Patents by Inventor Takuya Sugawara
Takuya Sugawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200279724Abstract: The present invention discloses a film formation device. The film formation device includes a vacuum chamber, an evacuation mechanism communicating with an interior of the vacuum chamber, a substrate holding means capable of holding a plurality of substrates, and a film formation area located in the interior of the vacuum chamber. The film formation area allows sputter ions to be emitted from a target by sputtering and arrive at the substrates. The film formation device further includes an isolation means located in the vacuum chamber. The isolation means isolates the film formation area from other areas in the vacuum chamber. The isolation means is arranged such that the film formation area communicates with an exterior of the film formation area.Type: ApplicationFiled: April 6, 2018Publication date: September 3, 2020Inventors: Ekishu NAGAE, Takuya SUGAWARA, Takaaki AOYAMA
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Publication number: 20190390321Abstract: Provided is a film-formation method for a surface layer having high mechanical strength and a low refractive index. A step of film formation from a vapor deposition material by a vacuum vapor deposition method and a step of film formation by sputtering of a target constituent substance are repeated for the surfaces of substrates (S), thereby forming films with a lower refractive index than that of a film-forming material.Type: ApplicationFiled: January 30, 2018Publication date: December 26, 2019Inventors: Hiroshi MUROTANI, Yukio HORIGUCHI, Takuya SUGAWARA
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Publication number: 20190284685Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.Type: ApplicationFiled: May 23, 2019Publication date: September 19, 2019Inventors: Mitsuhiro MIYAUCHI, Takanori MURATA, Takuya SUGAWARA, Ichiro SHIONO, Yousong JIANG, Tatsuya HAYASHI, Ekishu NAGAE
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Publication number: 20190249307Abstract: The method for depositing a film of the present invention includes the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. A method for depositing a film enabling production of an oil-repellent substrate includes an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.Type: ApplicationFiled: April 24, 2019Publication date: August 15, 2019Applicant: SHINCRON CO., LTD.Inventors: Ichiro SHIONO, Ekishu NAGAE, Yousong JIANG, Takuya SUGAWARA
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Patent number: 9422620Abstract: A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.Type: GrantFiled: February 16, 2012Date of Patent: August 23, 2016Assignee: SHINCRON CO., LTD.Inventors: Takuya Sugawara, Hikaru Aoshima, Yousong Jiang, Ichiro Shiono
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Publication number: 20160177451Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.Type: ApplicationFiled: February 29, 2016Publication date: June 23, 2016Applicant: SHINCRON CO., LTD.Inventors: Ichiro SHIONO, Ekishu NAGAE, Yousong JIANG, Takuya SUGAWARA
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Patent number: 9365920Abstract: The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.Type: GrantFiled: August 24, 2009Date of Patent: June 14, 2016Assignee: SHINCRON CO., LTD.Inventors: Ichiro Shiono, Ekishu Nagae, Yousong Jiang, Takuya Sugawara
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Patent number: 9315415Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.Type: GrantFiled: August 24, 2009Date of Patent: April 19, 2016Assignee: Shincron Co., Ltd.Inventors: Ichiro Shiono, Ekishu Nagae, Yousong Jiang, Takuya Sugawara
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Patent number: 9157146Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.Type: GrantFiled: August 2, 2011Date of Patent: October 13, 2015Assignee: SHINCRON CO., LTD.Inventors: Takuya Sugawara, Hikaru Aoshima, Yousong Jiang, Ichiro Shiono, Ekishu Nagae
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Publication number: 20150284842Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.Type: ApplicationFiled: October 23, 2012Publication date: October 8, 2015Inventors: Mitsuhiro Miyauchi, Takanori Murata, Takuya Sugawara, Ichiro Shiono, Yousong Jiang, Tatsuya Hayashi, Ekishu Nagae
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Publication number: 20140356601Abstract: A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.Type: ApplicationFiled: February 16, 2012Publication date: December 4, 2014Inventors: Takuya Sugawara, Hikaru Aoshima, Yousong Jiang, Ichiro Shiono
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Publication number: 20140205844Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.Type: ApplicationFiled: August 2, 2011Publication date: July 24, 2014Applicant: SHINCRON CO., LTD.Inventors: Takuya Sugawara, Hikaru Aoshima, Yousong Jiang, Ichiro Shiono
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Patent number: 8735304Abstract: A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.Type: GrantFiled: March 26, 2012Date of Patent: May 27, 2014Assignees: Elpida Memory Inc., Tokyo Electron LimitedInventors: Yuichiro Morozumi, Takuya Sugawara, Koji Akiyama, Shingo Hishiya, Toshiyuki Hirota, Takakazu Kiyomura
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Patent number: 8409961Abstract: An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film.Type: GrantFiled: July 8, 2009Date of Patent: April 2, 2013Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihiro Sato
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Patent number: 8336487Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.Type: GrantFiled: April 27, 2011Date of Patent: December 25, 2012Assignee: Tokyo Electron LimitedInventors: Yoshihiro Ishida, Katsushige Harada, Takuya Sugawara
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Publication number: 20120244721Abstract: A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.Type: ApplicationFiled: March 26, 2012Publication date: September 27, 2012Applicants: TOKYO ELECTRON LIMITED, ELPIDA MEMORY INC.Inventors: Yuichiro MOROZUMI, Takuya SUGAWARA, Koji AKIYAMA, Shingo HISHIYA, Toshiyuki HIROTA, Takakazu KIYOMURA
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Patent number: 8021987Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.Type: GrantFiled: December 7, 2009Date of Patent: September 20, 2011Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Publication number: 20110197813Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.Type: ApplicationFiled: April 27, 2011Publication date: August 18, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Yoshihiro ISHIDA, Katsushige HARADA, Takuya SUGAWARA
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Publication number: 20110168544Abstract: [Object]To provide a manufacturing method of an optical filter having favorable film quality by removing a foreign substance adhered onto a surface of a substrate by cleaning before a thin film is formed. [Solution] By performing a cleaning step P1 for cleaning a substrate S by means of a solution including water, a pre-treatment step P3 for plasma-treating a surface of the substrate S cleaned in the cleaning step P1 by plasma of an oxygen gas, and a thin film formation step (P4, P5) for forming the thin film on the surface of the substrate S plasma-treated in the pre-treatment step P3, the foreign substance adhered onto the surface of the substrate can be effectively removed. In the pre-treatment step P3, only the oxygen gas is introduced to an area where the plasma is generated, and a flow rate of the oxygen gas to be introduced is greater than a flow rate of the oxygen gas introduced in the thin film formation step.Type: ApplicationFiled: September 14, 2009Publication date: July 14, 2011Applicant: Shincron Co., LTDInventors: Ichiro Shiono, Toshihiko Sato, Yasuhisa Togashi, Yousong Jiang, Takuya Sugawara
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Patent number: 7968472Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.Type: GrantFiled: August 6, 2009Date of Patent: June 28, 2011Assignee: Tokyo Electron LimitedInventors: Yoshihiro Ishida, Katsushige Harada, Takuya Sugawara