristics of the bipolar transistor is improved by the high impurity concentration region even if the impurity concentration is relatively low at the surface of the base region of the bipolar transistor.

Abstract: In the manufacturing process of a Bi-CMOS semiconductor device, which includes a CMOSFET and a bipolar transistor, the steps for forming a well region, source regions, and drain regions of the CMOSFET are also used for forming the bipolar transistor. One of the steps is used for introducing impurities of the same conductivity type in a surface of a base region of the bipolar transistor in order to form a high impurity concentration region in the surface. The high impurity concentration region is formed such that the distance between an emitter region of the bipolar transistor and the high impurity concentration region becomes 1 to 2 &mgr;m. The shift in device characteristics of the bipolar transistor is improved by the high impurity concentration region even if the impurity concentration is relatively low at the surface of the base region of the bipolar transistor.

Abstract: A variable displacement compressor has a control valve for controlling the displacement of the compressor. When the pressure in a discharge chamber of the compressor (discharge pressure) is equal to or higher than a first threshold value, a controller sets a duty ratio, which is sent to the control valve, to zero % to limit the discharge pressure. As a result, the compressor displacement is minimized and the discharge pressure is lowered. Therefore, the pipes of an external refrigerant circuit does not receive excessive load based on high discharge pressure. When the displacement of the compressor is minimized, circulation of refrigerant in the refrigerant circuit is stopped and refrigerant containing lubricant circulates within the compressor.

Abstract: In the manufacturing process of a Bi-CMOS semiconductor device, which includes a CMOSFET and a bipolar transistor, the steps for forming a well region, source regions, and drain regions of the CMOSFET are also used for forming the bipolar transistor. One of the steps is used for introducing impurities of the same conductivity type in a surface of a base region of the bipolar transistor in order to form a high impurity concentration region in the surface. The high impurity concentration region is formed such that the distance between an emitter region of the bipolar transistor and the high impurity concentration region becomes 1 to 2 &mgr;m. The shift in device characteristics of the bipolar transistor is improved by the high impurity concentration region even if the impurity concentration is relatively low at the surface of the base region of the bipolar transistor.

Abstract: A variable displacement compressor has a control valve for controlling the displacement of the compressor. When the pressure in a discharge chamber of the compressor (discharge pressure) is equal to or higher than a first threshold value, a controller sets a duty ratio, which is sent to the control valve, to zero % to limit the discharge pressure. As a result, the compressor displacement is minimized and the discharge pressure is lowered. Therefore, the pipes of an external refrigerant circuit does not receive excessive load based on high discharge pressure. When the displacement of the compressor is minimized, circulation of refrigerant in the refrigerant circuit is stopped and refrigerant containing lubricant circulates within the compressor.

Abstract: One or more capacitors are formed using thermally oxidized films formed on a silicon layer of an SOI substrate. The capacitors may be formed alone or together with other semiconductor elements on a single SOI substrate. A diffuse layer having an impurity in a high density is first formed on the silicon layer, and then an oxidized film is formed on the diffused layer by thermal oxidation. Then, contaminants in the oxidized film are driven-out under a high temperature heat treatment, thereby to improve quality of the oxidized film, such as durability against a high voltage. Plural capacitors may be formed using oxidized films having a respectively different thickness, by repeating thermal oxidation and removal of the oxidized film.