Abstract: A small-sized camera module in which an adhesive does not flow in side electrodes is provided. In the camera module according to the embodiment of the invention, the adhesive does not flow in concave portions thanks to a protection wall for covering top portions of the concave portions formed on a substrate. Accordingly, the side electrodes formed in the concave portions can be securely electrically connected to a contact or a drawing substrate. A lower portion of a holder can be disposed adjacent to the concave portions. Thus, the size of the substrate can be formed as small as possible, so it is possible to obtain the small-sized camera module.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: The present invention provides uses of a polypeptide having a ligand activity to a sensory epithelium neuropeptide-like receptor (SENR) which is a G protein-coupled receptor protein, and a DNA encoding the same. More specifically, the present invention provides an anti-attention-deficit-disorder or anti-narcolepsy agent, which comprises a polypeptide having a ligand activity for SENR or a salt thereof, as well as a method for screening compounds having an anti-attention-deficit-disorder or anti-narcolepsy activity or compounds having an anti-anxiety, anti-depression, anti-insomnia, anti-schizophrenia or anti-fear activity or salts thereof, which comprises using the above polypeptide or a precursor protein of the polypeptide or a salt thereof.

Abstract: The polypeptides in the present invention possess the effects of promoting and inhibiting the secretion of prolactin, and are thus useful as drugs for the prevention and treatment of various diseases, in terms of prolactin secretion stimulants, which are associated with the secretion of prolactin, such as hypoovarianism, spermatic underdevelopment, menopausal symptoms, hypothyroidism, etc. The polypeptides are useful as drugs for the prevention and treatment of various diseases, in terms of prolactin secretion inhibitors, which are associated with the secretion of prolactin, such as pituitary tumor, diencephalon tumor, menstrual disorder, autoimmune diseases, prolactinoma, sterility, impotence, amenorrhea, lactorrhea, acromegaly, Chiari-Frommel syndrome, Argonz-del Castilo syndrome, Forbes-Albright syndrome, lymphoma, Sheehan's syndrome, spermatogenesis disorder, etc.

Abstract: On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.

Abstract: On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.

Abstract: The present invention provides a ligand to GPR8, in particular polypeptides capable of binding to GPR8 or its amides or esters, or salts thereof, as well as DNA, encoding for such polypeptides. The ligand to GPR8 of the present invention is useful in developing a receptor-binding assay system with the use of a GPR8 expression system, for screening candidate compounds for drugs such as preventive/therapeutic agents for obesity, appetite stimulants, and prolactin production inhibitors.

Abstract: The polypeptides in the present invention possess the effects of promoting and inhibiting the secretion of prolactin, and are thus useful as drugs for the prevention and treatment of various diseases, in terms of prolactin secretion stimulants, which are associated with the secretion of prolactin, such as hypoovarianism, spermatic underdevelopment, menopausal symptoms, hypothyroidism, etc. The polypeptides are useful as drugs for the prevention and treatment of various diseases, in terms of prolactin secretion inhibitors, which are associated with the secretion of prolactin, such as pituitary tumor, diencephalon tumor, menstrual disorder, autoimmune diseases, prolactinoma, sterility, impotence, amenorrhea, lactorrhea, acromegaly, Chiari-Frommel syndrome, Argonz-del Castilo syndrome, Forbes-Albright syndrome, lymphoma, Sheehan's syndrome, spermatogenesis disorder, etc.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: Provided is a preventive, ameliorant or remedy for hypertension excellent in both blood pressure lowering action and blood pressure-rise suppressing action and having high safety. This preventive, ameliorant or remedy for hypertension comprises a coffee bean extract.

Abstract: The present invention intends to provide a novel peptide and use thereof. More particularly, the present invention provides a novel peptide and a DNA encoding the same, a drug comprising the peptide or DNA, a screening method/screening kit for a compound or its salt that promotes or inhibits the activity of the peptide, a compound or its salt obtained by the screening, a drug comprising the compound or its salt, etc. The peptide of the invention and the DNA encoding the same are usable, e.g., for the diagnosis, treatment, prevention, etc. of digestive diseases, etc. Moreover, the peptide of the invention is useful as a reagent for screening a compound or its salt that promotes or inhibits the activity of the protein of the invention.

Abstract: The present invention intends to provide a novel peptide and use thereof. More particularly, the present invention provides a novel peptide and a DNA encoding the same, a drug comprising the peptide or DNA, a screening method/screening kit for a compound or its salt that promotes or inhibits the activity of the peptide, a compound or its salt obtained by the screening, a drug comprising the compound or its salt, etc. The peptide of the invention and the DNA encoding the same are usable, e.g., for the diagnosis, treatment, prevention, etc. of digestive diseases, etc. Moreover, the peptide of the invention is useful as a reagent for screening a compound or its salt that promotes or inhibits the activity of the protein of the invention.

Abstract: A blood fluidity-improving agent, a blood circulation promoter or a cerebrovascular disease-improving agent, containing as an active ingredient thereof one or more ingredients selected from the group consisting of chlorogenic acids, caffeic acids, ferulic acids and pharmaceutically acceptable salts of these acids. The present blood fluidity-improving agent, blood circulation promoter or cerebrovascular disease-improving agent is highly safe and can be orally taken over longer periods of time.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: An active matrix substrate has: scanning lines extending in row direction and image data lines extending in column direction, formed in display area; semiconductor islands at each cross point and in peripheral circuit area; a first gate insulating film formed on each pixel semiconductor island; a first gate made of a first wiring layer and formed on said first gate insulating film; a second gate insulating film thinner than the first gate insulating film formed on peripheral circuit semiconductor island; and a second gate electrode made of a second wiring layer and formed on the second gate insulating film, wherein the pixel transistor semiconductor island, first gate insulating film and first gate electrode constitute a pixel transistor, and the scanning line includes a lower layer made of the second wiring line and an upper layer made of the first wiring line connected to the lower layer.

Abstract: A wiring structure, a substrate for a display device provided therewith and a display device. The display device features a high brightness and a good display quality. The display device comprises a plurality of pixel regions arranged on a glass substrate; a TFT arranged for each of the pixel regions; an organic EL element including an anode formed by using an ITO for each of the pixel regions, and electrically connected to the source electrode of the TFT, an organic EL layer formed on the anode, and a cathode formed on the organic EL layer to transmit light from the organic EL layer; and a reflection plate for reflecting light from the organic EL layer.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: A drive apparatus for a plasma display panel useing a charge recovery circuit 12 that re-uses a recovered electrical charge, the drive apparatus comprising: a brightness detection means 16, 17 for detecting a brightness so as to obtain screen brightness information; and a charge recovery timing control means 4 for controlling a charge recovery period T from a time at which a charge recovery operation of the charge recovery circuit 12 starts to a time of fixing to a sustaining potential or a ground potential, wherein the charge recovery timing control means 4 controls the charge recovery period of the charge recovery circuit 4 in response to the brightness information obtained by the brightness detection means 16, 17.